• Polymer(Korea)
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• v.29 no.5
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• pp.486-492
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• 2005

Into a no-conjugated polymer chain we have introduced side chains with a styrene-linked triphenylamine segment as a $\pi-electron$ donor, styrene-]inked aminobenzaldehyde segment as a tunable reactive -CHO group, and PM (4-(dicyanomethylene)-2-(tert-butyl)-4H-pyran) moiety as a $\pi-electron$ acceptor for red emitting materials. The thermal stability and the optical properties of the statistical copolymers have been studied. All the polymers were electrochemically active and showed electroluminescent emission at around 700nm. The EL device of P5-PM based on the sturcture of $ITO/PPV/polymer/BCP/Alq_3/Al$ showed a maximum brightness of $120cd/m^2\;at\;50mA/cm^2$ with an external quantum efficiency of $0.67\%$. It was possible to enhance the external quantum efficiency by balancing the charge recombination. A red-emitting polymer with high external quantum efficiency was developed by incorporating bifunctionality.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.12.1-12.1
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• 2011

최근 p-type 결정질 실리콘 태양전지의 광열화현상(light induced degradation)에 대한 관심이 높아지면서, 이를 해결하기 위한 많은 연구들이 수행되고 있다. 본 연구에서는 LID 현상을 원천적으로 제거 할수 있는 n-type 기판을 이용하여, 상업적으로 양산화 가능한 공정을 도입하고, 시뮬레이션을 통하여 고효율화 방안을 제시하고자 한다. 이를 위해 일반적인 p-type 결정질 실리콘 태양전지 제작 공정을 사용하여 알루미늄이 도핑된 후면 에미터 구조의 n-type 결정질 실리콘 태양전지를 제작하였으며, PC1D 시뮬레이션을 통해서 n+/n/p+구조의 n-type 결정질 실리콘 태양전지의 에너지 변환 효율 향상을 위한 방안을 제시하였다.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.293-296
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• 2003

We report on the fabrication and field emission of carbon nanotube field emitters for mass spectrometer. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by thermal chemical vapour deposition as cathodes, Electrons emitted from a CNT are to ionize some sample molecules. We have successfully attained patterned carbon nanotubes grown on two-dimensional 0.7 mm by 0.7 mm Ni square blocks on Si. The emission characteristics show that the field emission initiates at 200 V.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.1
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• pp.10-14
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• 2004

A large area electron beam generator has been developed for industrial applications, for example, waste water cleaning, flue gas treatment, and food pasteurization. The operational principle is based on the emission of secondary electrons from the cathode when ions in the plasma contact the cathode, which are accelerated toward the exit window by the gradient of the electric potential. Conventional electron beam generators require an electron beam scanning mechanism because a small area thermal electron emitter is used. The electron beam of the large area electron beam generator does not need to be scanned over target material because the beam area is considerable. We have fabricated a large area electron beam generator with peak energy of 200keV, and a beam diameter of 200mm. The electron beam current has been investigated as a function of accelerating voltage and distance from the extracting window while its radial distribution in front of the extracting window has been also measured.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.41-50
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• 1993

This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1470-1473
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• 2005

We proposed new triode-type Field Emitter Arays using Carbon NanoTubes(CNT-FEAs) as electron emission sources at low electric fields. The CNTs were selectively grown on the patterned catalyst layer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). In this structure, gate electrodes are located underneath the cathode electrodes and extracted gate is surrounded by CNT emitters. Furthermore, in order to control density of CNTs, we investigated effect of using rapid thermal annealing (RTA).

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.115-120
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• 2007

Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.89-92
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• 2001

In this paper, a simple low-power CMOS current reference circuit is proposed. The reference circuit includes parasitic pnp BJTs and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a base-to-emitter voltage. The designed circuit has been simulated using a 0.25${\mu}{\textrm}{m}$ n-well CMOS process parameters. The simulation results show that the reference current is 34.96$mutextrm{A}$$\pm$0.04$mutextrm{A}$ in the temperature range of -2$0^{\circ}C$ to 12$0^{\circ}C$ The reference current varies less than 0.6% when the power supply voltage changes from 2.5V to 3.5V For $V_{DD=5V}$ and T=3$0^{\circ}C$ the power consumption is 520㎼ during normal operation but reduces to 0.l㎻ during power-down mode.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.21-24
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• 2008

Properties of carbon nano fiber (CNF) as field emitters were described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD). Field emitters mixed with organic binders, conductive materials and were prepared by screen-printing process. In order to increase field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as 2.1 $V/{\mu}m$ and current density was as large as 0.15 $mA/cm^2$ of 4.2 $V/{\mu}m$ with electric field. Through the results. we propose that CNFs are suitable for application of electron emitters in Field Emission Devices.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.57-62
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• 1997

Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.