• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1174-1176
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• 1993

Morphology of low density polyethylene(LDPE) such as the degree of crystallinity changes with thermal history etc. In order to clarify the effects of morphological changes on electrical breakdown, we studied direct current and impulse breakdown phenomena of LDPE films heat-treated at 100[$^{\circ}C$] for 1[H] in silicone oil and subsequently cooling to various ways. The degree of crystallinity was estimated by the infra red absorption and X-ray diffraction measurements for the specimens of slowly cooled, cooled in water, original, and cooled in liquid nitrogen gas. As the result, we obtained that the first, second, third, and fourth was slowly cooled of 70.23[%], cooled in water of 61.6[%], original specimen of 56.75[%], and cooled in liquid nitrogen gas of 34.7[%] respectively. The crystalline size and distribution of specimens were researched by Differential scanning calolimeter measurements.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.349-352
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• 2007

It is impossible to database(DB) the patterns of cable events and cause analysis of faulted cable because the product liability(PL) law have been enforced in Korea, since 2002. In additions, simulation and pattern of cable events are needed for DB system under accelerated deterioration. In this paper, we tested for resistance to nicking of cable below the 22.9kV class due to thermal stresses. This method of exam is following IEC 60811-3-1(Common test methods for insulating and sheathing materials of electric cables). First of all, set the cable in the thermal stress instrument, temperature changed from -20 degree to 120 degree. After thermal stress, we observed a surface crack of cable through microscope and carried out AC withstand voltage test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.50-53
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• 2001

In this study, gate leakage current mechanism has been analyzed for GaAs MESFET with different temperatures ranging from 27$^{\circ}C$ to 300$^{\circ}C$ . It is expected that the thermionic and field emission at the MS contact will dominate the current flow. Thermal cycle is applied to test the reliability of the device. From the results, it is proved that thermal stress gradually increases the gate leakage current at the same bias conditions and leads to the breakdown and failure mechanism which is critical in the field equipment. Finally the gate contact under the repeated thermal shock has been tested to check the quality of Schottky barrier and the current will be expressed in the analytical from to associate with the electrical characteristics of the device.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.24-26
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• 1988

The electrical properties of thin nitrided thermal oxides prepared by rapid thermal nitridation(RTN) have been studied. The flatband voltages were calculated using C-V measurement and found to vary as nitridation time and temperature. After nitridation an increase in the fixed oxide charge density was always observed, but the distribution of it as a function of annealing time was found to be random. The breakdown voltages were measured using curve tracer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1358-1366
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1350-1357
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.4
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• pp.146-153
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• 2007

The detailed chemistry with reaction mechanism of GRI 2.11, which consists of 49 species and 279 elementary reactions, have been numerically conducted to investigate the flame structure and NO emission characteristics in a non-premixed counterflow flame of blended fuel of $H_2/CO_2/Ar$. The combination of $H_2,\;CO_2$, and Ar as fuel is selected to clearly display the contribution of hydrocarbon products to flame structure and NO emission characteristics due to the breakdown of $CO_2$. Radiative heat loss term is involved to correctly describe the flame dynamics especially at low strain rates. All mechanisms including thermal, $NO_2,\;N_2O$, and Fenimore are also taken into account to separately evaluate the effects of $CO_2$ addition on NO emission characteristics. The increase of added $CO_2$ quantity causes flame temperature to fall since at high strain rates diluent effect is prevailing and at low strain rates the breakdown of $CO_2$ produces relatively populous hydrocarbon products and thus the existence of hydrocarbon products inhibits chain branching. It is also found that the ratio of the contribution by Fenimore mechanism to that by thermal mechanism in the total mole production rate becomes much larger with increase in the $CO_2$ quantity and strain rate, even though the absolute quantity of NO production is deceased. Consequently, as strain rate and $CO_2$ quantity increase, NO production by Fenimore mechanism is remarkably augmented.

• Journal of IKEEE
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• v.19 no.4
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• pp.491-499
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• 2015

Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width.