• 한국진공학회지
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• 제11권4호
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• pp.230-234
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• 2002

고온 급속 열처리를 행한 $LiNbO_3Si$/(100) 구조를 가지고 여러 가지 전극을 사용하여 금속/강유전체/반도체 커패시터를 제작하였으며, 제작한 커패시터의 비휘발성 메모리 응용 가능성을 확인하였다. MFS 커패시터의 C-V 특성 곡선에서는 LiNbO$_3$박막의 강유전성으로 인한 히스테리시스 특성이 관측되었으며, 1 MHz C-V 특성 곡선의 축적 영역에서 산출한 비유전율은 약 25 이었다. Pt 전극을 사용하여 제작한 커패시터에서는 인가 전계 500 kV/cm 범위에서 $1\times10^{-8}$ A/cm 이하의 우수한 누설전류 특성이 나타났다. midgap 부근에서의 계면 준위 밀도는 약 $10^{11}\textrm{cm}^2$.eV 이었으며, 잔류분극 값은 약 1.2 $\muC/\textrm{cm}^2$ 였다. Pt 전극과 A1 전극 모두 500 kHz 주파수의 바이폴러 펄스를 인가하면서 측정한 피로 특성에서 $10^{10}$ cycle 까지 측정된 잔류 분극 값이 초기 값과 같았다.

• 한국결정성장학회지
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• 제13권6호
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• pp.272-278
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• 2003

초음파 분무에 의한 유기금속 화학증착법 (MOCVD)법으로 $Bi_4Ti_3O_{12}$(BIT)와 Bi와 Ti 대신에 La과 V을 동시에 치환시킨 ($Bi_{3.75}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV)박막을 ITO/glass 기판 위에 증착하였다. 산소 분위기에서 30분 동안 증착한 후, RTA 방식의 직접삽입법으로 열처리를 하였다. 박막은 페로브스카이트상 생성 온도, 미세구조, 전기적 성질에 관해서 조사하였다. XRD(X-Ray diffraction) 측정결과 BLTV 박막의 페로브스카이트상 생성 온도는 약 $600^{\circ}C$로써 BIT의 $650^{\circ}C$보다 더 낮았다. BLTV 박막의 누설전류는 인가전압 1 V에서 $1.52\times10^{-19}$ A/cm^2$로 측정되었다 또한, $650^{\circ}C$에서 증착했을 경우 잔류 분극값이 $5.6\mu$C/$cm^2$, 항전계값 96.5 kV/cm으로 명확한 강유전성을 보이고 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• 전자공학회논문지D
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• 제36D권11호
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• pp.27-32
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• 1999

고온 열처리 시킨 $LiNbO_3/Si$(100) 구조를 이용한 MFS 디바이스를 제작하여 비휘발성 메모리 동작을 확인하였다. 제작한 트랜지스터의 선형영역에서 산출한 전계효과 이동도와 상호 컨덕턴스는 각각 약 $600cm^2/Vs$ 및 0.16mS/mm 이었다. 0.5V의 게이트 전압(즉, read 전압)에서 측정한 드레인 전류의 온/오프 비는 $10^4$배 이상이었다. 분극반전에 사용한 전압은 ${\pm}3V$ 이하로 매우 낮아 이는 저소비전력용 집적회로에 적용시키기에 기대가 된다. 세게 도핑시킨 반도체위에 제작한 MFS 커패시터는 500kHz의 바이폴라 전압펄스(peak-to-peak 6V, 50% duty cycle) 측정으로 $10^{10}$ cycle 까지도 분극의 열화현상이 없는 양호한 특성을 얻었다.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2010년 춘계학술대회논문집
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• pp.551-555
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• 2010

