Browse > Article
http://dx.doi.org/10.4313/TEEM.2008.9.1.006

A Study on Improvement and Degradation of Si/SiO2 Interface Property for Gate Oxide with TiN Metal Gate  

Lee, Byung-Hyun (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd., School of Information and Communication Engineering, Sungkyunkwan University)
Kim, Yong-Il (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
Kim, Bong-Soo (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
Woo, Dong-Soo (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
Park, Yong-Jik (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
Park, Dong-Gun (Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
Lee, Si-Hyung (Process Development Team, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
Rho, Yong-Han (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.1, 2008 , pp. 6-11 More about this Journal
Abstract
In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.
Keywords
TiN gate; Hydrogen anneal; Plasma nitridation; Interface state; FN stress; Activation energy;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 B. Maiti, P. J. Tobin, C. Hobbs, R. I. Hegde, F. Huang, D. L. O'Meara, D. Jovanovic, M. Mendicino, J. Chen, D. Connelly, O. Adetutu, J. Mogab, J. Candelaria, and L. B. La, "PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology", Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International 6-9, p. 781, 1998
2 D. G. Park and T. K. Kim, "Effects of fluorine and chlorine on the gate oxide integrity of $W/TiN/SiO_2/Si$ metal-oxide-semiconductor structure", Thin Solid Films, Vol. 483, p. 232, 2005   DOI   ScienceOn
3 J. C. Hu, H. Yang, R. Kraft, A. L. P. Rotondaro, S. Hattangady, W. W. Lee, R. A. Chapman, C.-P. Chao, A. Chatterjee, M. Hanratty, M. Rodder, and I.-C. Chen, "Feasibility of using W/TiN as metal gate for conventional 0.13 ${\mu}m$ CMOS technology and beyond", Electron Devices Meeting, 1997. Technical Digest., International, p. 825, 1997
4 S. H. Bae, S.-C. Song, K. S. Choi, G. Bersuker, G. A. Brown, D.-L. Kwong, and B. H. Lee, "Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric", Microelectronic Engineering, Vol. 83, p. 460, 2006   DOI   ScienceOn
5 S. H. Hong, T. S. Jeon, B. Y. Koo, S. J. Hyun, Y. G. Shin, U.-I. Chung, and J. T. Moon, "The development of dual gate poly scheme with plasma nitrided gate oxide for mobile high performance DRAMs: plasma process monitoring and the correlation with electrical results", Integrated Circuit Design and Technology, ICICDT '04. International Conference on 2004, p. 219, 2004
6 T. S. Jang, M. H. Ha, K. D. Yoo, and B. K. Kang, "Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectrics", Microelectronic Engineering, Vol. 75, p. 443, 2004   DOI   ScienceOn
7 S. Abermann, J. Efavi, G. Sjöblom, M. Lemme, J. Olsson, and E. Bertagnolli, "Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown $HfO_2$ and $ZrO_2\;high-{\kappa}$ dielectrics", Microelectronics Reliability, Vol. 47, p. 536, 2007   DOI   ScienceOn
8 R. Li and Q. Xu, "Damascene W/TiN gate MOSFETs with improved performance for 0.1-/spl mu/m regime", Electron Devices, IEEE Transactions on, Vol. 49, p. 1891, 2002   DOI   ScienceOn
9 J. M. Lee, H. S. Seo, and S. N. Hong, "Analysis of PMOS capacitor with thermally robust molybdenium gate", J. of KIEEME(in Korean), Vol. 18, No. 7, p. 594, 2005   과학기술학회마을   DOI   ScienceOn
10 M. C. Lemme, J. K. Efavi, H. D. B. Gottlob, T. Mollenhauer, T. Wahlbrink, and H. Kurz, "Comparison of metal gate electrodes on MOCVD $HfO_2$", Microelectronics and Reliability, Vol. 45, p. 953, 2005   DOI   ScienceOn
11 S. S. Tan, C. H. Ang, C. M. Lek, T. P. Chen, B. J. Cho, A. See, and L. Chan, "Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18 um technology and beyond", Physical and Failure Analysis of Integrated Circuits, Proceedings of the 9th International Symposium, p. 254, 2002
12 H. Moriceau, A. M. Cartier, and B. Aspar, "Hydrogen annealing treatment used to obtain high quality SOI surfaces", Proceedings 1998 IEEE International SOI Conference, p. 37, 1998
13 D. H. LEE, S. H. Joo, G. H. Lee, J. Moon, T. E. Shim, and J. G. Lee, "Characteristics of CMOSFETs with sputter-deposited W/TiN stack gate", VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on, p. 119, 1995
14 V. Nathan and N. C. Das, "Gate-induced drain leakage current in MOS device", Electron Device, IEEE transactions on, Vol. 40, p. 1888, 1993   DOI   ScienceOn
15 D. C. Mayer, "Modes of operation and radiation sensitivity of ultra thin SOI transistors", SOS/SOI Technology Conference, p. 52, 1989
16 S. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, and R. D. Schrimpf, "Reactions of hydrogen with $Si-SiO_2$ interfaces", Nuclear Science, IEEE transactions on, Vol. 47, p. 2262, 2000   DOI   ScienceOn
17 D. J. Dimaria, "Defect production, degradation, and breakdown of silicon dioxide films", Solid-State Electronics, Vol. 41, p. 957, 1997   DOI   ScienceOn
18 P. K. Hurley, K. Cherkaoui, S. McDonnell, G. Hughes, and A. W. Groenland, "Characterisation and passivation of interface defects in (1 0 0)-$Si/SiO_2/HfO_2/TiN$ gate stacks", Microelectronics Reliability, Vol. 47, p. 1195, 2007   DOI   ScienceOn
19 H. Kuribayashi, M. Gotoh, R. Hiruta, R. Shimizu, K. Sudoh, and H. Iwasaki, "Observation of Si(1 0 0) surfaces annealed in hydrogen gas ambient by scanning tunneling microscopy", Applied Surface Science, Vol. 252, p. 5275, 2006   DOI   ScienceOn
20 H. C. Cheng, W. K. Lai, C. C. Hwang, M. H. Juang, S. C. Chu, and T. F. Liu, "Suppression for boron penetration for P+ stacked poly-Si gate by using inductively coupled $N_2$ plasma treatment", IEEE Electron Device Letter, Vol. 20, p. 535, 1999   DOI   ScienceOn
21 M.C. Lemme, J. K. Efavi, T. Mollenhauer, M. Schmidt, H. D. B. Gottlob, T. Wahlbrink, and H. Kurz, "Nanoscale TiN metal gate technology for CMOS integration", Microelectronic Engineering, Vol. 83, p. 1551, 2006   DOI   ScienceOn
22 A. Bravaix, D. Vuillaume, D. Goguenheim, D. Dorval, and M. Haond, "Improved hot-carrier immunity of p-MOSFET's with 8nm thick nitrided gate-oxide during bi-directional stressing", Microelectronic Engineering, Vol. 28, p. 273, 1995   DOI   ScienceOn