• Title/Summary/Keyword: thermal threshold

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Current Sensing Trench Gate Power MOSFET for Motor Driver Applications (모터구동 회로 응용을 위한 대전력 전류 센싱 트렌치 게이트 MOSFET)

  • Kim, Sang-Gi;Park, Hoon-Soo;Won, Jong-Il;Koo, Jin-Gun;Roh, Tae-Moon;Yang, Yil-Suk;Park, Jong-Moon
    • Journal of IKEEE
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    • v.20 no.3
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    • pp.220-225
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    • 2016
  • In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

Preparation and Properties of Organic Electroluminescent Devices (유기 전계발광소자의 제작과 특성 연구)

  • 노준서;장호정
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.1
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    • pp.9-13
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    • 2002
  • Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

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A study on the management of harmful working environments for Increase of Labor productivity. (노동생산성 향상을 위한 유해작업환경관리에 관한 연구)

  • 조태웅;유익현;박성애
    • Journal of Environmental Health Sciences
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    • v.3 no.1
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    • pp.27-44
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    • 1976
  • This study was carried out to evaluate the harmful factors in working environments and to investigate the labor productivity after improvement of environments, surveying 93 industrial establishments of 10 industries located in Youngdeungpo industrial area in Seoul. The results obtained were as follows: 1) The highest noise level of 125dB(A) was indicated at the rolling process of transport equipment manufacturing industry. 2) The best illumination level was shown in precise machinery industry and the worst was indicated in rubber products, metallic products and transport equipment manufacturing industries. 3) Thermal conditions were above threshold limit value (TLV) at more than two processes of all industries except printing industry. 4) The highest dust concentration was determined in textile and wearing manufacturing industry. 5) Organic solvents were detected at 52 processes in 93 industrial establishments and 33 processes of them showed higher than TLV. The results about harmful chemicals were as follows: a) sulfur dioxide ($SO_2$)was determined higher than TLV on welding process of metallic product manufacturing industry and heat treatment process of transport equipment manufacturing industry. b) Carbon monoxide (CO) concentration was 700ppm at heat treatment process of transport equipment manufacturing industry, indicating 14 times of TLV. c) vinylchloride concentration in the air of PVC raw material mixing process and PVC preparation process of chemical product manufacturing industry was determined higher than TLV. d) Hydrochloride (HCl) concentration in the air of wire expanding process of transport equipment manufacturing industry was determined higher than TLV. 7) Higher values of lead concentration than TLV were determined at lead welding metallic product manufacturing industry and type planting process of process of printing industry, $1.8mg/m^3$ and $0.3mg/m^3$ respectively. 9) 22, 968 of 52, 855 workers (i.e. 43.5%) in 93 industries were exposed to various harmful agents. 10) It was found that the improvement of illumination in electric apparatus manufacturing industry (from 20~40 lux to 420 lux) resulted in an increase in productivity of 6.5% per capita and a decrease in faulty products of 19%. 11) Improvement of environments using local exhaust ventilation system resulted in a decrease of harmful substances lower than TLV and an increase in productivity of 11.4%. 12) Improvement of shovelling tools based on ergonomics resulted in a reduction in energy expenditure of 25.3% and an increase in productivity of 32.2% per capita.

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State-of-Arts of Primary Concrete Degradation Behaviors due to High Temperature and Radiation in Spent Fuel Dry Storage (사용후핵연료 건식저장 콘크리트의 고열과 방사선으로 인한 주요 열화거동 분석)

  • Kim, Jin-Seop;Kook, Donghak;Choi, Jong-Won;Kim, Geon-Young
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.16 no.2
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    • pp.243-260
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    • 2018
  • A literature review on the effects of high temperature and radiation on radiation shielding concrete in Spent Fuel Dry Storage is presented in this study with a focus on concrete degradation. The general threshold is $95^{\circ}C$ for preventing long-term degradation from high temperature, and it is suggested that the temperature gradient should be less than $60^{\circ}C$ to avoid crack generation in concrete structures. The amount of damage depends on the characteristics of the concrete mixture, and increases with the temperature and exposure time. The tensile strength of concrete is more susceptible than the compressive strength to degradation due to high temperature. Nuclear heating from radiation can be neglected under an incident energy flux density of $10^{10}MeV{\cdot}cm^{-2}{\cdot}s^{-1}$. Neutron radiation of >$10^{19}n{\cdot}cm^{-2}$ or an integrated dose of gamma radiation exceeding $10^{10}$ rads can cause a reduction in the compressive and tensile strengths and the elastic moduli. When concrete is highly irradiated, changes in the mechanical properties are primarily caused by variation in water content resulting from high temperature, volume expansion, and crack generation. It is necessary to fully utilize previous research for effective technology development and licensing of a Korean dry storage system. This study can serve as important baseline data for developing domestic technology with regard to concrete casks of an SF (Spent Fuel) dry storage system.

