• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.175-176
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.616-621
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• 2009

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.111-115
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• 2011

Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.33-37
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• 2006

For producing the fine ribs structure of plasma display panel, the metal ions of barrier materials during the etching process should be understood on the etching mechanism with etching conditions. Etching was done on bulk glasses of the $BaO_B_2O_3-ZnO$ system with $HNO_3$ solution at $40^{\circ}C$. The surface structure of glasses and ion dissolution were analyzed by ICP (Inductive Coupled Plasma measurement). The structure and surface of the etched bulk glass were investigated by using scanning electron microscopy and nanoindenter. As a result, Ba (3-35 ppm/min) and Zn (2-27 ppm/min) ions as major components were leached in the solution and the leached layers were found to be phosphor-rich surface layers. A decrease of the bridge oxygen and relative increase of non bridge oxygen in the etched glass were found by X-ray photoelectron spectroscopy.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.35-41
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• 2010

White Etching Layer(WEL) is a phenomenon that occurs on the surface of rail due to wheel/rail interactions such as excessive braking and acceleration. Rolling Contact Fatigue(RCF) cracks on the surface of rail have been found to be associated with WEL. In this study, we have investigated RCF damages of white etching layer using twin disc testing and fatigue analysis. These tests consist of wheel flat tests and rolling contact fatigue tests. WEL has been simulated by wheel flat test. It has been founded that the WEL with a bright featureless contrast is formed on the surface of specimen by etching. Rolling contact fatigue test was conducted by using flat specimens with the WEL generated by the wheel flat test. It has been observed that two types of cracks occur within the specimen. The contact fatigue test was simulated in 2D elastic-plastic FE simulations. Based on loading cycles obtained from the finite element analysis, the fatigue life analysis according to the thickness variation of WEL was carried out. The longest fatigue life was observed from the thickness of 20um.

• Restorative Dentistry and Endodontics
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• v.29 no.3
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• pp.273-280
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• 2004

The purpose of this study was to evaluate the etching effects and bond strength of total etching and self-etching adhesive system on unground enamel using scanning electron microscopy and microtensile bond strength test. The buccal coronal unground enamel from human extracted molars were prepared using low-speed diamond saw. Scotchbond Multi-Purpose (group SM). Clearfil SE Bond (group SE), or Adper Prompt L-Pop (group LP) were applied to the prepared teeth. and the blocks of resin composite (Filtek Z250) were built up incrementally. Resin tag formation was evaluated by scanning electron microscopy. after removal of enamel surface by acid dissolution and dehydration. For microtensile bond strength test. resin-bonded teeth were sectioned to give a bonded surface area of $1\textrm{mm}^2$. Microtensile bond strength test was perfomed. The results of this study were as follows. 1. A definite etching pattern was observed in Scotchbond Multi-Purpose group. 2. Self-etching groups were characterized as shallow and irregular etching patterns. 3. The results (mean) of microtensile bond strength were SM: 26.55 MPa, SE: 18.15 MPa, LP: 15.57 MPa. SM had significantly higher microtensile bond strength than 8E and PL (p < 0.05). but there was no significant differance between SE and PL.

• Applied Chemistry for Engineering
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• v.20 no.2
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• pp.172-176
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• 2009

In this research, we defined the basic structure of soft etching material as $H_2SO_4/H_2O_2$, and used additives as inhibitor, surfactant, and stabilizer. By analyzing influence to surface roughness and change of etching rate related to type and density of additives, we research to develop soft etching material having the same adhesiveness as existing etching material. As a result of research, it is estimated that after densities of $H_2O_2$ and $H_2SO_4$ are 3%, 4% respectively, 500 ppm of amine type 5-Azol, as inhibitor, and 600 ppm of PEI, as surfactant, and 10 ppm of phosphoric acid, as stabilizer, are added, is the most reasonable surface roughness and etching rate. As result of solder test, it is estimated that solder resist ink did not peel away or curl up and have reliable adhesiveness.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.238-242
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• 2003

The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.291-297
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• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1