• Title/Summary/Keyword: thin film media

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Crystallization Properites of $Te_x(Sb_{85}Ge_{15})_{100-x}$ Thin Film as Phase Change Optical Recording Media ($Te_x(Sb_{85}Ge_{15})_{100-x}$ 상변화 광기록 박막의 결정화 특성)

  • 김홍석;이현용;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.314-320
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    • 1998
  • In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.

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Effects of Mo and Si on the Coercivity of CoCrTa/CrMo and CoCrTa/CrSi Thin Film Media (CoCrTa/CrX (X=Mo, Si) 자성박막의 보자력에 미치는 Mo와 Si의 영향)

  • 조준식;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.9 no.4
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    • pp.203-209
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    • 1999
  • Effects of Mo and Si addition in Cr underlayer on magnetic properties of CoCrTa/CrMo and CoCrTa/Si thin films media were investigated. Thin films were prepared with DC magnetron sputtering system. The thickness of CoCrTa magnetic layer and Cr underlayer were fixed at 300 $\AA$ and 700 $\AA$, respectively. The substrate heating temperature was kept constant at 26$0^{\circ}C$ for both magnetic layer and underlayer preparation. The coercivity increase of CoCrTa film was realized due to Mo addition in Cr underlayer. Si addition made a small decrease in coercivity. Coercivity increase seems to be attributed by the improvement of preferred orientation of Cr(200) plane. It is found that lattice fit between Cr(200) and CoCrTa(1120) of CrMo underlayer is better than that of CrSi underlayer. This small misfit may also contribute coercivity increase.

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Phase Controlled Thin Film Loop Antenna for Multi-media Devices (멀티미디어단말기용 박막형 위상제어루프 안테나)

  • Shin, Cheon-Woo
    • Journal of Korea Multimedia Society
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    • v.12 no.7
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    • pp.971-978
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    • 2009
  • The paper is a phase controlled loop antenna for multi-media devices. We developed a phase control loop pattern arrangement methods for loop antenna in mobile devices like as a cell phone and PCS, WCDMA. In the loop antenna pattern, arrange close adhesive the loop antenna pattern $180^\circ$ cycle in wave length, the radiated electro-magnetic wave from close adhesive loop pattern become to coherent wave than the phase controlled loop antenna has high efficiency and high radiation gain. To acquire a wide band width on phase controlled loop antenna, we arrange a multiple phase controlled loop pattern that has a different length each other. Different length for each other loop pattern cause a different frequency that we can acquire a wide band width for loop antenna from close adhesive phase control. In experiment, we designed a CDMA850 mobile multi-media antenna in 20mm$\times$20mm area thickness 0.4mm, the radiation efficiency is over 60% and radiation gain is over 0dBi.

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A Study on Slipping Phenomenon in a Media Transport System (급지 장치에서의 미끄러짐 현상에 대한 연구)

  • 유재관;이순걸;임성수;김시은
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.681-685
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    • 2004
  • A media-feeding (or media-transport) system is a key component in daily consumer systems such as printers, copiers and ATM's. The role of the media-transport system is to feed a medium, which is usually in the form of a thin film, to the main process in a uniform and repeatable manner. Even small slippage between the media and the feeding rollers could significantly degrade the performance of the entire system. The slippage between the medium and the feeding rollers is determined by many parameters which include the friction coefficient between the feeding rollers and the medium material, the angular velocity of the feeding rollers, and the normal force applied by feeding rollers on the medium. This paper investigates the effect of the normal force and the angular velocity of feeding rollers on the slippage of the medium. Authors have constructed a test bed for experiments, which consists of a feeding module and various measuring devices. Using regular paper as media being fed, the authors experimentally measured the slippage of the medium under various normal forces and angular velocities of driving feeding roller. Also the authors developed a novel two-dimensional simulation model for the media-transport system. The paper medium is modeled as a set of multiple rigid bodies interconnected by revolute joints and rotational springs and dampers. Simulations were executed using a multi-body dynamic analysis tool called RecurDy $n^{ⓡ}$. The slippage obtained by the simulation is compared to experimental results.ults.

