• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.5 no.5
• /
• pp.458-461
• /
• 2004

In order to improve the adhesion properties of copper, MPS(3-mercaptopropyltrimethoxysilane) organic film were employed. The plasma pretreatment in pure He or $He/O_{2}$ mixed gas environment greatly increased adhesion force. Adhesion force was measured by scratch test with nano indenter. Microstructures and surface roughness were observed with scanning electron microscope(SEM). The characteristics of MPS layer for pretreatment were studied with flourier transform infrared spectroscope(FT-IR) and contact angle tester. The heighest adhesion was achieved in the specimen pretreated with mixed plasma and NPS coating, which was 56mN. Other specimen showed lower value by $20{\%}$ to $30{\%}$. The roughness of substrate was not affected by the bonding strength of copper plating.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.128-128
• /
• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Journal of Welding and Joining
• /
• v.18 no.6
• /
• pp.74-82
• /
• 2000

The fluxless wetting properties of UBM-coated Si-wafer to the binary lead-free solders(Sn-Ag, Sn-Sb, Sjn-In, Sn0Bi) were estimated by wetting balance method. With the new wettability indices from the wetting curves of one side coated specimen, the wetting property estimation of UBM-coated Si-wafer was possible. For UBM of Si-chip, Au/Cu/Cr UBm was better than au/Ni/TI in the point of wetting time/ At general reflow process temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) was better than that of low melting point one(Sn-Bi, Sn-In). The contact angle of the one side coated Si-plate to the solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.3
• /
• pp.196-203
• /
• 2004

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2004.11a
• /
• pp.90-98
• /
• 2004

Nano/micro-scale studies on friction properties were conducted on Si (100) and three self-assembled monolayers (SAMs) (PFOTC, DMDM, DPDM) coated on Si-wafer by chemical vapor deposition technique. Experiments were conducted at ambient temperature $(24{\pm}1^{\circ}C)$ and humidity $(45{\pm}5\%)$. Nano-friction was evaluated using Atomic Force Microscopy (AFM) in the range of 0-40nN normal loads. In both Si-wafer and SAMs, friction increased linearly as a function of applied normal load. Results showed that friction was affected by the inherent adhesion in Si-wafer, and in the case of SAMs the physical/chemical structures had a major influence. Coefficient of friction of these test samples was also evaluated at the micro-scale using a micro-tribotester. It was observed that SAMs had superior frictional property due to their low interfacial energies. In order to study of the effect of contact area on friction coefficient at the micro-scale, friction was measured for Si-wafer and DPDM against Soda Lime balls (Duke Scientific Corporation) of different radii 0.25 mm, 0.5 mm and 1 mm at different applied normal loads $(1500,\;3000\;and\;4800{\mu}N)$. Results showed that Si-wafer had higher friction coefficient than DPDM. Furthermore, unlike that in the case of DPDM, friction was severely influenced by wear in the case of Si-wafer. SEM evidences showed that solid-solid adhesion to be the wear mechanism in Si-wafer.

• Proceedings of the KAIS Fall Conference
• /
• 2004.06a
• /
• pp.50-53
• /
• 2004

본 논문에서는 Si wafer와 Cu사이의 밀착력을 증가시키기 위해 Si wafer전처리 후 plasma와 SAMs처리 방법에 의한 Cu도금의 형성에 관한 방법을 설명하였다. Si wafer를 Piranha solution과 $0.5\%$ HF처리 후 유기박막인 SAMs과 plasma를 이용하는 방법으로 wafer와 Cu층 사이의 밀착력을 증가시켰다. 도금층의 밀착력은 scratch test 로 측정하였으며, AEM을 이용해 시편에 형성된 패턴의 형태를 관찰하고 SEM과 EDS를 이용해 시편의 조직을 관찰하였다. 그 결과 Si wafer를 O2, He, SAMs를 혼합처리 했을 때 밀착성이 가장 우수하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.2
• /
• pp.55-62
• /
• 2000

The wetting balance test was performed in an attempt to estimate the wetting properties of the UBM-coated Si-wafer on one side to the Sn-Pb solder. The wetting curves of the one and both side-coated UBM layers had the similar shape and the parameters characterizing the curve shape showed the similar transition tendency to the temperature. The wetting property estimation was possible with the new wettability indices from the wetting curves of one side-coated specimen; $F_{min}$, $F_{s}t_{s}$ and $t_s$. For UBM of Si-chip, Au/Cu/Cr UBM was better than Au/Ni/Ti in the point of wetting time. The contact angle of the one side coated Si-plate to the Sn-Pb solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• Korean Journal of Materials Research
• /
• v.32 no.9
• /
• pp.396-402
• /
• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.374-375
• /
• 2006

This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• Journal of Mechanical Science and Technology
• /
• v.20 no.6
• /
• pp.738-747
• /
• 2006

The friction behaviour of Si-wafer, diamond-like carbon (DLC) and two self-assembled monolayers (SAMs) namely dimethyldichlorosilane (DMDC) and diphenyl-dichlorosilane (DPDC) coated on Si-wafer was studied under loading conditions in milli-newton (mN) range. Experiments were performed using a ball-on-flat type reciprocating micro-tribo tester. Glass balls with various radii 0.25 mm, 0.5 mm and 1 mm were used. The applied normal load was in the range of 1.5 mN to 4.8 mN. Results showed that the friction increased with the applied normal load in the case of all the test materials. It was also observed that friction was affected by the ball size. Friction increased with the increase in the ball size in the case of Si-wafer. The SAMs also showed a similar trend, but had lower values of friction than those of Si-wafer In-terestingly, for DLC it was observed that friction decreased with the increase in the ball size. This distinct difference in the behavior of friction in DLC was attributed to the difference in the operating mechanism. It was observed that Si-wafer and DLC exhibited wear, whereas wear was absent in the SAMs. Observations showed that solid-solid adhesion was dominant in Si-wafer, while plowing in DLC. The wear in these two materials significantly Influenced their friction. In the case of SAMs their friction behaviour was largely influenced by the nature of their molecular chains.