Performance of Pentacene-based Thin-film Transistors Fabricated at Different Deposition Rates (증착 속도에 따른 펜타센 박막 트랜지스터의 성능 연구)

  • Hwang, Jinho;Kim, Duri;Kim, Meenwoo;Lee, Hanju;Babajanyan, Arsen;Odabashyan, Levon;Baghdasaryan, Zhirayr;Lee, Kiejin;Cha, Deokjoon
    • New Physics: Sae Mulli
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    • v.68 no.11
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    • pp.1192-1195
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    • 2018
  • We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of $0.05{\AA}/s$ to $1.14{\AA}/s$. The thickness of the drain-source gold electrode was 50 nm. The mobility was $1.9{\times}10^{-1}cm^2/V{\cdot}s$ at a deposition rate of $0.05{\AA}/s$, the mobility increased to $5.2{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate was increased to $0.4{\AA}/s$, and then the mobility decreased to $6.5{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate decreased to $1.14{\AA}/s$. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate.

Electrical Characterization of Lateral NiO/Ga2O3 FETs with Heterojunction Gate Structure (이종접합 Gate 구조를 갖는 수평형 NiO/Ga2O3 FET의 전기적 특성 연구)

  • Geon-Hee Lee;Soo-Young Moon;Hyung-Jin Lee;Myeong-Cheol Shin;Ye-Jin Kim;Ga-Yeon Jeon;Jong-Min Oh;Weon-Ho Shin;Min-Kyung Kim;Cheol-Hwan Park;Sang-Mo Koo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.413-417
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    • 2023
  • Gallium Oxide (Ga2O3) is preferred as a material for next generation power semiconductors. The Ga2O3 should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga2O3 is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu2O. Research the lateral-type FET structure of NiO/Ga2O3 heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×1017 to 1×1019 cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at ID = 1×10-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga2O3 region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at ID =1×10-3 A/mm.

Assessment of Pollen Allergenicity Index Under Climate Change in the Seoul Children's Grand Park: Present, and Future (기후변화에 따른 도시 녹지 꽃가루 알레르기 지수 변화 분석 - 서울어린이대공원을 대상으로 -)

  • Yerin Hwang;Sukyoung Kim;Jaeyeon Choi;Chan Park
    • Journal of Environmental Impact Assessment
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    • v.33 no.3
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    • pp.99-115
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    • 2024
  • A worldwide effort is underway to utilize urban parks as a means ofresponding to climate change, providing various benefits to citizens. However, it also has several negative effects, such as an increase in pollen allergies. These negative impacts have been defined as ecosystem disservices and discussed globally, although the discussion remains insufficient domestically. In particular, pollen allergies have been discussed as a typical ecosystem disservice, with negative impacts such as an increase in symptoms attributed to higher pollen production or the growth of trees with higher antigenicity. The WHO reports that approximately 30% of the world's population suffers from pollen allergies. Many recent studies indicate that the harm induced by pollen allergies is expected to increase due to changes in the climate and thermal environment. In this context, we aim to diagnose the allergenicity of current urban parks and assess changes according to climate change scenarios. To achieve this goal, we assess pollen allergenicity in Seoul Children's Grand Park using the Urban Green Space Allergenicity Index (IUGZA) as the first step towards discussing ecosystem disservices. We found that the IUGZA value in the target area exceeds the threshold suggested in previous research, causing harm due to pollen allergies and is expected to increase according to climate change scenarios. We conclude that this result indicates that social harm from pollen allergies in urban parks may increase due to climate change. Therefore, we emphasize the necessity of discussing ecosystem disservices in the composition of urban parks.

Background effect on the measurement of trace amount of uranium by thermal ionization mass spectrometry (열이온화 질량분석에 의한 극미량 우라늄 정량에 미치는 바탕값 영향)

