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http://dx.doi.org/10.4313/JKEM.2004.17.1.021

Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique  

정상현 (청주대학교 정보통신공학부)
김광호 (청주대학교 정보통신공학부)
김용성 (청주대학교 정보통신공학부)
이수홍 (세종대학교 전자정보통신공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.1, 2004 , pp. 21-26 More about this Journal
Abstract
Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.
Keywords
Ultra-thin silicon dioxide; Rapid thermal dry oxidation technique; oxidation rate; MOS tunnel capacitor; Tunneling mechanism;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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