• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.317-322
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• 2010

This paper reports the fabrication and characterization of surface micromachined poly 3C-SiC capacitive pressure sensors on silicon wafer operable in touch mode and normal mode for high temperature applications. FEM(finite elements method) simulation has been performed to verify the analytical mode. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal and the poly 3C-SiC layer. Measurements have been performed in a temperature range from $25^{\circ}C$ to $500^{\circ}C$. Fabrication process of designed poly 3C-SiC touch mode capacitive pressure sensor was optimized and would be applicable to capacitive pressure sensors that are required high precision and sensitivity at high pressure and temperature.

• 센서학회지
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• 제14권3호
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• pp.150-155
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• 2005

We propose a newly developed automobile sensor monitoring system incorporated with a tire pressure monitoring sensor(TPMS). The RF-transmitter based on a tire pressure sensor, sends a frame data about measured tire-pressure to RF receiver. And the various sensing signals based on sensors such as fuel-level sensor, engine oil level sensor and temperature sensors, are converted into 10-bit digital data. The microprocessor displays converting data such as tire pressure, trip distance, fuel quantity, coolant temperature and car-room temperature, on LCD panel. The proposed system can be successfully adapted to monitoring of the tire pressure and various automobile sensors.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.587-590
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• 2000

This paper presents the characteristics of metal thin-film pressure sensors. The micro pressure sensors consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si wafer an aluminium interconnection layer. The fabricated micro pressure sensors shows a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.16~1.21 mV/V.kgf/$\textrm{cm}^2$ in the temperature range of 25~l0$0^{\circ}C$ and the maximum non-linearity is 0.21 %FS.

• 한국방재학회 논문집
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• 제8권6호
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• pp.1-5
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• 2008

피복이 없는 FBG센서는 내구성이 매우 약하기 때문에 FBG센서 주위의 피복이 없이는, 많은 변수가 존재하는 실제 자연환경에서의 정확한 데이터수집이 어렵다. Steel sleeve packaged FBG 변형률 센서는 토목공학에서 널리 사용되고 있는 센서 중 하나이다. 변형률과 온도가 동시에 측정되는 FBG센서의 도입 이후로, 변형률과 온도의 정확한 보정은 필수적인 과정이 되었다. 이 논문에서는 FBG의 변형률과 온도의 측정 원리에 기초하여 steel sleeve packaged FBG센서의 온도보정 기술을 도출하였다. 그리고 두개의 FBG센서를 이용한 콘크리트 초기재령의 건조수축 실험을 통해 온도보정의 실행 가능성을 확인하였다.

• 한국세라믹학회지
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• 제30권10호
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• pp.866-870
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• 1993

For VO2-based sensors applicable to temperature measurements and optical disk materials by the nature of semiconductor to metal transition, the crystallinity and temperature vs. resistance characteristics were investigated as a function of the heat treatment temperature. The bead-type sensors were prepared through typical sensor fabrication processing and heat-treated at 40$0^{\circ}C$, 50$0^{\circ}C$, and $600^{\circ}C$, respectively, for 30 minutes in H2 gas atmosphere. As results of the temperature vs. resistance measurements, the electrical resistance in the phase transition range was decreased by 102 order for the VO2 sensor and by 103 order for the V71P11Sra18 system. It was estimated that the hysteresis, temperature vs. resistance, and current vs. voltage characteristics of the V71P11Sr18 system could be utilized for commericialization as a temperature sensor.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 1998년도 추계 학술발표회 논문집
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• pp.150-160
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• 1998

Measuring temperature with ultrasonic wave apparatus is desirable in the case of both below 300$0^{\circ}C$ and ideal gas because of the fact that the temperature of gas is the function of only sound velocity. In this study, being used a heatable wind channel and a blower, the variation of temperature is observed in accordance with diverse flow rate(air velocity). The frequency modulation method is used to measure the temperature which is varying in hot air flow till 10$0^{\circ}C$. The length changed in the position of ultrasonic sensors is considered. Also, the effects of air velocity at the same temperature and various facing angles of ultrasonic sensors are considered. As a result of this study, it has been found that the temperature in gas flow is correctly measured regardless of both the distance of ultrasonic sensors and the variation of air velocity, and that there is just a little influence of facing angles.

• 한국음향학회지
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• 제38권2호
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• pp.214-221
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• 2019

본 논문은 수중음향센서의 수온 변화에 따른 음향 수신 특성 변화를 이론적, 실험적 방법으로 확인하였다. 반사판 및 배플 구성에 따라 중 저주파용 및 고주파용의 두 가지 음향센서를 설계하여 $-2^{\circ}C{\sim}35^{\circ}C$의 온도범위에서 온도 변화에 따른 음향 수신 특성을 각각 분석하였다. 음향센서 주요 구성 소재의 온도별 물성치 변화에 대한 영향성을 분석하기 위하여 압전세라믹, 몰딩 및 배플 시편의 온도별 물성치 변화를 측정하였고, 측정된 물성치를 활용하여 온도별 수신감도(Receiving Voltage Sensitivity, RVS) 변화를 유한요소해석 기법을 통하여 해석하였다. 제작된 두 가지 음향센서의 온도별 수신감도 특성을 측정하기 위하여, 내부 수온 및 수압 조정이 가능한 압력 챔버에 음향센서를 설치하고 챔버 내부 수온을 변화시켜가며 수신감도를 측정하였다. 측정 및 분석결과 수중센서의 온도별 수신감도 특성은 몰딩 재료의 음속변화에 주도적으로 영향을 받는 것을 확인하였다.

• 센서학회지
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• 제26권2호
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• pp.141-147
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• 2017

A pressure sensor in pulse measurement system is a core component for precisely measuring the pulse waveform of radial artery. A pulse sensor signal that measures the pulse wave in contact with the skin is affected by the temperature difference between the ambient temperature and skin surface. In this study, we found experimentally that the signal changes of the pressure sensors and a temperature sensor were caused by the temperature of the wrist surface while the pressure sensor was contacted on the skin surface for measuring pulse wave. To observe the signal change of the pulse sensor caused by temperature increase on sensor surface, Peltier device that can be kept at a set temperature was used. As the temperature of Peltier device was kept at $35^{\circ}C$ (the maximum wrist temperature), the device was put on the pulse sensor surface. The temperature and pressure signals were obtained simultaneously from a temperature sensor and six pressure sensors embedded in the pulse sensor. As a result of signal analysis, the sensor pressure was decreased during temperature increase of pulse sensor surface. In addition, the signal difference ratio of pressure and temperature sensors with respect to thickness of cover layer in pulse sensor was increased exponentially. Therefore, the signal of pressure sensor was modified by the compensation equation derived by the temperature sensor signal. We suggested that the thickness of cover layer in pulse sensor should be designed considering the skin surface temperature.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.169-173
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• 1997

In this paper, auto measuring system for evaluating sensing reliability of infrared temperature sensors is developed. A developed system is composed of temperature controller, measuring sysytem and operating S/W. A constant temperature control of a chamber is accomplished by multi-heater using PI control. It is shown that the control resulte of temperature are well followed to the desired temperature value. The developed untegrated measuring system will increase reliability and productivity of products.