• 제목/요약/키워드: thermal-degradation

검색결과 1,119건 처리시간 0.033초

Phaffia rhodozyma 세포파쇄액으로부터 항산화제 Astaxanthin의 미셀 형성을 통한 가용화 및 추출 (Solubillzation and Extraction Of Antioxidant Astaxanthin by Micelle Formation from Phaffia rhodozyma Cell Homogenate)

  • 김영범;류강;임교빈;이은규
    • KSBB Journal
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    • 제17권2호
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    • pp.176-181
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    • 2002
  • Astaxanthin (3,3'-dihydroxy-${\beta}$, ${\beta}$-carotene-4-4'-dione), a natural pigment of pink to red color, is widely distributed in nature particularly in the skin layer of salmonoids and the crust of shrimp, lobster, etc. Recently, it was produced from the yeast culture of Phaffia rhodozyma. Because of its high thermal stability and antioxidant functionality, its applications can be extended into food, cosmetics, and pharmaceutical ingredient beyond the traditional feed additive. Because of its very high lipophilicity, astaxanthin has been extracted traditionally by strong organic solvents such as chloroform, petroleum ether, acetone, etc. In this study, we developed a surfactant-based solubillization system for astaxanthin, and used it to extract astaxanthin from disrupted yeast cells. Among Tween 20, Triton X-100 and SDS, Tween 20 was identified as the most suitable surfactant in terms of extraction capacity and safety. The ethylene oxide group of Tween 20 was identified as the most significant factor to increase the HLB value that determined the extraction capacity. The effects of micelle formation condition, such as the molar ratio of astaxanthin and Tween 20, pH, and ionic strength were also investigated. pH and ionic strength showed no significant effects. The optimal molar ratio between astaxanthin and Tween 20 was 1 : 12. Antioxidant activity of astaxanthin was higher than ${\beta}$-carotene and ${\alpha}$-tocopherol. Astaxanthin in the crude extract from the yeast cell was more resistant to air and/or light degradation than pure astaxanthin, probably because of the presence of other carotenoids and lipids.

A Study on Improvement and Degradation of Si/SiO2 Interface Property for Gate Oxide with TiN Metal Gate

  • Lee, Byung-Hyun;Kim, Yong-Il;Kim, Bong-Soo;Woo, Dong-Soo;Park, Yong-Jik;Park, Dong-Gun;Lee, Si-Hyung;Rho, Yong-Han
    • Transactions on Electrical and Electronic Materials
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    • 제9권1호
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    • pp.6-11
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    • 2008
  • In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.

Effect of Annealing Temperature on the Electrical Performance of SiZnSnO Thin Film Transistors Fabricated by Radio Frequency Magnetron Sputtering

  • Kim, Byoungkeun;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.55-57
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    • 2017
  • Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

