• Polymer(Korea)
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• v.34 no.5
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• pp.424-429
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• 2010

The hybrid composites of aliphatic polyester-silica were prepared via a sol-gel reaction and their potential application using as a buffer coating layer in the thermoelectric device were investigated. When aliphatic polyesters were thermally treated at a high temperature of $240^{\circ}C$, the polymer showed an increases in thermal degradation temperature by $30{\sim}90^{\circ}C$ according to the thermal treatment time. The polyester-silica composites showed an increases in thermal degradation temperature by $30{\sim}50^{\circ}C$ according to the content of the added silica. Polyester-silica composite showed neither discoloration nor change in optical properties because Knoevenagel condensation reaction was hindered by silica structure. The thermal conductivity of the composites increased linearly according to the content of added silica.

• Clean Technology
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• v.19 no.3
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• pp.272-278
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• 2013

Ethylene propylene diene terpolymer (EPDM) has been usually used for various applications. Bottom ash generated in thermoelectric power plant is hardly recycled. In this study, EPDM/bottom ash/talc composites were prepared by using roll-mill. Bottom ashes obtained from thermoelectric power plant were modified using surfactant. The processing materials used in this study were antioxidant, processing oil, cross-linking co-agent and softening agent. Morphology and physical properties of EPDM composites are investigated by using SEM, TGA, UTM and Rheometer. As a result, when modified ash and talc are added to EPDM composites, the tensile strength and modulus of EPDM composites were remarkably enhanced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.231-231
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• 2010

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

• Journal of Powder Materials
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• v.18 no.5
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.55-61
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• 2011

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powers were fabricated by mechanical alloying, mixed with tungsten(W) powders, and hot-pressed at $550^{\circ}C$ for 30 minutes. Thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ were characterized as a function of the volume percent of tungsten-powder addition. The power factor of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ was $21.9{\times}10^{-4}$ $W/m-K^2$, and was improved to $30.5{\times}10^{-4}$ $W/m-K^2$ by dispersion of 1 vol% W powders. While the dimensionless figure-of-merit of the $Bi_2(Te_{0.9}Se_{0.1})_3$ hot-pressed without dispersion of W powders was measured as 0.52 at room temperature, it became substantially enhanced to 0.95 with addition of 1 vol% W powders.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.40-49
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• 1997

$Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ thermoelectric matcrials havc 11et:n fahricxted hy mechanical alloying and hot pressing methods. Microstructure and thermoelectric properties of the hot 11resseii $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ have been investigated Lvith variations of hot pressing temperature and dopmt atltiition Formation of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ alloy powders was completed by mechanical alloying of the as-mixed Ri. Te, arid Sc grmules of ~3.6mm size for 3 hours at ball-to-material weight ratio of 5 : 1. Figure of merit of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ was markedly incrcwieti hy hot pressing at temperatures above $450^{\circ}C$, and value of $1.9{\times}10^{-3}/K$ was obtained for the specimen hot pressed at $550^{\circ}C$. With addition of 0.015 wt% Ri as acceptor dopant, figure of merit ol $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ hot pressed $550^{\circ}C$$2.1{\times}10^{-3}/K$.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.991-997
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• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.858-863
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• 2004

The thermoelectric power, dc conductivity and magnetic properties of the cubic L $a_{2}$ 3/Ti $O_{2.84}$ were investigated. The thermoelectric power was negative below 350 K. The measured thermoelectric power of L $a_{2}$ 3/Ti $O_{2.84}$ increased linearly with temperature, in agreement with model proposed by Emin and Wood, and was represented by A+BT. Temperature dependence indicates that the charge carrier in this material is a small polaron. L $a_{2}$ 3/Ti $O_{2.84}$ exhibited a cross over from variable range hopping to small polaron hopping conduction at a characteristic temperature well below room temperature. The low temperature do conduction mechanism in L $a_{2}$ 3/Ti $O_{2.84}$ was analyzed using Mott's approach. Mott parameter analysis gave values for the density of state at Fermi level [N( $E_{F}$)] = 3.18${\times}$10$^{20}$ c $m^{-3}$ e $V^{-1}$ . The disorder energy ( $W_{d}$) was found to be 0.93 eV, However, it was noted that the value of the disorder energy was much higher than the high temperature activation energy. The exist linear relation between log($\sigma$T)와 1/T in the range of 200 to 300 K, the activation energy for small polaron hopping was 0.15 eV.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.453-459
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• 2001

It is important for the fabrication of nuclear cladding to optimize the microstructure, because the properties of Zr-based nuclear claddings such as mechanical properties, oxidation-resistance and corrosion- resistance vary widely with its microstructure. The microstructure in Zr-based alloy is strongly dependent on the solubility of alloying element. However, it is very difficult to measure the solubility due to the low solution limit of alloying elements in Zr-based alloy. In this study, Thermoelectric Power(TEP) measurements are used to determine the solubility of Nb in Zr-0.8Sn alloy, which is confirmed by optical microscopy and transmission electron microscopy. The solutioning of Nb obtained by a homogenization treatment and water-quench leads to a decrease of TEP The saturation of TEP appears with the increase of homogenization temperature, which means the saturation of the Nb content in the matrix. From these results, the solubility ($C_{Nb}$) of Nb in Zr-0.8Sn with temperature could be expressed as fellow equation : $4.69097{\times}10^{16}{\times}e^{-25300\times\;I/T}$(ppm.at.%)

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.543-549
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• 2003

In order to investigate the thermoelectric properties of $Zn_{k}$ $In_2$$O_{ 3＋k}$ homologous compounds, the samples of $Zn_{k}$ /$In_2$$O_{3＋k}$ / (k = integer between 1 and 9) were prepared by calcining the mixed powders of ZnO and $In_2$$O_3$fellowed by sintering at 1823 K for 2 hours in air, and their electrical conductivities and Seebeck coefficients were measured as a function of temperature in the range of 500 K to 1150 K. X-ray diffraction analysis of the sintered samples clarified that single-phase specimens were obtained for $Zn_{k} /$In_2$$O_{3＋k}$ with k = 3, 4, 5, 7, 8, 9. Electrical conductivity of the $Zn_{k}$ $In_2$$O_{3＋k}$ / decreased with increasing temperature, and decreased with increasing k for k $\geq$ 3. The Seebeck coefficient was negative at all the temperatures for all compositions, confirming that $Zn_{k}$ $In_2$$O_{3＋k}$ / is an n-type semiconductor. Absolute values of the Seebeck coefficient increased linearly with increasing temperature and increased with increasing k for k $\geq$ 3. The temperature dependence of the Seebeck coefficient indicated that Z $n_{k}$I $n_2$ $O_{3＋k}$ could be treated as an extrinsic degenerate semiconductor. Figure-of-merits of Z $n_{k}$I $n_2$ $O_{3＋k}$ were evaluated from the measured electrical conductivity and Seebeck coefficient, and the reported thermal conductivity. Z $n_{7}$ I $n_2$ $O_{10}$ has the largest figure-of-merit over all the temperatures, and its highest value was $1.5{\times}$10$^{-4}$ $K^{-1}$ at 1145 K.5 K.