• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.317-322
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• 2010

This paper reports the fabrication and characterization of surface micromachined poly 3C-SiC capacitive pressure sensors on silicon wafer operable in touch mode and normal mode for high temperature applications. FEM(finite elements method) simulation has been performed to verify the analytical mode. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal and the poly 3C-SiC layer. Measurements have been performed in a temperature range from $25^{\circ}C$ to $500^{\circ}C$. Fabrication process of designed poly 3C-SiC touch mode capacitive pressure sensor was optimized and would be applicable to capacitive pressure sensors that are required high precision and sensitivity at high pressure and temperature.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.150-155
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• 2005

We propose a newly developed automobile sensor monitoring system incorporated with a tire pressure monitoring sensor(TPMS). The RF-transmitter based on a tire pressure sensor, sends a frame data about measured tire-pressure to RF receiver. And the various sensing signals based on sensors such as fuel-level sensor, engine oil level sensor and temperature sensors, are converted into 10-bit digital data. The microprocessor displays converting data such as tire pressure, trip distance, fuel quantity, coolant temperature and car-room temperature, on LCD panel. The proposed system can be successfully adapted to monitoring of the tire pressure and various automobile sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.587-590
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• 2000

This paper presents the characteristics of metal thin-film pressure sensors. The micro pressure sensors consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si wafer an aluminium interconnection layer. The fabricated micro pressure sensors shows a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.16~1.21 mV/V.kgf/$\textrm{cm}^2$ in the temperature range of 25~l0$0^{\circ}C$ and the maximum non-linearity is 0.21 %FS.

• Journal of the Korean Society of Hazard Mitigation
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• v.8 no.6
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• pp.1-5
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• 2008

As bare Fiber Bragg Grating (FBG) sensors are very fragile, bare FBG without encapsulation is not properly applied in practical infrastructures directly due to the harsh environment in practical engineering. Steel sleeve packaged FBG strain sensor is widely used in civil engineering. Since FBG senses both strain and temperature simultaneously, for accurate measurement of strain, temperature compensation for FBG strain sensors is indispensable. In this paper, based on the FBG's strain and temperature sensing principles, the temperature compensation techniques for steel sleeve packaged FBG sensors are brought forward. And the experiment of concrete early-age shrinkage monitoring by dual FBG sensors is carried out to test the feasibility of the temperature compensation technique.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.866-870
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• 1993

For VO2-based sensors applicable to temperature measurements and optical disk materials by the nature of semiconductor to metal transition, the crystallinity and temperature vs. resistance characteristics were investigated as a function of the heat treatment temperature. The bead-type sensors were prepared through typical sensor fabrication processing and heat-treated at 40$0^{\circ}C$, 50$0^{\circ}C$, and $600^{\circ}C$, respectively, for 30 minutes in H2 gas atmosphere. As results of the temperature vs. resistance measurements, the electrical resistance in the phase transition range was decreased by 102 order for the VO2 sensor and by 103 order for the V71P11Sra18 system. It was estimated that the hysteresis, temperature vs. resistance, and current vs. voltage characteristics of the V71P11Sr18 system could be utilized for commericialization as a temperature sensor.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1998.10a
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• pp.150-160
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• 1998

Measuring temperature with ultrasonic wave apparatus is desirable in the case of both below 300$0^{\circ}C$ and ideal gas because of the fact that the temperature of gas is the function of only sound velocity. In this study, being used a heatable wind channel and a blower, the variation of temperature is observed in accordance with diverse flow rate(air velocity). The frequency modulation method is used to measure the temperature which is varying in hot air flow till 10$0^{\circ}C$. The length changed in the position of ultrasonic sensors is considered. Also, the effects of air velocity at the same temperature and various facing angles of ultrasonic sensors are considered. As a result of this study, it has been found that the temperature in gas flow is correctly measured regardless of both the distance of ultrasonic sensors and the variation of air velocity, and that there is just a little influence of facing angles.

• The Journal of the Acoustical Society of Korea
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• v.38 no.2
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• pp.214-221
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• 2019

In this paper, a temperature dependent acoustic receiving characteristics of underwater acoustic sensor is studied by theoretical and experimental investigations. Two different types (low mid frequency sensor and high frequency sensor) of underwater acoustic sensors are designed with different configuration of baffle and conditioning plate. The temperature dependent characteristics of the acoustic sensors are investigated within the temperature range from $-2^{\circ}C$ to $35^{\circ}C$. The material properties of the piezoelectric ceramics, molding and baffle, which are the primary materials of the acoustic sensors, are measured with temperature change. The temperature dependent RVS (Receiving Voltage Sensitivity) characteristics of the acoustic sensors are simulated by using the measured material properties. The RVS changes of the acoustic sensors are measured by changing temperature in the watertank where the acoustic sensors are installed. The measured and the simulated data show that the temperature dependent characteristics of the acoustic sensors are mainly dependent for the sound speed changes of the molding material.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.141-147
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• 2017

A pressure sensor in pulse measurement system is a core component for precisely measuring the pulse waveform of radial artery. A pulse sensor signal that measures the pulse wave in contact with the skin is affected by the temperature difference between the ambient temperature and skin surface. In this study, we found experimentally that the signal changes of the pressure sensors and a temperature sensor were caused by the temperature of the wrist surface while the pressure sensor was contacted on the skin surface for measuring pulse wave. To observe the signal change of the pulse sensor caused by temperature increase on sensor surface, Peltier device that can be kept at a set temperature was used. As the temperature of Peltier device was kept at $35^{\circ}C$ (the maximum wrist temperature), the device was put on the pulse sensor surface. The temperature and pressure signals were obtained simultaneously from a temperature sensor and six pressure sensors embedded in the pulse sensor. As a result of signal analysis, the sensor pressure was decreased during temperature increase of pulse sensor surface. In addition, the signal difference ratio of pressure and temperature sensors with respect to thickness of cover layer in pulse sensor was increased exponentially. Therefore, the signal of pressure sensor was modified by the compensation equation derived by the temperature sensor signal. We suggested that the thickness of cover layer in pulse sensor should be designed considering the skin surface temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.169-173
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• 1997

In this paper, auto measuring system for evaluating sensing reliability of infrared temperature sensors is developed. A developed system is composed of temperature controller, measuring sysytem and operating S/W. A constant temperature control of a chamber is accomplished by multi-heater using PI control. It is shown that the control resulte of temperature are well followed to the desired temperature value. The developed untegrated measuring system will increase reliability and productivity of products.