Flavour Chemistry of Chicken Meat: A Review

  • Jayasena, Dinesh D.;Ahn, Dong Uk;Nam, Ki Chang;Jo, Cheorun
    • Asian-Australasian Journal of Animal Sciences
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    • 제26권5호
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    • pp.732-742
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    • 2013
  • Flavour comprises mainly of taste and aroma and is involved in consumers' meat-buying behavior and preferences. Chicken meat flavour is supposed to be affected by a number of ante- and post-mortem factors, including breed, diet, post-mortem ageing, method of cooking, etc. Additionally, chicken meat is more susceptible to quality deterioration mainly due to lipid oxidation with resulting off-flavours. Therefore, the intent of this paper is to highlight the mechanisms and chemical compounds responsible for chicken meat flavour and off-flavour development to help producers in producing the most flavourful and consistent product possible. Chicken meat flavour is thermally derived and the Maillard reaction, thermal degradation of lipids, and interaction between these 2 reactions are mainly responsible for the generation of flavour and aroma compounds. The reaction of cysteine and sugar can lead to characteristic meat flavour specially for chicken and pork. Volatile compounds including 2-methyl-3-furanthiol, 2-furfurylthiol, methionol, 2,4,5-trimethyl-thiazole, nonanol, 2-trans-nonenal, and other compounds have been identified as important for the flavour of chicken. However 2-methyl-3-furanthiol is considered as the most vital chemical compound for chicken flavour development. In addition, a large number of heterocyclic compounds are formed when higher temperature and low moisture conditions are used during certain cooking methods of chicken meat such as roasting, grilling, frying or pressure cooking compared to boiled chicken meat. Major volatile compounds responsible for fried chicken are 3,5-dimethyl-1,2,4-trithiolanes, 2,4,6-trimethylperhydro-1,3,5-dithiazines, 3,5-diisobutyl-1,2,4-trithiolane, 3-methyl-5-butyl-1,2,4-trithiolane, 3-methyl-5-pentyl-1,2,4-trithiolane, 2,4-decadienal and trans-4,5-epoxy-trans-2-decenal. Alkylpyrazines were reported in the flavours of fried chicken and roasted chicken but not in chicken broth. The main reason for flavour deterioration and formation of undesirable "warmed over flavour" in chicken meat products are supposed to be the lack of ${\alpha}$-tocopherol in chicken meat.

자동차용 고강도 폴리머 복합재료의 변형과 강도에 관한 연구 (A Study on Deformation and Strength of High-Strength Polymer Composites Using Automobiles)

  • 임재규;신재훈;박한주
    • 대한기계학회논문집A
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    • 제25권7호
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    • pp.1082-1088
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    • 2001
  • Nowadays study on recycling disused plastics for automobiles was lively progressed. Rubber and talcum powder was added to retrieve degradation of physical properties caused by recycling disused polypropylene. The effect of the temperature, the fatigue load and the loading speed on DEN(double edged notch) specimen which was made by the pp-rubber composites during fracture was studied by. DEN specimen was made on PP-rubber composites through the injection molding. With increasing temperature the fracture strength was linearly decreased and the fracture energy was increased by $0^{\circ}C$ and after that decreased. In the same temperature the fracture strength during increasing the notch radius was hardly increased. The fracture behaviour at low and high loading speed was different entirely. At high loading speed plastic region was small and fracture behaviour was seen to brittle fracture tendency. With increasing fatigue load fracture energy was first rapidly decreased and subsequently steady when radius of notch tip was 2mm, but Maximum load during fracture scarcely varied. The deformation mechanism of polypropylene-rubber composites during fracture was studied by SEM fractography. A strong plastic deformation of the matrix ahead of the notch/crack occurred. The deformation seem to be enhanced by a thermal blunting of the notch/crack.

Buongiorno의 비균질 모델을 사용한 나노유체의 층류 자연대류 해석 (COMPUTATION OF LAMINAR NATURAL CONVECTION OF NANOFLUID USING BUONGIORNO'S NONHOMOGENEOUS MODEL)

  • 최석기;김성오;이태호
    • 한국전산유체공학회지
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    • 제18권4호
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    • pp.25-34
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    • 2013
  • A numerical study of a laminar natural convection of the CuO-water nanofluid in a square cavity using the Buongiorno's nonhomogeneous model is presented. All the governing equations including the volume fraction equation are discretized on a cell-centered, non-uniform grid employing the finite-volume method with a primitive variable formulation. Calculations are performed over a range of Rayleigh numbers and volume fractions of the nanopartile. From the computed results, it is shown that both the homogeneous and nonhomogeneous models predict the deterioration of the natural convection heat transfer well with an increase of the volume fraction of nanoparticle at the same Rayleigh number, which was observed in the previous experimental studies. It is also shown that the differences in the computed results of the average Nusselt number at the wall between the homogeneous and nonhomogeneous models are very small, and this indicates that the slip mechanism of the Brown diffusion and thermophoresis effects are negligible in the laminar natural convection of the nanofluid. The degradation of the heat transfer with an increase of the volume fraction of the nanoparticle in the natural convection of nanofluid is due to the increase of the viscosity and the decrease of the thermal expansion coefficient and the specific heat. It is clarified in the present study that the previous controversies between the numerical and experimental studies are owing to the different definitions of the Nusselt number.

