• Journal of Magnetics
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• 제13권4호
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• pp.124-127
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• 2008

The magnetic and electronic properties of Ni impurity in bcc Fe ($Ni_1Fe_{26}$) are investigated using the full potential linearized augmented plane wave (FLAPW) method based the generalized gradient approximation (GGA). We found that the Ni impurity in bcc Fe increases both the lattice constant and the magnetic moment of bcc Fe. The calculated equilibrium lattice constant of $Ni_1Fe_{26}$ in the ferromagnetic state was 2.84 A, which is slightly larger than that of bcc Fe (2.83 ${\AA}$). The averaged magnetic moment per atom of $Ni_1Fe_{26}$ unit cell was calculated to be $2.24{\mu}_B$, which is greater than that of bcc Fe (2.17 ${\mu}_B$). The enhancement of magnetic moment of $Ni_1Fe_{26}$ is mainly contributed by the nearest neighbor Fe atom of Ni, i.e., Fe1, and this can be explained by the spin flip of Fe1 d states. The density of states shows that Ni impurity forms a virtual bound state (VBS), which is contributed by Ni $e_{g{\downarrow}}$ states. We suggest that the VBS caused by the Ni impurity is responsible for the spin flip of Fe1 d states.

• 한국결정성장학회지
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• 제4권4호
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• pp.388-394
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• 1994

단결정 Hg(1-x)Cd(x)Te (MCT,X=0,21)가 특수 제작된 고압로에서 Traveling Heater Method(THM)으로 성장되었다.X-선 회절 실험으로 MCT는 입방ZnS 구조임을 확인하였다. 측정된 격자상수는 $6.464 {\AA}$이엇으며, J.C.Wooley가 측정한 값과 비교하여 얻은 MCT의 성분비는 0.21이었다.MCT의 결정 구조를 분석하기 위하여 X-선 회절 강도로 부터 전자 밀도를 계산하였다.전자 분포 밀도도로 부터 MCT는 주로 공유 결합을 하고 있으며, 인접 원자들 상에는 사면체 구조를 이루고 있음을 알 수 있다. 격자 상수가 Vegard line으로 부터 편이 되는 원인은 성분비x가 증가될 때 원자간 거리 변화의 비선형적 증가로 판단되며, 이것은 결합 에너지와 관련될 것으로 추축된다.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.879-884
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• 2001

In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.640-647
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• 1995

In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.

• Metals and materials international
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• 제24권6호
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• pp.1285-1292
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• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

• 한국세라믹학회지
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• 제45권11호
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• pp.681-687
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• 2008

The sintering and electrical properties of the hydrothermal PSZT powders obtained by substituting 4, 6 and 8mol% Sr for Pb in PZT lattice structure were investigated. The lattice constant and particle size decreased in proportion to a quantity of Sr. The sintering properties of PSZT powders showed $7.754g/cm^3$ of sintered density and $4{\mu}m$ of grain size at sintering temperature of $1250^{\circ}C$. Curie temperature lowered gradually from $363.6^{\circ}C\;to\;319.2^{\circ}C$ and relative dielectric constants increased rapidly by a quantity of Sr. In comparison to PZT, moreover, the quality factor of PSZT was increased more than three times with increase of Sr mole ratio, and piezoelectric constant $(d_{31}\;and\;g_{31})$ was decreased. It was found that dielectric loss of PSZT was decreased by 0.574% which was half of PZT.

• 한국세라믹학회지
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• 제25권6호
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• pp.639-644
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• 1988

The physical and dielectric properties of complex perovskite compound Sr(Mg1/3Nb1/3)O3-Ba(Mg1/3Nb2/3)O3-Ba(Mg1/3Ta2/3)O3(BMT) system were investigated as a function of composition. As the mole ratio of BMN was increased, lattice parameter ratio c/a was slightly increased, and density was increased in SMN-BMN system. However, in BMN-BMT system, lattice parameter ratio c/a and density were decreased with increasing the mole ratio of BMN. Dielectric constant, dielectric loss at $25^{\circ}C$ and 100kHz, and temperature coefficient of resonant frequency, the dependence of temperature in capacitance were increased with increasing the mole ratio of BMN in SMN-BMN-BMT system. These result can be explained according to the degree of order=disorder and dielectric constant.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Nuclear Engineering and Technology
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• 제4권2호
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• pp.132-136
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• 1972

고온 X-선 회절 방법으로 0.05 w/o TiO$_2$첨가로 인한 $UO_2$활성화 소결기구에 미치는 영 향을 조사하였다. 120$0^{\circ}C$에서 TiO$_2$를 첨가한 $UO_2$와 첨가하지 않은 $UO_2$격자상수의 열팽창은 상온에서의 격자상수 보다 각각 1.448%와 1.354% 더 컸으며 TiO$_2$를 첨가한 경우가 약0.094% 더 컸었다. 또한 0.05 w/o TiO$_2$를 첨가한 $UO_2$Pellet의 108$0^{\circ}C$에서의 격자상수는 120$0^{\circ}C$에서의 $UO_2$격자상수와 동일하였다. 이 온도차이는 $UO_2$소결시 0.05w/o TiO$_2$의 첨가로 인하여 강하된 소결온도와 잘 일치된다. 이와같이 TiO$_2$의 미량첨가가 고온에서 $UO_2$격자상수의 열팽창을 증가시켜 $UO_2$의 화산을 촉진시킴으로서 활성화 소결에 영향을 준다고 생각된다.