Properties of the surface of the CIGS thin films after sulfurization

황화 열처리를 통한 CIGS 광흡수층의 표면 특성 변화 연구

Many efforts on the surface sulfurization of $Cu(InGa)Se_2$ (CIGS)thin films have been reported as techniques to improve CIGS solar cell performance. We have investigated the sulfurization technique using the sulfur vapor. The co-evaporated $Cu(In,Ga)Se_2$ tin film was used for sulfurization. A thin $Cu(In,Ga)(S,Se)_2$ layer was grown on the surface of the CIGS thin film after high-temperature annealing in sulfur vapor. The structural and compositional properties of the thin films were studied by XRD, EDS and AES analysis. The obtained results revealed that the surface modification technique is promising method to S incorporated into CIGS absorber.