• 제목/요약/키워드: thermal interface material

검색결과 291건 처리시간 0.034초

Anchor Design to Prevent Debonding of Repair Mortar in Repaired Concrete Members

  • Choi Dong-Uk;Lee Chin-Yong
    • Journal of the Korea Concrete Institute
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    • 제17권4호
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    • pp.637-643
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    • 2005
  • Reinforced concrete beams or slabs are often strengthened or repaired using polymer modified cement concrete Stresses can develop in the structure by ambient temperature changes because thermal coefficients of the repair material and the existing concrete are typically different. Especially, shear stress often causes debonding of the interface. In this study, a rational procedure was developed where anchors can be designed in strengthened or repaired concrete members to prevent debonding at the interface. The current design procedure considers thicknesses and elastic moduli of the repair material and existing concrete, ambient temperature change, length, and beam-vs.-slab action. The procedure is also applicable to stresses developed by differential drying shrinkage.

Effect of Post Annealing in Oxygen Ambient on the Characteristics of Indium Gallium Zinc Oxide Thin Film Transistors

  • Jeong, Seok Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • 제27권10호
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    • pp.648-652
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    • 2014
  • We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

FINITE ELEMENT ANALYSIS OF STRESS AND TEMPERATURE DISTRIBUTION AFFECTED BY VARIOUS RESTORATIVE AND BASE MATERIAL (수복재와 이장재에 따른 응력과 온도 분포의 유한 요소 분석)

  • Lee, Jae-young;Oh, Tae-Suk;Lim, Sung-Sam
    • Restorative Dentistry and Endodontics
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    • 제25권3호
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    • pp.321-337
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    • 2000
  • Dental caries, one of the most frequent dental disease, become larger because it can be thought as a simple disease. Further more, it can progress to unexpected root canal therapy with fabrication of crown that needs reduction of tooth structure. Base is required in a large caries and ZOE, ZPC, glass ionomer are used frequently as base material. They, with restorative material, can affect the longevity of the restoration. In this study, we assume that the mandibular 1st molar has deep class I cavity. So, installing the 3 base material, 3 kinds of fillings were restored over the base as follows; 1) amalgam only, 2) amalgam with ZPC, 3) amalgam with ZOE, 4) amalgam with GI cement, 5) gold inlay with ZPC, 6) gold inlay with GI cement, 7) composite resin only, 8) composite resin with GI cement. After develop the 3-dimensional model for finite element analysis, we observe the distribution of stress and temperature with force of 500N to apical direction at 3 point on occlusal surface and temperature of 55 degree, 15 degree on entire surface. The analyzed results were as follow : 1. Principal stress produced at the interface of base, dentin, cavity wall was smallest in case of using GI cement as base material under the amalgam. 2. Principal stress produced at the interface of base, dentin, cavity wall was smaller in case of using GI cement as a base material than ZPC under gold inlay. 3. Composite resin-filled tooth showed stress distributed over entire tooth structure. In other words, there was little concentration of stress. 4. ZOE was the most effective base material against hot stimuli under the amalgam and GI cement was the next. In case of gold inlay, GI cement was more effective than ZPC. 5. Composite resin has the small coefficient of thermal conductivity. So, composite resin filling is the most effective insulating material.

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A Study on the Formation of Ti-capped NiSi and it′s Thermal Stability (Ti-capped NiSi 형성 및 열적안정성에 관한 연구)

  • 박수진;이근우;김주연;배규식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.288-291
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    • 2002
  • Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

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A Study on the Characteristic of Heat Transfer of PCM(Phase Change Material) at the Simultaneous Charging and Discharging Condition (동시 축·방열 조건에서 PCM의 열전달 특성에 관한 연구)

  • Lee, Donggyu;Park, Sechang;Chung, Dong-yeol;Kang, Cheadong
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • 제28권8호
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    • pp.305-310
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    • 2016
  • A thermal storage systems was designed to correspond to the temporal or quantitative variation in the thermal energy demand, and most of its heat is stored using the latent and sensible heat of the heat storage material. The heat storage method using latent heat has a very complex phenomenon for heat transfer and thermal behavior because it is accompanied by a phase change in the course of heating/cooling of the heat storage material. Therefore, many studies have been conducted to produce an experimentally accessible as well as numerical approach to confirm the heat transfer and thermal behavior of phase change materials. The purpose of this study was to investigate the problems encountered during the actual heat transfer from an internal storage tank through simulation of the process of storing and utilizing thermal energy from the thermal storage tank containing charged PCM. This study used analysis methods to investigate the heat transfer characteristics of the PCM with simultaneous heating/cooling conditions in the rectangular space simulating the thermal storage tank. A numerical analysis was carried out in a state considering natural convection using the ANSYS FLUENT(R) program. The result indicates that the slope of the liquid-solid interface in the analysis field changed according to the temperature difference between the heating surface and cooling surface.