Electrowetting is a versatile tool to handle tiny droplets and forms a backbone of digital microfluidics. Numerical analysis is necessary to fully understand the dynamics of electrowetting, especially in designing electrowetting-based devices, such as liquid lenses and reflective displays. We developed a numerical method to analyze the general contact-line problems, incorporating dynamic contact angle models. The method is based on the conservative level set method to capture the interface of two fluids without loss of mass. We applied the method to the analysis of spreading process of a sessile droplet for step input voltages and oscillation of the droplet for alternating input voltages in electrowetting. The result was compared with experimental data. It is shown that contact line friction significantly affects the contact line motion and the oscillation amplitude. The pinning process of contact line was well represented by including the hysteresis effect in the contact angle models. In level set method, in the mean time, material properties are made to change smoothly across an interface of two materials with different properties by introducing an interpolation or smoothing scheme. So far, the weighted arithmetic mean (WAM) method has been exclusively adopted in level set method, without complete assessment for its validity. We viscosity, thermal conductivity, electrical conductivity, and permittivity, can be an alternative. I.e., the WHM gives more accurate results than the WAM method in certain circumstances. The interpolation scheme should be selected considering various characteristics including type of property, ratio of property of two fluids, geometry of interface, and so on.

• 센서학회지
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• 제13권2호
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• 한국세라믹학회지
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• 제25권3호
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• pp.217-224
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• 1988

Alkoxide 법으로 합성한 알루미나의 동공 구조를 BET 법으로 구한 흡 탈착 등온선의 hysteresis loop와 동공 분포로부터 고찰하였다. 알루미나는 aluminum isopropoxide를 화학량의 물로 가수분해하여 제조하였고, 가수분해 온도는 3$^{\circ}C$와 8$0^{\circ}C$에서 수행하였다. 이어 20$0^{\circ}C$부터 50$0^{\circ}C$까지 단계적으로 승온시키며 일정시간 열처리하였다. 3$^{\circ}C$ 가수분해 시료의 동공부피는 열처리 온도에 비례하여 증가하였으며, 동공크기는 쌍입분포(twin peaked pore size distribution)형으로 나타났다. 그러나 8$0^{\circ}C$ 가수분해 시료는 열처리에 의하여 동공부피가 감소하고, 동공크기는 단입분포(single peaked pore size distribution)로 나타났다. 이러한 관찰 결과로부터 전자의 동공형태는 slit형, 후자는 ink-bottle형을 하고 있는 것으로 추정되었다. 이와 같이 가수분해 온도는 동공 형태를 결정하는 중요한 인자일 뿐만 아니라, 층상 알루미나의 구조수 일탈 거동을 결정하는데 중요하다. 열처리 효과는 단지 최종 제품의 동공 분포를 결정하는데 영향을 주고 있는 것으로 해석되었다.

• KSBB Journal
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• 제29권4호
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• pp.303-306
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• 2014

Antifreeze proteins (AFP) inhibit ice growth to permit the survival of polar organisms in the cold environments. The recombinant AFP from an Antarctic bacterium, Flavobacterium frigoris PS1, FfIBP (Flavobacterium frigoris ice-binding protein), was produced using Pichia pastoris expression system. The optimum fermentation temperature ($30^{\circ}C$) and pH (5) for FfIBP production were determined using a fed-batch culture system. The maximal cell density and purified FfIBP were 112 g/L and 70 mg/L, respectively. The thermal hysteresis (TH) activity (0.85) of FfIBP obtained using a glycerol-methanol fed-batch culture system was 2-fold higher than that of the LeIBP (Leucosporidium ice-binding protein). This work allows for large-scale production of FfIBP, which could be extended to further application studies using recombinant AFPs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• 센서학회지
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• 제25권5호
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• pp.344-348
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• 2016

We developed a 2-channel fiber-optic temperature sensor (FOTS) using a temperature sensing probe, a fiber-optic coupler, transmitting optical fiber, and an optical time domain reflectometer (OTDR). The temperature sensing probe is divided into a sensing probe and a reference probe for accurate thermometry. A sensing probe is composed of a silicon oil, a FC terminator, a brass pipe, and a singlemode optical fiber and the structure of a reference probe is identical with that of the sensing probe excluding a silicon oil. In this study, we measured the modified optical powers of the light signals reflected from the temperature sensing probe placed inside of the water with a thermal variation from 5 to $70^{\circ}C$. Although the optical power of the reference probe was constant regardless of the temperature change, the optical power of the sensing probe decreased linearly as the temperature increased. As experimental results, the FOTS using a subtraction method showed a small difference (i.e., hysteresis) in its response due to heating and cooling. The reversibility and reproducibility of the FOTS were also evaluated.