  • Jeon, Young-Shin;Park, Yong-Joon;Joe, Kih-Soo;Han, Sun-Ho;Song, Kyu-Seok
    • Analytical Science and Technology
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    • v.21 no.6
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    • pp.487-494
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    • 2008
  • An experiment was performed for zone refined Re-filament and normal (nonzone refined) Re-filament to reduce the background effect on the measurement of low level uranium samples. From both filaments, the signals which seemed to come from a cluster of light alkali elements, $(^{39}K_6)^+$, $(^{39}K_5+^{41}K)^+$ and $PbO_2$ were identified as the isobaric effect of the uranium isotopes. The isobaric effect signal was completely disappeared by heating the filament about $2000^{\circ}C$ at < $10^{-7}$ torr of vacuum for more than 1.5 hour in zone refined Refilaments, while that from the normal Re-filaments was not disappeared completely and was still remained as 3 pg. of uranium as the impurities after the degassing treatment was performed for more than 5 hours at the same condition of zone refined filaments. A threshold condition eliminating impurities were proved to be at 5 A and 30 minutes of degassing time. The uranium content as an impurity in rhenium filament was checked with a filament degassing treatment using the U-233 spike by isotope dilution mass spectrometry. A 0.31 ng of U was detected in rhenium filament without degassing, while only 3 pg of U was detected with baking treatment at a current of 5.5 A for 1 hr. Using normal Re-filaments for the ultra trace of uranium sample analysis had something problem because uranium remains to be 3 pg on the filament even though degassed for long hours. If the 1 ng uranium were measured, 0.3% error occurred basically. It was also conformed that ionization filament current was recommended not to be increased over 5.5 A to reduce the background. Finally, the contents of uranium isotopes in uranium standard materials (KRISS standard material and NIST standard materials, U-005 and U-030) were measured and compared with certified values. The differences between them showed 0.04% for U-235, 2% for U-234 and 2% for U-236, respectively.

Temperature-dependent Development Model of White Backed Planthopper (WBPH), Sogatella furcifera (Horvath) (Homoptera: Delphacidae) (흰등멸구 [Sogatella furcifera (Horvath)] 온도 발육 모델)

  • Park, Chang-Gyu;Kim, Kwang-Ho;Park, Hong-Hyun;Lee, Sang-Guei
    • Korean journal of applied entomology
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    • v.52 no.2
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    • pp.133-140
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    • 2013
  • The developmental times of the immature stages of Sogatella furcifera (Horvath) were investigated at ten constant temperatures (12.5, 15, 17.5, 20, 22.5, 25, 27.5, 30, 32.5, $35{\pm}1^{\circ}C$), 20~30% RH, and a photoperiod of 14:10 (L:D) h. Eggs were successfully developed on each tested temperature regimes except $12.5^{\circ}C$ and its developmental time was longest at $15^{\circ}C$ (22.5 days) and shortest at $32.5^{\circ}C$ (5.5 days). Nymphs successfully developed to the adult stage from $15^{\circ}C$ to $32.5^{\circ}C$ temperature regimes. Developmental time was longest at $15^{\circ}C$ (51.9 days) and it was decreased with increasing temperature up to $32.5^{\circ}C$ (9.0 days). The relationships between developmental rate and temperature were fitted by a linear model and seven nonlinear models (Analytis, Briere 1, 2, Lactin 2, Logan 6, Performance and modified Sharpe & DeMichele). The lower threshold temperature of egg and total nymphal stage was $10.2^{\circ}C$ and $12.3^{\circ}C$ respectively. The thermal constant required to complete egg and nymphal stage were 122.0 and 156.3 DD, respectively. The Briere 1 model was best fitted ($r^2$= 0.88~0.99) for all developmental stages, among seven nonlinear models. The distribution of completion of each development stage was well described by three non-linear models (2-parameter, 3-parameter Weibull and Logistic) ($r^2$= 0.91~0.96) except second and fifth instar.

Temperature-dependent Development and Fecundity of Rhopalosiphum padi (L.) (Hemiptera: Aphididae) on Corns (옥수수에서 기장테두리진딧물의 온도 의존적 발육과 산자 특성)

  • Park, Jeong Hoon;Kwon, Soon Hwa;Kim, Tae Ok;Oh, Sung Oh;Kim, Dong-Soon
    • Korean journal of applied entomology
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    • v.55 no.2
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    • pp.149-160
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    • 2016
  • Temperature-dependent development and fecundity of apterious Rhopalosiphum padi (L.) (Hemiptera: Aphididae) were examined at six constant temperatures (10, 15, 20, 25, 30 and $35{\pm}1.0^{\circ}C$, RH 50-70%, 16L:8D). Development time of nymphs decreased with increasing temperature and ranged from 42.9 days at $10^{\circ}C$ to 4.7 days at $30^{\circ}C$. The nymphs did not develop until adult at $35^{\circ}C$ because the nymphs died during the 2nd instar. The lower threshold temperature and thermal constant of nymph were estimated as $8.3^{\circ}C$ and 101.6 degree days, respectively. The relationships between development rates of nymph and temperatures were well described by the nonlinear model of Lactin 2. The distribution of development times of each stage was successfully fitted to the Weibull function. The longevity of apterious adults decreased with increasing temperature ranging from 24.0 days at $15^{\circ}C$ to 4.3 days at $30^{\circ}C$, with abnormally short longevity of 11.1 days at $10^{\circ}C$. R. padi showed the highest fecundity at $20^{\circ}C$ (38.2) and the lowest fecundity at $10^{\circ}C$ (3.9). In this study, we provided component sub-models for the oviposition model of R. padi: total fecundity, age-specific cumulative oviposition rate, and age-specific survival rate as well as adult aging rate based on the adult physiological age.