후속열처리 공정을 이용한 FD Strained-SOI 1T-DRAM 소자의 동작특성 개선에 관한 연구

  • Kim, Min-Su;O, Jun-Seok;Jeong, Jong-Wan;Jo, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.35-35
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    • 2009
  • Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (${\Delta}I_s$) between "1" state and "0" state. The back interface of SOI based capacitorless 1T-DRAM memory cell plays an important role on the memory performance. As the back interface properties were degraded by increase rapid thermal annealing (RTA) process, the performance of 1T-DRAM was also degraded. On the other hand, the properties of back interface and the performance of 1T-DRAM were considerably improved by post RTA annealing process at $450^{\circ}C$ for 30 min in a 2% $H_2/N_2$ ambient.

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Crack propagation and deviation in bi-materials under thermo-mechanical loading

  • Chama, Mourad;Boutabout, Benali;Lousdad, Abdelkader;Bensmain, Wafa;Bouiadjra, Bel Abbes Bachir
    • Structural Engineering and Mechanics
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    • 제50권4호
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    • pp.441-457
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    • 2014
  • This paper presents a finite element based numerical model to solve two dimensional bi-material problems. A bi-material beam consisting of two phase materials ceramic and metal is modelled by finite element method. The beam is subjected simultaneously to mechanical and thermal loadings. The main objective of this study is the analysis of crack deviation located in the brittle material near the interface. The effect of temperature gradient, the residual stresses and applied loads on crack initiation, propagation and deviation are examined and highlighted.

Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique (급속 건식 열산화 방법에 의한 초박막 SiO2의 성장과 특성)

  • 정상현;김광호;김용성;이수홍
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • 제17권1호
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    • pp.21-26
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    • 2004
  • Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva & Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

Three Dimensional Adaptive Mesh Generator for Thermal Oxidation Simulation (열산화 공정 시뮬레이션을 위한 3차원 적응 메쉬 생성기 제작에 관한 연구)

  • 윤상호;이제희;윤광섭;원태영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.48-51
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    • 1995
  • We have developed the three dimensional mesh generator for three dimensional process simulation using the FEM(Finite Element Method). Tetrahedron element construct the presented three dimensional mesh, which is suitable for the simulation of three dimensional behavior of the LOCOS. The simulation of thermal oxidation is one of the problem in scale downed semiconductor processes. As three dimensional simulators use the huge size of the memory, we use the efficient method that generates the new nodes inside the growing oxide and removes the nodes nearby the SiO2/Si interface in silicon. The resented three dimensional mesh generator was designed to be used in various process simulations, for instance thermal oxidation, silicidation, nitridation, ion implantation, diffusion, and so on.

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Axisymmetric Temperature Analysis of Ventilated Disk using Equivalent Parameters (등가상수를 이용한 벤트레이트 디스크의 축대칭 온도 해석)

  • 여태인
    • Transactions of the Korean Society of Automotive Engineers
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    • 제11권1호
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    • pp.137-142
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    • 2003
  • In automotive brake systems, the frictional heat generated can cause high temperature at the interface of rotor and pad which may deteriorate the material properties of the sliding parts and can result in brake fade. Conventionally, a pie-shaped 3-dimentional model is adopted to calculate temperature of ventilated disk using finite element method. To overcome the difficulties in preparing 3D finite element model and reduce the computational time required, the ventilated rotor is to be analyzed, in this study, as an axisymmetric finite element model in which, taking into considerations the effects of cooling passages, a homogenization technique is used to obtain the equivalent thermal properties and boundary conditions for the elements placed at the vent holes. Numerical tests show the proposed procedure can be successfully applied in practice, replacing 3-dimensional thermal analysis of ventilated disk.