• 제목/요약/키워드: target materials

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단일 복합 타겟으로 스퍼터 코팅된 CIGS 박막의 형성과 열처리에 따른 미세구조 변화 (The Formation of CIGS Thin Films by Sputter Coating Using Single Composite Target and Change of Microstructure with Heat Treatment)

  • 송영식;김종렬
    • 한국표면공학회지
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    • 제46권2호
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    • pp.61-67
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    • 2013
  • Thin film solar cells have attracted much attention due to their high cell efficiency, comparatively low process cost, and applicability to flexible substrates. In particular, CIGS solar cells have been widely studied and produced because they demonstrated the highest cell efficiency. However, the deposition process of CIGS films generally includes the selenization process conducted at elevated temperature using toxic $H_2Se$ gas. To avoid this selenization process, CIGS thin films were, in this study, deposited by RF sputtering using single composite CIGS target. In addition, the effects of sputtering bias voltage and heat treatment on the microstructural and morphological changes in deposited CIGS films were investigated and discussed.

RF Sputter로 증착한 $Si_{1-x}$ $C_x$ 박막 내 실리콘 양자점의 광학적 특성평가

  • 문지현;김현종;이정철
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.53.1-53.1
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    • 2009
  • 실리콘 다층박막 태양전지를 위한 초고효율 실리콘 양자점 박막을 연구하기 위해 Silicon target과 Carbon target을 동시에 스퍼터하여 Silicon Carbide 박막을 증착하였다. Silicon Carbide 박막의 조성비는 target에 인가되는 RF Power를 조절하여 Auger Electro Spectroscopy를 사용하여 Si, C, O, N원소의 양을 정량화하여 측정하였다. Si Power를 200W에 고정하고, C Power를 0W에서 400W까지 변화시킬 때, $Si_{1-x}$ $C_x$ 박막에서 조성비 x는 0 ~ 0.43 범위였다. 이 박막을 증착 한 후에 질소 분위기에서 600 ~ $1000^{\circ}C$ 온도로 열처리를 진행하였다. High resolution TEM과 Raman 분석을 통해, 박막의 열처리 후 $Si_{1-x}$ $C_x$ 박막 내에 실리콘 양자점이 형성되었음을 관찰할 수 있었고, 2 ~ 10 nm 의 크기를 가지는 것으로 확인할 수 있었다. 이 실리콘 양자점을 포함한 $Si_{1-x}$ $C_x$ 박막을 적층하여 UV-VIS-NIR spectroscopy, FTIR및 PL와 같은 측정을 통해 광학적 에너지 밴드갭의 변화와 그에 따른 특성을 확인하였다.

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High energy laser heating and ignition study

  • Lee, K.C.;Kim, K.H.;Yoh, J.J.
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2008년 영문 학술대회
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    • pp.525-530
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    • 2008
  • We present a model for simulating high energy laser heating and ignition of confined energetic materials. The model considers effect of ablation of steel plate with long laser pulses and continuous lasers of several kilowatts and the thermal response of well-characterized high explosives for ignition. Since there is enough time for the thermal wave to propagate into the target and to create a region of hot spot in the high explosives, electron thermal diffusion of ultra-short(femto- and pico-second) lasing is ignored; instead, heat diffusion of absorbed laser energy in the solid target is modeled with thermal decomposition kinetic models of high explosives are used. Numerically simulated pulsed-laser heating of solid target and thermal explosion of cyclotrimethylenetrinitramine(RDX), triaminotrinitrobenzene(TATB), and octahydrotetranitrotetrazine(HMX) are compared to experimental results. The experimental and numerical results are in good agreement.

