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http://dx.doi.org/10.5369/JSST.2013.22.3.233

Thickness Dependence of Solution Deposited HfOx Sensing Membrane for Electrolyte-Insulator-Semiconductor (EIS) Structures  

Lee, In-Kyu (Department of Elcetronic Materials Engineering, Kwangwoon University)
Cho, Won-Ju (Department of Elcetronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of Sensor Science and Technology / v.22, no.3, 2013 , pp. 233-237 More about this Journal
Abstract
We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.
Keywords
pH sensor; EIS; $hfO_x$; High-k sensing membrane; Biosensor;
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