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Synthesis and characterization of $SnO_2$ nanowires on Si substrates in a thermal chemical vapor deposition process  

Lee, Deuk-Hee (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Park, Hyun-Kyu (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Lee, Sam-Dong (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Jeong, Soon-Wook (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Kim, Sang-Woo (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.17, no.3, 2007 , pp. 91-94 More about this Journal
Abstract
Single-crystalline $SnO_2$ nanowires were successfully grown on Si(001) substrates via vapor-liquid-solid mechanism in a thermal chemical vapor deposition. Large quantity of $SnO_2$ nanowires were synthesized at temperature ranges of $950{\sim}1000^{\circ}C$ in Ar atmosphere. It was found that the grown $SnO_2$ nanowires are of a tetragonal rutile structure and single crystalline by diffraction and transmission electron microscopy measurements. Broad emission located at about 600 m from the grown nanowires was clearly observed in room temperature photoluminescence measurements, indicating that the emission band originated from defect level transition into $SnO_2$ nanowires.
Keywords
$SnO_2$; Nanowire; CVD; VLS; Catalyst; Single crystalline; Tetragonal structure; Photoluminescence; Free exciton; Defect level;
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