Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.128-128
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- 2010
Effect of N2/Ar flow rates on Si wafer surface roughness during high speed chemical dry thinning
- Heo, W. (School of Advanced Materials Science & Engineering, Center for Advanced Plasma Surface Technology, and Center for Human Interface Nanotechnology, Sungkyunkwan University) ;
- Lee, N.E. (School of Advanced Materials Science & Engineering, Center for Advanced Plasma Surface Technology, and Center for Human Interface Nanotechnology, Sungkyunkwan University)
- Published : 2010.08.18
Abstract
In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as
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