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A Study on the Stability $Te_{100-x}Ge_x$ Thin Films for Optical Recording (광기록을 위한 Te-Ge 박막의 안정도에 관한 연구)

  • Chung, Hong-Bay;Lee, Young-Jong;Im, Sook
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.229-231
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    • 1996
  • We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

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Preparation and Characterization of a Sn-Anode Fabricated by Organic-Electroplating for Rechargeable Thin-Film Batteries (유기용매 전해조를 이용한 리튬이차박막전지용 Sn 음극의 제조)

  • Kim, Dong-Hun;Doh, Chil-Hoon;Lee, Jeong-Hoon;Lee, Duck-Jun;Ha, Kyeong-Hwa;Jin, Bong-Soo;Kim, Hyun-Soo;Moon, Seong-In;Hwang, Young-Ki
    • Journal of the Korean Electrochemical Society
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    • v.11 no.4
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    • pp.284-288
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    • 2008
  • Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.

Measurement of Tensile Properties for Thin Aluminium Film by Using White Light Interferometer (백색광간섭계를 이용한 알루미늄 박막의 인장 물성 측정)

  • Kim, Sang-Kyo;Oh, Chung-Seog;Lee, Hak-Joo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.30 no.5
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    • pp.471-478
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    • 2010
  • Thin films play an important role in many technological applications including microelectronic devices, magnetic storage media, MEMS and surface coatings. It is well known that a thin film's material properties can be very different from the corresponding bulk properties and thus there has been a strong need for the development of a reliable test method to measure the mechanical properties of a thin film. We have developed an alternative and convenient test method to overcome the limitations of previous membrane deflection experiment and uniaxial tensile test by adopting a white light interferometer having sub-nanometer out-of-plane displacement resolution. The freestanding aluminium specimens are tested to verity the effectiveness of the test method developed and get the tensile properties. The specimens are 0.5 rum wide, $1{\mu}m$ thick and fabricated through MEMS processes including sputtering. 1 to 5 specimens are fabricated on Si dies. The membrane deflection experiments are carried out by using a homemade tester consisted of a motor-driven loading tip, a load cell, and 6 DOF alignment stages. The test system is compact enough to set it up beneath a commercial white light interferometric microscope. The white light fringes are utilized to align a specimen with the tester. The Young's modulus and yield point stress of the aluminium film are 62 GPa and 247 MPa, respectively.

Effect of Crystallographic Orientation of CrNi Underlayer on Magnetic Properties of CoCrTa / CrNi Magnetic Recording Media Deposited by E-Beam Evaporator (E-Beam Evaporator로 제조된 CoCrTa/ Cr-Ni 자기기록 매체의 자기적 특성에 미치는 Cr-Ni 하지층의 결정배향효과)

  • 고흥재;남인탁
    • Journal of the Korean Magnetics Society
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    • v.7 no.4
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    • pp.205-211
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    • 1997
  • The magnetic properties change which was induced by addition of small amount of Ni into Cr underlayer in CoCrTa/ CrNi thin film deposited by electron beam evaporator was investigated. The additional Ni element was found to be beneficial for incease in the coercivity of the thin film deposited at the room temperature. The origin of coercivity increase was elucidated by crystal orientation and microstructure investigation using XRD and AFM respectively. It was found that the grain size were increased by Ni addition. The coercivity of the film with CrNi underlayer is lower than that of film with Cr underlayer when prepared with higher substrate temperature. This result may be originated with the increase in grain size. When film was deposited at 280 $^{\circ}C$ substrate temperature, Cr segregation in grain boundary is found to be the other factor for determining coercivity value.

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Optimization of Gradient-index Antireflection Coatings

  • Kim, J. H.;Lee, Y. J.
    • Journal of the Optical Society of Korea
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    • v.4 no.2
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    • pp.86-88
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    • 2000
  • A sequence of functions are examined for the gradient-index AR thin film between two dielectric media and are used as the starting profiles in optimization to improve AR performance. Sinusoidal functions were quite efficient to use as components of the index change in the optimization. It is shown that there exist a number of gradient-index profiles which exhibit excellent AR-performance after control of the gradient-index profiles.

Magnetization reversal process of the nanosized elliptical permalloy magnetic dots with various aspect ratios

  • Lee, J. H.;K. H. Oh;Kim, K. Y.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.186-187
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    • 2002
  • Recently, there has been much interest in magnetic thin film patterned in submicron scale because of possible ultrahigh density storage media or logical device applications [1-3]. Various geometries such as rectangle, circle, ring and ellipse type dots have been studied to find the shape showing stable switching behavior from repeated cycles. However, rectangle and circle types may not be suitable for device applications because they have two uncontrollable different magnetization reversal modes: C state and S state, resulting in different coercivity and irreproducible switching[4]. (omitted)

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