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http://dx.doi.org/10.3740/MRSK.2016.26.4.222

Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target  

Kim, Cheol (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Kim, Sungdong (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology)
Kim, Sarah Eunkyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.26, no.4, 2016 , pp. 222-227 More about this Journal
Abstract
Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.
Keywords
SnO; tin oxide; reactive sputtering; composite target; p-type thin film;
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