Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of tantalum nitride thin film resistors deposited on $SiO_2/Si$ substrate using D.C-magnetron sputtering

  • Cuong, Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University) ;
  • Phuong, Nguyen Mai (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Dong-Jin (KMC technology) ;
  • Kang, Byoung-Don (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Chang-Soo (Material Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • Published : 2005.07.07
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Abstract

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

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