• Journal of Advanced Marine Engineering and Technology
• /
• v.22 no.4
• /
• pp.560-568
• /
• 1998

Recently to develop an automobile with better properities many researches and investments have been executed. In this paper we intend to improve the automobile properties by reducing the weight of the engine without changing the dynamic characteristics. At first the vibration analysis by the Substructure Synthesis Mehtod and the exciting test of the engine model performed to confirm the reliability of the analyzing tools. And the weight minimiza-tion is performed by the Sensitivity Analysis and the Optimum Structural Modificationl. To decrease the engine weight ideally the weight of the parts with the low sensitivity is to cut mainly and the changing quantity of the natural frequency by the cut is to be recovered by the weight modification of the parts with the high sensitivity. As actually the mathematical unique solution for the homogeneous problem(i. e. 0 object func-tion problem)does not exist we redesign the engine block with much thinner initial thickness and recover the natural frequencies and natural modes of original structure by the sensitivity analy-sis and then observe the Frequency Response Function(FRF) for the interesting points. In this analysis the original thickness of the engine model is 8mm and the redesigned initial thicknesses are 5mm and 6mm, And the number of the interesting natural frequencies are 1, 2, 3, 4 and 5 respectively.

• Journal of Sensor Science and Technology
• /
• v.22 no.3
• /
• pp.233-237
• /
• 2013

We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.27-30
• /
• 2002

Photoconductor for direct detection flat-panel imager present a great materials challenge, since their requirements include high X -ray absorption, ionization and charge collection, low leakage current and large area deposition. Selenium is practical material. But it needs high thickness and high voltage in selenium for high ionization rate. We report comparative studies of detector sensitivity. One is an a-Se with $70{\mu}m$ thickness on glass. The other has hybrid layer of depositting ZnS phosphor with $100{\mu}m$ on a-Se. The leakage current of hybrid is similar to it of a-Se, but photocurrent is lager than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• Journal of the Korean Ceramic Society
• /
• v.25 no.4
• /
• pp.341-348
• /
• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2002.11b
• /
• pp.128-133
• /
• 2002

The main obstacle to high track density in HDD is the structural resonances of the suspension. The most critical mode is sway mode and second torsion mode, when a data is read and written. It is common fact that the effect of two modes is smaller when a thickness is bulky. But the stiffness of suspension is smaller, the slider can follow a disk better. Because these two fact are reciprocal, a compromise is needed. So we investigated another method to improve band width without changing of the thickness of suspension but with changing of the shape. In this paper, we use two method - Sensitivity analysis and SIP using ADS. And we obtained the optimized value close to target value.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1531-1534
• /
• 2009

Effect of process factors on the sensitivity of inner-type digital switching TSP was analyzed. From these results, we have successfully fabricated inner-type digital switching TSP embedded in 3.2-inch WQVGA PLS mode LCD panel. During many factors, TFT sensor structure for reducing the PI thickness and a separation distance of $0.3{\mu}m$ between the conductive column spacer (C/S) and TFT sensor were essential. Glass thickness and main C/S density were also important factors. This technology can be applied to wide angle of view hand-held phones, personal digital assistants (PDAs), and tablet PCs.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.5 no.3
• /
• pp.182-190
• /
• 1997

Recently to develope an automobile with better properties, much researches and investments are executed in many countries. In this paper, it is intended to minimize the weight of an engine block without changing the dynamic characteristics. The weight minimization is executed by the sensitivity of the natural frequency of the engine block. To decrease the engine weight, much less thickness than the original thickness of the engine is selected to initial value and the structure modification is performed to recover the dynamic characteristics of the engine. Here, the original thickness of the engine is 8mm and the initial thickness is selected to 5mm, 6mm and the number if the natural frequencies fitted are 2, 6, 7, respectively. As the results, it is found that; (1) the weight of each case could be reduced without changing the objective natural frequencies. Specially, in the case of fitting 2 natural frequencies with 5mm initial thickness the weight could be reduced to 4.21kg(23.3% for engine weight). (2) according to the driving frequency range of engine, the weight minimization could be performed choicely, (3) improving a vibration characteristics of a orignal structure, the weight minimization could be performed.

• Asian Pacific Journal of Cancer Prevention
• /
• v.15 no.13
• /
• pp.5355-5358
• /
• 2014

Background: To assess the role of sonographic endometrial thickness and hysteroscopic polyp size in predicting premalignant and malignant polyps in postmenopausal women. Materials and Methods: A total of 328 postmenopausal women with abnormal uterine bleeding and thickened endometrium underwent operative hysteroscopy due to detection of endometrial polyps were included in this retrospective study. Preoperative endometrial thickness measured by transvaginal ultrasonography and polyp size on hysteroscopy were noted. Hysteroscopic resection with histology was performed for endometrial polyps. Endometrial thickness and polyp size were evaluated on the basis of final diagnosis established by histologic examination. Receiver operator characteristic curves were calculated to assess the sensitivity, specificity, positive predictive value, negative predictive value and diagnostic accuracy of endometrial thickness and polyp size for detecting pemalignant and malignant polyps. Results: Premalignant and malignant polyps were identified in 26 (7.9%) of cases. Sonographic measurement showed a greater endometrial thickness in cases of premalignant and malignant polyps when compared to benign polyps. On surgical hysteroscopy, premalignant and malignant polyps were also larger. Endometrial thickness demonstrated a sensitivity of 53.8%, specificity of 85.8%, PPV of 24.6% and NPV of 95.6% at a cut-off limit of 11.5 mm with diagnostic accuracy of 83.2%. Polyp size has a diagnostic accuracy of 94.8% with a sensitivity of 92.3%, specificity of 95.0%, PPV of 61.5% and NPV of 99.3% at a cut-off point of 19.5mm. Conclusions: Endometrial thickness measured by transvaginal ultrasonography is not sufficient in predicting premalignant and malignant endometrial polyps in postmenopausal women with abnormal uterine bleeding and thickened endometrium. Polyp size on hysteroscopy is a more accurate parameter, because of better sensitivity and specificity. However, while polyp size ${\geq}19.5mm$ seems to have a great accuracy for predicting premalignancy and malignancy, histologic evaluation is still necessary to exclude premalignant and malignant polyps.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.5
• /
• pp.500-510
• /
• 2013

In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

• Current Optics and Photonics
• /
• v.7 no.2
• /
• pp.200-206
• /
• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.