• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.141-141
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.119-119
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.24-24
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• 1995

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.84.1-84.1
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• 2010

Since the discovery of the carbon nanotube(CNTs), they have attracted much attention because of unique properties that may impact many fields of science and technology. The considerable properties of CNTs include high surface area, outstanding thermal, electrical conductivity and mechanical stability. However, uniform deposition of Pt nanoparticles on carbon surface remains inaccessible territory because of the inert carbon surface. In this study, we prepared directly oriented CNTs on carbon paper as a catalyst support in cathode electrode. carbon surface was functionalized using aryl diazonium salt for increasing adhesion of Ni particles which is precursor for growing CNTs. For fabricate electrode, CNTs on carbon paper were grown by chemical vapor deposition using Ni catalyst and Pt nanoparticles were deposited on CNTs oriented carbon paper by polyol method. The performance was measured using Proton electrolyte Membrane Fuel Cell(PEMFC). The structure and morphology of the Pt nanoparticles on CNTs were characterized by Scanning electron Microscopy(SEM) and Transmission electron Microscopy (TEM). The average diameter of Pt nanoparticles was 3nm.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.171-175
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• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

• Journal of the Korean Applied Science and Technology
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• v.21 no.2
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• pp.174-181
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• 2004

Multi-walled carbon nanotubes (CNTs) were prepared by thermal chemical vapor deposition (CVD) and microwave plasma chemical vapor deposition (MPCVD) using various combination of binary catalysts with four transition metals such as Fe, Co, Cu, and Ni. In the preparation of CNTs from acetylene precursor by thermal CVD, the CNTs with very high yield of 43.6 % was produced over $Fe-Co/Al_2O_3$. The highest yield of CNTs was obtained with the catalyst reduced for 3 hr and the yield was decreased with increasing reduction time to 5 hr, due to the formation of $FeAl_2O_4$ metal-aluminate. On the other hand, the CNTs prepared by acethylene plasma CVD had more straight, smaller diameter, and larger aspect ratio(L/D) than those prepared by thermal CVD, although their yield had lower value of 27.7%. The degree of graphitization of CNTs measured by $I_d/I_g$ value and thermal degradation temperature were 1.04 and $602^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.264-264
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• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.3
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• pp.91-94
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• 2007

Single-crystalline $SnO_2$ nanowires were successfully grown on Si(001) substrates via vapor-liquid-solid mechanism in a thermal chemical vapor deposition. Large quantity of $SnO_2$ nanowires were synthesized at temperature ranges of $950{\sim}1000^{\circ}C$ in Ar atmosphere. It was found that the grown $SnO_2$ nanowires are of a tetragonal rutile structure and single crystalline by diffraction and transmission electron microscopy measurements. Broad emission located at about 600 m from the grown nanowires was clearly observed in room temperature photoluminescence measurements, indicating that the emission band originated from defect level transition into $SnO_2$ nanowires.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.58.2-58.2
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• 2010

본 연구에서는 n-type wafer에 비정질 실리콘을 증착한 이종접합 태양전지를 열처리 방법을 이용하여 열처리의 효과를 분석함으로써 이종접합 태양전지에 효율적인 열처리 효과에 대하여 연구하였다. P, N-layer는 PECVD(Plasma-enhanced chemical vapor deposition) I-layer는 HWCVD(Hot wire chemical vapor deposition), ITO는 RF 마그네트론 스퍼터링법으로 동일한 조건에서 제작하였고 rapid thermal process를 이용하여 진공 중에서 $150^{\circ}C$, $200^{\circ}C$, $220^{\circ}C$, $250^{\circ}C$까지 열처리를 하였다. 열처리 전과 후 QSSPC로 minority carrier life time, 자외 가시선 분광분석 장치로 투과 반사도를, Ellipsometer로 흡수 계수 등의 변화를 조사하였다. 열처리 후 Minority carrier life time, Voc 및 광변환 효율이 증가하였다.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.39-42
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• 2007

Temperature distribution of the circular heat source was studied by analyzing the heat transfer of the environment of the circular source for OLED. Circular nozzle source was used to fabricate thin organic layer as the organic material in it was heated, vaporized and deposited to the large size panel. A modified heater structure of circular source has been suggested. The results of numerical analysis shows that the modified heater structure can use 15% more powder in a batch than the original heater structure does. Moreover, the modified heater structure can improve the uniformity of organic vapor deposition by controlling the temperature.