Investigation of TaNx diffusion barrier properties using Plasma-Enhanced ALD for copper interconnection

  • 한동석;문대용;권태석;김웅선;황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.178-178
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    • 2010
  • With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

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폐 FRP/석분슬러지 충전 복합재의 제조 및 기계적 물성에 관한 연구 (A Study on the Preparation ana Mechanical Properties of Composites Reinforced FRP Waste and Rock-Crush Sludge)

  • 황택성;박진원;이철호
    • 폴리머
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    • 제24권6호
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    • pp.829-836
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    • 2000
  • SMC 욕조 생산 시 발생하는 폐 FRP와 석재 가공공정에서 발생되는 석분슬러지를 재활용하기 위하여 불포화에스테르 매트릭스 수지에 분말 충전하여 복합재를 제조하였다. 또한 충전제와 매트릭스 간의 계면결합력을 향상시키기 위해 석분을 실란 커플링제 ${\gamma}$-methacryloxypropyltrimethoxysiiane (${\gamma}$-MPS)로 전처리하여 복합재를 제조하고 기계적 물성 및 계면현상을 관찰하였다. 복합재의 굴곡탄성율은 석분함량이 10 wt%, 실란커플링제의 농도가 3 wt%일 때 가장 우수하였으며 석분 충전량이 증가함에 따라 감소하는 경향을 보였다. 또한 복합재의 초기 열분해온도는 352~359$^{\circ}C$이었으며 이 온도에서 중량감소율은 약 3%로 충전제의 양에 관계없이 거의 일정한 경향을 보였다. ${\gamma}$-MPS 처리에 따른 복합재의 물성변화를 관찰한 결과 충전제와 매트릭스 수지간 계면결합력이 증진되어 물리 화학적으로 안정한 결합을 이루고 있고 pull out현상이 발생하지 않음을 확인할 수 있었다.

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탄소나노튜브로 강화시킨 Poly(ethylene terephthalate) 나노복합재료 (Carbon Nanotubes Reinforced Poly(ethylene terephthalate) Nanocomposites)

  • 최수희;정영진
    • 폴리머
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    • 제38권2호
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    • pp.240-249
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    • 2014
  • 다중벽 탄소나노튜브(MWNT)로 보강된 폴리에스터(PET) 복합재료에 관한 연구를 수행하였다. PET와 MWNT간의 계면결합력을 향상시키기 위하여, MWNT 표면에 bishydroxyethylene-terephthalate(BHET)를 도입하였다. 이렇게 기능화된 MWNT를 0.5~2.0 wt% 범위에서 이축압출기를 이용하여 PET와 용융 혼합하였다. MWNT/PET 복합재료를 필라멘트로 방사하고, 이를 연신 및 열처리하여 특성 분석을 하였다. 이로부터 복합섬유의 결정화 온도와 열분해 온도가 MWNT로 인하여 증가함을 알 수 있었으며, 항복응력과 인성은 MWNT의 1 wt%의 첨가만으로도 30%이상 증가함을 알 수 있었다. 따라서 MWNT를 BHET로 기능화하는 방법은 폴리에스터에 탄소나노튜브를 효과적으로 분산시키고 계면결합력을 증가시키는데 매우 효과적임을 알 수 있었다.

혼합기체 sputtering 법으로 증착된 Cu 확산방지막으로의 Ti-Si-N 박막의 특성 연구 (A Study of Reactively Sputtered Ti-Si-N Diffusion Barrier for Cu Metallization)

  • 박상기;이재갑
    • 한국재료학회지
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    • 제9권5호
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    • pp.503-508
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    • 1999
  • We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

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