A Measurement of the Residual Stress and Young's Modulus of p+ Silicon

p+ 실리콘의 강성계수 및 잔류응력 측정

In this paper, the residual stress and young's modulus of the p+ thin film have been estimated by using the electrostatic resonators. The electrostatic plate resonator with four corrugated bridges and another with four flat ones have been fabricated. The deflection of the plate has been calculated under the induced tension and the residual stress and compared with the dynamic test results. When the young's modulus of the p+ silicon is 125 GPa. The estimated residual stresses of the flat and the corrugated bridges are about 15 MPa and less than 5 MPa, respectively. It has been confirmed that the corrugated structure releases the residual tensile stress resulted from the heavy boron diffusion process.