• 제목/요약/키워드: surface display

검색결과 1,680건 처리시간 0.028초

Flow Analysis of the Spin Coating Machine

  • Ha, Man-Yeong;Kang, Dong-Hoon;Jeong, Bong-Kyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.1147-1150
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    • 2003
  • When a braun tube becomes wider, one of the major problems to be experienced is the non-uniform coating along the four diagonal directions on its surface. This non-uniformity in the coating thickness has a deep relation with the fluid flow on the surface of a braun tube. In order to control the fluid flow properly, we install the plate to block fluid flow at the corner of a braun tube. In the present study, we investigate the effects of the geometry of plate to control the fluid flow and coating uniformity and determine the optimal shape of plate to improve the quality of coating uniformity.

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네마틱 액정 동작 모드를 이용한 액정소자의 고속 응답 특성 (Fast Response Characteristics in Liquid Crystal Display using Operating Mode of the Nematic Liquid Crystal)

  • 배유한;황정연;김강우;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.206-209
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    • 2004
  • We investigated response characteristics of liquid crystal display(LCD) with different operating mode of nematic liquid crystals (NLCs) such as $45^{\circ}$twist nematic (TN), $67.3^{\circ}$TN and ECB(electrical controlled birefringence) on a rubbed polyimide (PI) surface. The three kinds of LCD operating mode obtain stable EO performance. Low transmittances of the $45^{\circ}$TN and $67.3^{\circ}$TN cell on the rubbed PI surface were achieved by using low cell gap d. The fast response time of ECB cell among the three kinds of LCD operating mode was measured.

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Rotating Compensator Spectroscopic Ellipsometer의 개발 및 응용 (Development and Application of Rotating Compensator Spectroscopic Ellipsometer)

  • 이재호;방경윤;박준택;오혜근;안일신
    • 반도체디스플레이기술학회지
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    • 제2권2호
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    • pp.1-4
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    • 2003
  • We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

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12" 웨이퍼 Spin etcher용 실시간 박막두께 측정장치의 개발 (Development of Real Time Thickness Measurement System of Thin Film for 12" Wafer Spin Etcher)

  • 김노유;서학석
    • 반도체디스플레이기술학회지
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    • 제2권2호
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    • pp.9-15
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    • 2003
  • This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

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Design of Semiconducting Gas Sensors for Room-Temperature Operation

  • Song, Young Geun;Kim, Gwang Su;Ju, Byeong-Kwon;Kang, Chong-Yun
    • 센서학회지
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    • 제29권1호
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    • pp.1-6
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    • 2020
  • Gas sensors that operate at room temperature have been extensively studied because of sensor stability, lift time, and power consumption. To design effective room-temperature gas sensors, various nanostructures, such as nanoparticles, nanotubes, nanodomes, or nanofibers, are utilized because of their large-surface-to-volume ratio and unique surface properties. In addition, two-dimensional materials, including MoS2, SnS2, WS2, and MoSe, and ultraviolet-activated methods have been studied to develop ideal room-temperature gas sensors. Herein, a brief overview of state-of-the-art research on room-temperature gas sensors and their sensing properties, including nanostructured materials, two-dimensional materials, the ultraviolet-activated method, and ionic-activated gas sensors, is provided.

Photolithography 공정으로 제작한 touch screen panel 용 Ag, Al, Cu metal mesh film (Ag, Al and Cu metal mesh films prepared by photolithography for touch screen panel)

  • 김서한;유미영;송풍근
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 추계학술대회 논문집
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    • pp.287-288
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    • 2015
  • 최근 투명 산화물 전극 (TCO)은 LED, electronic display, solar cell, touch screen panel (TSP) 등 다양한 분야에 많이 사용되고 있다. TCO는 높은 광 투과도와 전도성으로 인해 여러 분야에 많이 사용되고 있으며, 특히 ITO (Sn-doped indium oxide)가 display 분야에 많이 적용되고 있다. 하지만, ITO는 투과도와 면저항의 반비례 관계를 가지므로 더 낮은 면저항이 요구되는 대면적 TSP 분야에 적용되기에는 많은 개선이 필요하다. 따라서, 본 연구에서는 metal mesh film의 연구를 통해 TSP 분야에 사용되는 ITO를 대체하고자 한다. 제작된 mesh film은 모두 면저항은 $15{\Omega}/{\square}$ 이하, 광 투과도 90% (@550nm) 이상을 나타내었다.

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Effect of Bias Voltage on the Micro Discharge Characteristics of MgO Film prepared by Unbalanced Magnetron Sputtering

  • Kim, Young-Kee;Park, Jung-Tea;Park, Cha-Soo;Cho, Jung-Soo;Park, Chung-Hoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.101-102
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    • 2000
  • The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the de bias voltage of -10V showed lower discharge voltage, lower erosion rate by ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam evaporation.

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무잔류 응력상태 결정을 통한 표면 잔류응력장 평가에의 레이저 간섭계 적용 (Application of Laser Interferometry for Assessment of Surface Residual Stress by Determination of Stress-free State)

  • 김동원;이낙규;나경환;권동일
    • 반도체디스플레이기술학회지
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    • 제3권2호
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    • pp.35-40
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    • 2004
  • The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film / substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 $\mu\textrm{m}$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI...

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구형 연마재에 의한 표면 연마에 관한 분자동역학 시뮬레이션 연구 (Molecular Dynamics Simulations Study on Surface Polishing by Spherical Abrasive)

  • 박병흥;강정원
    • 반도체디스플레이기술학회지
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    • 제10권4호
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    • pp.47-51
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    • 2011
  • We investigated the substrate surface polishing by the spherical rigid abrasive under the compression using classical molecular dynamics modeling. We performed three-dimensional molecular dynamic simulations using the Morse potential functions for the various slide-to-roll ratios, from 0 to 1, and then, the compressive forces acting on the spherical rigid abrasive were calculated as functions of the time and the slide-to-roll ratio. The friction coefficients obtained from the classical molecular dynamics simulations were compared to those obtained from the experiments; and found that the molecular dynamic simulation results with the slide-to-roll ratio of 0 value were in good agreement with the experimental results.

극히 얕은 $N^+$-P 실리콘 접합에서의 어발런치 현상 (Avalanche Phenomenon at The Ultra Shallow $N^+$-P Silicon Junctions)

  • 이정용
    • 반도체디스플레이기술학회지
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    • 제6권3호
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    • pp.47-53
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    • 2007
  • Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

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