• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.328-335
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• 2001

In this work, we made the precision thin film resistors of NiCr alloy (74wt%Ni-f18wt%Cr-4wt%Al-4wt%Cu) using DC/RF magnetron sputtering method and studied the sheet resistance and TCR(Temperature Coefficient of Resistance) etc... of the Ni-Cr-Al-Cu alloy thin film according to the change by annealing treatment to 400$\^{C}$ in air and nitrogen atmosphere and the change(power, pressure, substrate temperature) of sputtering process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.57-62
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• 2008

From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was $350^{\circ}C$/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than ${\pm}10ppm/^{\circ}C$ were obtained. The TCR of the packaged-samples made at proper fabrication conditions was $-3{\sim}15ppm/^{\circ}C$ after the thermal cycling and $-20{\sim}180ppm/^{\circ}C$ after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.275-278
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• 2000

We were fabricated of NiCr thin film resistors(TFR) on A1$_2$O$_3$(99.5%) substrates by dc magnetic sputtering system. The characteristics of electrical resistance (Sheet resistance & Temperature-Coefficient of the resistance-value:TCR) by annealing condition and reactive gas on the resistors were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.269-274
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• 2022

We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.207-207
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• 2003

Uncooled infrared(IR) detectors that use a microbolometer with a large focal-plane array(FPA) have been developed with surface micromachining technology. There are many materials for microbolometers, such as metals, vanadium oxide, semiconductors and superconductors. Among theses, vanadium oxide is a promising material for uncooled microbolometers due to it high temperature coefficient of resistance(TCR) at room temperature. It is, however, is very difficult to deposit vanadium oxide thin films having a high TCR and low resistance because of the process limits in microbolometer fabrication. In general, vanadium oxides have been applied to microbolometer in mixed phases formed by ion beam deposition methods at low temperature with TCR in the range from -1.5 to -2.0%K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.59-62
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• 2017

CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between $-1,000{\sim}-2,000ppm/^{\circ}C$ and stable frequency properties under 100 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.64-65
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• 2005

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.