• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1313-1314
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• 2006

For improvement of wear resistance property of atmospheric thermal plasma sprayed molybdenum (Mo) coating, diamond deposition on the atmospheric plasma sprayed molybdenum coating by the combustion flame chemical vapor deposition (CFCVD) has been operated. In this study, to diminish the thermal damage of the substrate during operation, a thermal insulator was equipped between substrate and water-cooled substrate holder. Consequently, diamond particles could be created on the Mo coating without fracture and peeling off. From these results, it was found that this process had a high potential in order to improve wear resistance of thermal sprayed coating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1220-1224
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• 2007

The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

• 대한기계학회논문집B
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• 제40권2호
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• pp.111-117
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• 2016

본 연구의 목적은 실리콘 열전달 조절을 위한 포논의 평균자유행로(Mean free path, MFP) 스펙트럼 열전달 기여도 예측이다. 열전달의 크기 효과는 포논의 MFP 와 재료의 특성길이가 비슷할 때 나타나는데, 나노시스템 응용을 위한 재료의 열전달 증감을 위해 포논 MFP 스펙트럼에 대한 열전달 기여도 예측이 중요하다. 이를 위해 포논의 주파수 의존성이 고려된 볼츠만 수송방정식(Boltzmann transport equation) 근간의 full phonon dispersion 모델을 통해 실리콘 박막(Silicon-on-Insulator) 트랜지스터의 실리콘 박막 두께 변화(41-177 nm)에 따른 포논 MFP 스펙트럼 열전달 특성 및 비등방성을 해석함으로써, 본 연구 결과는 향후 박막 트랜지스터에 대한 고효율 열소산(heat dissipation) 설계전략에 활용될 수 있다.

• 대한전자공학회논문지
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• 제21권5호
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• pp.90-99
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• 1984

양면에서 텅스텐 램프를 조사하는 실리콘 재결정시의 SOI(silicon-on-insulator) 다층구조에 대한 1차원적 온도 및 열원(열원)의 분포를 SOR(successive over-relaxation)방법을 이용하여 정상상태의 열방정식의 해로부터 구하였다. 열원의 분포는 광원의 스펙트럼, SOI sample 내부 계면에서의 다중반사, 광흡수 계수의 온도, 주파수 의존성 등을 고려하여 구하였으며, 열 방정식의 경계조건이 되는 wafer의 전면과 후면의 온도는 혹체복사 조건으로부터 구하였다. 내부계면에서는 전도열속(conduction heat flux)과 복사열속(radiation heat flux)에 의한 연속조건을 만족하도록 하였다. 본 문제에서의 온도분포와 열원의 분포는 상호간에 큰 영향을 주게 되므로, 두가지 변수가 일치되는 값을 보일 때까지 iteration을 계속하였다. Pyrometer을 이용하여 측정한 wafer 전면의 온도는 약1200°K이었고 이때의 simulation 결과는 1120°K 정도로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.120-124
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• 2005

In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.202.2-202.2
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• 2013

Ti2O3 is known as a typical Mott insulator with a transition temperature of near $200^{\circ}C$. Unlike VO2, Ti2O3 does not have a structural phase transition near the metal-insulator-transition (MIT) temperature. We investigated the temperature-dependent thermal vibration change using temperature-dependent x-ray absorption fine structure (XAFS) at Ti K-edge in the temperature range of 300~600 K. Ti2O3 powder and films were synthesized using thermal chemical vapor deposition (CVD) at $800{\sim}900^{\circ}C$. X-ray diffraction measurements show a single phased Ti2O3 at room temperature. XAFS confirmed no structural phase transition in the temperature of 300~600 K. A small but distinguishable structural disorder change was observed near the transition temperature. We will discuss the MIT behavior with the change of structural disorder.

• 한국수소및신에너지학회논문집
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• 제27권6호
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• pp.642-650
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• 2016

One of the most feasible solution for reducing the excessive energy consumption and carbon dioxide emission is usage of more efficient fuel such as hydrogen. As is well known, there are three viable technologies for storing hydrogen fuel: compressed gas, metal hydride absorption, and cryogenic liquid. In these technologies, the storage for liquid hydrogen has better energy density by weight than other storage methods. However, the cryogenic liquid storage has a significant disadvantage of boiling losses. That is, high performance of thermal insulation systems must be studied for reducing the boiling losses. This paper presents an experimental study on the effective thermal conductivities of the composite layered insulation with aerogel blankets($Cryogel^{(R)}$ Z and $Pyrogel^{(R)}$ XT-E) and Multi-layer insulation(MLI). The aerogel blankets are known as high porous materials and the good insulators within a soft vacuum range($10^{-3}{\sim}1$ Torr). Also, MLI is known as the best insulator within a high vacuum range(<$10^{-6}{\sim}10^{-3}$ Torr). A vertical axial cryogenic experimental apparatus was designed to investigate the thermal performance of the composite layered insulators under cryogenic conditions as well as consist of a cold mass tank, a heat absorber, annular vacuum space, and an insulators space. The composite insulators were laminated in the insulator space that height was 50 mm. In this study, the effective thermal conductivities of the materials were evaluated by measuring boil-off rate of liquid nitrogen and liquid argon in the cold mass tank.