Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of MOS Devices by Rapid Thermal Nitridation(RTN)

RTN에 의해 제작된 MOS소자의 전기적 특성

  • Chang, Eui-Gu (Department of Electrical Engineering, Chung-Ang University) ;
  • Choi, Won-Bun (Department of Electrical Engineering, Chung-Ang University) ;
  • Lee, Cheol-In (Department of Electrical Engineering, Chung-Ang University)
  • Published : 1988.05.27
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Abstract

The electrical properties of thin nitrided thermal oxides prepared by rapid thermal nitridation(RTN) have been studied. The flatband voltages were calculated using C-V measurement and found to vary as nitridation time and temperature. After nitridation an increase in the fixed oxide charge density was always observed, but the distribution of it as a function of annealing time was found to be random. The breakdown voltages were measured using curve tracer.

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