• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1313-1314
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• 2006

For improvement of wear resistance property of atmospheric thermal plasma sprayed molybdenum (Mo) coating, diamond deposition on the atmospheric plasma sprayed molybdenum coating by the combustion flame chemical vapor deposition (CFCVD) has been operated. In this study, to diminish the thermal damage of the substrate during operation, a thermal insulator was equipped between substrate and water-cooled substrate holder. Consequently, diamond particles could be created on the Mo coating without fracture and peeling off. From these results, it was found that this process had a high potential in order to improve wear resistance of thermal sprayed coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1220-1224
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• 2007

The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.111-117
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• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.90-99
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• 1984

A onetimensional distribution of the temperature and the heat source in the SOI (silicon-on-insulator) multi-layer structure illuminated by tungsten lamps from both sides was obtained by solving the heat equation in steady state on a finite difference grid using successive over-relaxation method. The heat source distribution was obtained by considering such features as spectral components of the light source, multiple reflection at the internal interfaces, temperature and frequency dependence of the light absorption coefficient, etc. The front and back surface temperatures, which are boundary conditions for the heat equation, were derived from a requirement that they satisfy the radiation conditions. The radiation flux as well as the conduction flux was considered in modelling the thermal behaviour at the internal interfaces. Since the temperature and the heat source profiles are strongly dependent upon each other, the calculation of each profile was iterated using the updated profile of the other until they are consistent with each other. The experimental temperature at the front surface of the wafer as measured by Pyrometer was about 1200$^{\circ}$K, while the simulated temperature was 1120$^{\circ}$K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.120-124
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• 2005

In this work, MOS capacitors were used to study the electrical properties of Mo gate electrode deposited on ZrO$_2$. The workfunctions of Mo gate extracted from C-V curves were appropriate for PMOS. Thermal stability of Mo metal was investigated by analyzing the variations of workfunction and EOT(effective oxide thickness) after 600, 700, and 800 $^{\circ}C$ RTA(rapid thermal annealing). It was found that Mo gate was stable up to 800 $^{\circ}C$ with underlying ZrO$_2$. The resistivities of Mo were 35$\mu$Ω$.$cm∼ 75$\mu$Ω$.$cm. These values are lower than those of heavily doped polysilicon. Based on these measurements, it can be concluded that Mo metal gate with ZrO$_2$ gate insulator is an excellent gate material for PMOS.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.202.2-202.2
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• 2013

Ti2O3 is known as a typical Mott insulator with a transition temperature of near $200^{\circ}C$. Unlike VO2, Ti2O3 does not have a structural phase transition near the metal-insulator-transition (MIT) temperature. We investigated the temperature-dependent thermal vibration change using temperature-dependent x-ray absorption fine structure (XAFS) at Ti K-edge in the temperature range of 300~600 K. Ti2O3 powder and films were synthesized using thermal chemical vapor deposition (CVD) at $800{\sim}900^{\circ}C$. X-ray diffraction measurements show a single phased Ti2O3 at room temperature. XAFS confirmed no structural phase transition in the temperature of 300~600 K. A small but distinguishable structural disorder change was observed near the transition temperature. We will discuss the MIT behavior with the change of structural disorder.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.6
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• pp.642-650
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• 2016

One of the most feasible solution for reducing the excessive energy consumption and carbon dioxide emission is usage of more efficient fuel such as hydrogen. As is well known, there are three viable technologies for storing hydrogen fuel: compressed gas, metal hydride absorption, and cryogenic liquid. In these technologies, the storage for liquid hydrogen has better energy density by weight than other storage methods. However, the cryogenic liquid storage has a significant disadvantage of boiling losses. That is, high performance of thermal insulation systems must be studied for reducing the boiling losses. This paper presents an experimental study on the effective thermal conductivities of the composite layered insulation with aerogel blankets($Cryogel^{(R)}$ Z and $Pyrogel^{(R)}$ XT-E) and Multi-layer insulation(MLI). The aerogel blankets are known as high porous materials and the good insulators within a soft vacuum range($10^{-3}{\sim}1$ Torr). Also, MLI is known as the best insulator within a high vacuum range(<$10^{-6}{\sim}10^{-3}$ Torr). A vertical axial cryogenic experimental apparatus was designed to investigate the thermal performance of the composite layered insulators under cryogenic conditions as well as consist of a cold mass tank, a heat absorber, annular vacuum space, and an insulators space. The composite insulators were laminated in the insulator space that height was 50 mm. In this study, the effective thermal conductivities of the materials were evaluated by measuring boil-off rate of liquid nitrogen and liquid argon in the cold mass tank.