• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1621-1623
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• 2004

The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.99.1-99.1
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• 2010

Many efforts on the surface sulfurization of $Cu(InGa)Se_2$ (CIGS)thin films have been reported as techniques to improve CIGS solar cell performance. We have investigated the sulfurization technique using the sulfur vapor. The co-evaporated $Cu(In,Ga)Se_2$ tin film was used for sulfurization. A thin $Cu(In,Ga)(S,Se)_2$ layer was grown on the surface of the CIGS thin film after high-temperature annealing in sulfur vapor. The structural and compositional properties of the thin films were studied by XRD, EDS and AES analysis. The obtained results revealed that the surface modification technique is promising method to S incorporated into CIGS absorber.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.448-453
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• 2012

Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2000.04b
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• pp.51-58
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• 2000

Lateral buckling behavior of laminated composite thin-walled I-section beams subjected to bending moment is investigated by applying the nonlinear anisotropic thin-walled beam theory. The constituent laminated thin-walled elements of I-section are assumed to be symmetrically laminated. The bending, twisting, and warping stiffnesses of the cross section are obtained based on the definitions of these stiffnesses In the thin-walled anisotropic beam theory In numerical examples, singly-symmetric I-beams with specially orthotropic, quasi-isotropic, angle-plys and various boundary conditions are considered. To validate the proposed theoretical approach, present analytical solutions are compared with three dimensional finite element solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.78-81
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• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• Journal of Advanced Marine Engineering and Technology
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• v.17 no.3
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• pp.80-87
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• 1993

The various configuration of thin-shaped bevel gears are used usually for such as main reduction gear of the hovercraft. But the reasonable and concise guide to thedesign of the se bevel gears is not yet obtained, since the tooth of bevel gear has complex form. The purpose of these investigation is to be establish the design guide and to propose the desirable configuration form for thin-shaped straight bevel gear. In this report, the desirable configuration is examined experimentally by clearing up the effect of web and rim thickness, rim support condition upon the load distribution and root stress distribution along the tooth trace. The results are summarized as follows. (1) The crowning of tooth trace exerts a significant effect on the root stress distribution of thin-shaped bevel gear. (2) As the desirable configuration of the thin-shaped bevel gear, it is to be recommended that the rim is supported at the heel side of tooth trace. (3) But, as special type, it is desirable that the rim is supported at the toe side.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.1
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• pp.162-167
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• 2013

The most important factor in an aircraft manufacturing is stability and weight reduction. Most of aircraft components are designed with thin plate type to satisfy weight reduction needs. The thin plate is difficult to be machined because it is apt to be vibrated by dynamic force generated in milling process. The most critical factor in machining of aluminum thin plate is width and thickness between stiffeners. So we tested many cases to find out the machinable minimum thickness at different width between stiffeners. And with the data obtained from many tests, this papers suggested the standard width thickness relation that is machinable without vacuum fixture. Machinist will be able to reduce the cost of aircraft thin plate parts by reducing the number of vacuum fixture used by the help of this standard.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.9 s.174
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• pp.188-193
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• 2005

To provide the various machining materials with excellent quality and dimensional accuracy, high -speed machining is very useful tool as one of the most effective rapid manufacturing processes. However, high-speed machining is not suitable for microscale thin-walled structures because of the lack of the structure stiffness to resist the cutting force. A new method which is able to make a very thin-walled structure rapidly will be proposed in this paper. This method is composed two processes, high-speed machining and filling process. Strong workholding force comes out of the solidification of filling materials. Low-melting point metal alloys are used in order to minimize the thermal effect during phase change and to hold arbitrary shape thin-walled structures quickly during high-speed machining. To verify the usefulness of this method, we will show some applications, for examples thin -wall cylinders and hemispherical shells, and compare the experimental results to analyze the dimensional accuracy of typical parts of the structures.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.170-174
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• 2005

A numerical system to extract effective elastic properties of polycrystalline thin-films for MEMS devices is developed. In this system, the statistical model based on lattice system is used for modeling the microstructure evolution simulation and the key kinetics parameters of given micrograph, grain distributions and deposition process can be extracted by inverse method proposed in the system. In this work, effects of kinetics parameters on the extraction of effective elastic properties of polycrystalline thin-films are studied by using statistical method. Effects of the fraction of the potential site($f_p$) among the parameters for deposition process of microstructure on the extraction of effective elastic properties of polycrystalline thin-films are investigated. For this research, polysilicon is applied to this system as the polycrystalline thin-films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.22.1-22.1
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• 2011

In this study, off-axis RF magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The structural, optical and electrical properties of the obtained films depending on deposition parameters, such as sputtering power, gas flow and working pressure, have been investigated. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 100-nm thick ITO films showed a resistivity of about $4.2{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 81% at a wavelength of 550nm. The transmittance of the ITO thin films by an insertion of $SiO_2$ thin films on ITO films was improved.