• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.576-580
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• 2013

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.335-339
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• 2018

The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.73-84
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• 2012

테라헤르츠파는 0.1~10THz 대역의 미개발 주파수 자원으로 전자기파 스펙트럼에서 적외선과 밀리미터파의 중간 영역에 위치한다. 전파의 투과성과 광파의 직진성을 동시에 가지고 있어 독특한 물리적 특성을 보유한 테라헤르츠파는 THz 소자, 분광, 영상 기술 등의 기초 과학과 의공학, 보안, 환경/우주, 정보통신 등의 응용 과학 분야에서 이미 그 중요성이 검증되어 향후 폭넓은 산업 응용으로 다양한 분야에서 새로운 형태의 시장이 형성될 것으로 기대된다. 이러한 테라헤르츠파 기술의 사회, 경제적 파급력을 극대화하기 위해서는 테라헤르츠 대역 소자의 특성을 향상시키고, 크기와 가격을 낮추는 것이 매우 중요하다. 본고에서는 크기와 가격을 낮출 수 있는 포토닉스 기반의 테라헤르츠 가변형 연속파 신호원 및 검출기 기술과 이를 기반으로 구현 가능한 응용 기술 동향에 대하여 기술하였다.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.87-103
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• 2008

In recent years, the field of THz photonics based on THz pulse technology has gained tremendous, world-wide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of THz photonics. This fact is supported by the observation of the significant increase in the number of papers on THz pulse technology presented in renowned international journals and conferences. The subject that is interesting for the THz application is the development of THz pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as THz photoconductive antennas, optical rectification, difference frequency geneneration with quasi-phase matching structures, electro-optic sampling, high speed real time measurements, THz transmission lines, and other various waveguide structures.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.559-568
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• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.