Improvement of bolometric properties of vanadium oxide by addition of tungsten

텅스텐 첨가에 의한 적외선 소자용 바나듐 옥사이드의 특성 향상

  • 한용희 (고려대학교 재료공학부) ;
  • 최인훈 (고려대학교 재료공학부) ;
  • 김근태 (한국과학기술연구원 마이크로 시스템 연구센터) ;
  • 신현준 (한국과학기술연구원 마이크로 시스템 연구센터) ;
  • 치엔 (한국과학기술연구원 마이크로 시스템 연구센터) ;
  • 문성욱 (한국과학기술연구원 마이크로 시스템 연구센터)
  • Published : 2003.11.01

Abstract

Uncooled infrared(IR) detectors that use a microbolometer with a large focal-plane array(FPA) have been developed with surface micromachining technology. There are many materials for microbolometers, such as metals, vanadium oxide, semiconductors and superconductors. Among theses, vanadium oxide is a promising material for uncooled microbolometers due to it high temperature coefficient of resistance(TCR) at room temperature. It is, however, is very difficult to deposit vanadium oxide thin films having a high TCR and low resistance because of the process limits in microbolometer fabrication. In general, vanadium oxides have been applied to microbolometer in mixed phases formed by ion beam deposition methods at low temperature with TCR in the range from -1.5 to -2.0%K.

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