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Fabrication of Graphene-based Flexible Devices Utilizing Soft Lithographic Patterning Method

  • Jung, Min Wook;Myung, Sung;Kim, Kiwoong;Jo, You-Young;Lee, Sun Suk;Lim, Jongsun;Park, Chong-Yun;An, Ki-Seok
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.165-165
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    • 2014
  • In this study, we demonstrated that the soft lithographic patterning processing of chemical vapor deposition (CVD) graphene and rGO sheets as large scale, low cost, high quality and simplicity for future industrial applications. Recently, a previous study has reported that single layer graphene grown via CVD was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp [1]. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide (DMSO) molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface [2]. Further, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or simple and efficient chemical sensor consisting of reduced graphene oxide (rGO) and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated.

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Assessment of radiopacity of restorative composite resins with various target distances and exposure times and a modified aluminum step wedge

  • Mir, Arash Poorsattar Bejeh;Mir, Morvarid Poorsattar Bejeh
    • Imaging Science in Dentistry
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    • 제42권3호
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    • pp.163-167
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    • 2012
  • Purpose: ANSI/ADA has established standards for adequate radiopacity. This study was aimed to assess the changes in radiopacity of composite resins according to various tube-target distances and exposure times. Materials and Methods: Five 1-mm thick samples of Filtek P60 and Clearfil composite resins were prepared and exposed with six tube-target distance/exposure time setups (i.e., 40 cm, 0.2 seconds; 30 cm, 0.2 seconds; 30 cm, 0.16 seconds, 30 cm, 0.12 seconds; 15 cm, 0.2 seconds; 15 cm, 0.12 seconds) performing at 70 kVp and 7 mA along with a 12-step aluminum stepwedge (1 mm incremental steps) using a PSP digital sensor. Thereafter, the radiopacities measured with Digora for Windows software 2.5 were converted to absorbencies (i.e., A=-log (1-G/255)), where A is the absorbency and G is the measured gray scale). Furthermore, the linear regression model of aluminum thickness and absorbency was developed and used to convert the radiopacity of dental materials to the equivalent aluminum thickness. In addition, all calculations were compared with those obtained from a modified 3-step stepwedge (i.e., using data for the 2nd, 5th, and 8th steps). Results: The radiopacities of the composite resins differed significantly with various setups (p<0.001) and between the materials (p<0.001). The best predicted model was obtained for the 30 cm 0.2 seconds setup ($R^2$=0.999). Data from the reduced modified stepwedge was remarkable and comparable with the 12-step stepwedge. Conclusion: Within the limits of the present study, our findings support that various setups might influence the radiopacity of dental materials on digital radiographs.

SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성 (Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target)

  • 김철;김성동;김은경
    • 한국재료학회지
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    • 제26권4호
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    • pp.222-227
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    • 2016
  • Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

전자파를 이용한 목표물의 특성 분석에 관한 연구 (A Study on Analysis of Target Characteristics Using Electromagnetic Waves)

  • 이종길
    • 한국정보통신학회논문지
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    • 제19권6호
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    • pp.1289-1295
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    • 2015
  • 안테나에서 송출된 전자파 신호는 목표물로부터 반사되어져 수신된다. 이러한 반사 신호는 유전율 차이 등 목표물들의 물질 종류에 따라 서로 다른 특징들을 나타내게 된다. 따라서 이러한 반사 신호들의 특징들을 잘 활용하면 목표물들의 특성을 파악할 수 있다. 즉 위험 물질들의 분류 및 검사를 위하여 이러한 방법을 적용할 수 있다. 따라서 본 논문에서는 실험을 통하여 획득한 이러한 반사파 신호들의 특징을 활용하여 상관성(correlation)을 도출함으로서 그 특성, 즉 위험 물질들을 판단할 수 있는 방법을 고찰하고자 한다. 이러한 상관성에 의한 판단 방법은 특정 목표물에 대한 기준 신호의 저장을 필요로 하지만 비교적 신뢰할 수 있는 결과들을 보여준다. 그러므로 이러한 수신신호들의 상관성을 이용한 방법을 적용한다면 위험물질들의 구별 및 분류 등에 폭 넓게 활용할 수 있을 것이다.