• 한국재료학회지
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• 제14권2호
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• pp.146-151
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• 2004

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

• 한국표면공학회지
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• 제38권6호
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• pp.207-211
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• 2005

In this work a multi-layered nanostructured TiAIN/CrN superlattice coatings was synthesized using closed-field unbalanced magnetron sputtering method and the relationships between their superlattice period (1), micro-structure, hardness and elastic modulus were investigated. In addition, wear test at $500^{\circ}C$ and oxidation resistance test at $900^{\circ}C$ were performed to investigate high temperature properties of these thin films. The coatings were characterized in terms of microstructure and mechanical properties by transmission electron microscopy (TEM) and nano-indentation test. Results from TEM analysis showed that superlattice periods was inversely proportional to the jig rotation speed. The maximum hardness and elastic modulus of 37 GPa and 375 GPa were observed at superalttice period of 6.1 nm and 4.4 nm, respectively. An higher value of microhardness from TiAIN/CrN thin films than either TiAIN (30 GPa) or CrN (26 GPa) was noted while the elastic modulus was approximately an average of TiAIN and CrN films. These enhancement effects in superlattice films could be attributed to the resistance to dislocation glide across interface between the CrN and TiAIN layers. Much improved plastic deformation resistance ($H^3/E^2$) of 0.36 from TiAIN/CrN coatings was observed, compared with 0.15 and 0.16 from TiAIN and CrN, respectively. Also the wear resistance at $500^{\circ}C$ was largely increased than those of single TiAIN and CrN coatings and TiAIN/CrN coatings showed much reduced weight gain after exposure at $900^{\circ}C$ for 20 hours.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.503-508
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• 2008

In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.4-4
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• 2010

Single-crystalline IGZO (Indium-Gallium-Zinc oxide) was fabricated on c-sapphire substrate. Single crystal ZnO was used as a buffer layer, and post-annealing was treated in $900^{\circ}C$ for crystallization of IGZO. Crystallized IGZO formed superlattice structure spontaneously induced to c-axis direction by ZnO butTer layer, the composition of IGZO was varied by amount of ZnO. Crystallinity and composition of IGZO was analyzed by X-ray Diffraction and Transmission Electron Microscopy.

• 한국자기학회지
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• 제3권4호
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• pp.310-313
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• 1993

Cu-Ni를 기저층으로 한 (100) Cu/Co 인공초격자에서 기저층에 첨가된 니켈의 함량이 자기저항에 미치는 영향을 조사하였다. 니켈의 함량이 증가하면서 인공초격자의 우선 방위가 fcc(100)에서 fcc(111)으로 변화하였는데 이는 기저층의 우선 방위가 바뀌었기 때문인 것으로 밝혀졌다. 니켈의 함량이 6%일때 [Cu(19 .angs. )/Co(30 .angs. )]/sub 20/ | Cu-6%Ni(200 .angs. )/Si 시편의 경우에 177 Oe에서 26.7%의 큰 자기저 항을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.41-41
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• 2007

For use in spintronic materials, dilute magnetic semiconductors (DMS) are under consideration as spin injectors for spintronic devices[l]. $TiO_2$-based DMS doped by a cobalt, iron, and manganese et al. was recently reported to show ferromagnetic properties, even at temperatures above 300K and the magnetic ordering was explained in terms of carrier-induced ferromagnetism, as observed for a III-V based DMS. An anomalous Hall effect (AHE) and co-occurance of superparamagnetism in reduced Co-doped rutile $TiO_{2-\delta}$ films have also been reported[2]. Metal segregation in the reduced metal-doped rutile $TiO_2-\delta$ films still remains as problems to solve the intrinsic DMS properties. Superlattice films have been proposed to get dilute magnetic semiconductor (DMS) with intrinsicroom-temperature ferromagnetism. For a $TiO_2$-based DMS superlattice structure, each layer was alternately doped by two different transition metals (Fe and Mn) and deposited to a thickness of approximately $2.7\;{\AA}$ on r-$Al_2O_3$(1102) substrates by pulsed laser deposition. The r-$Al_2O_3$(1102) substrates with atomic steps and terrace surface were obtained by thermal annealing. Samples of $Ti_{0.94}Fe_{0.06}O_2$(TiFeO), $Ti_{0.94}Mn_{0.06}O_2$(TiMnO), and $Ti_{0.94}(Fe_{0.03}Mn_{0.03})O_2$ show a low remanent magnetization and coercive field, as well as superparamagnetic features at room temperature. On the other hand, superlattice films (TiFeO/TiMnO) show a high remanent magnetization and coercive field. An anomalous Hall effect in superlattice films exhibits hysisteresis loops with coercivities corresponding to those in the ferromagnetic Hysteresis loops. The superlattice films composed of alternating layers of $Ti_{0.94}Fe_{0.06}O_2$ and $Ti_{0.94}Mn_{0.06}O_2$ exhibit intrinsic ferromagnetic properties for dilute magnetic semiconductor applications.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.56.2-56.2
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• 2007

• Applied Science and Convergence Technology
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• 제24권1호
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• pp.22-26
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• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.115-115
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• 2011

Nano hybrid superlattices consisting of organic and inorganic components have great potential for creation of new types of functional material by utilizing the wide variety of properties which differ from their constituents. They provide the opportunity for developing new materials with new useful properties. Herein, we fabricated new type of organic-inorganic nano hybrid superlattice thin films by a sequential, self-limiting surface chemistry process known as molecular layer depostion (MLD) combined with atomic layer deposition (ALD). An organic layer was formed at $150^{\circ}C$ using MLD with repeated sequintial adsorption of Hydroquinone and Titanium tetrachloride. A $TiO_2$ inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Titanium tetrachloride and water. Using UV-Vis spectroscopy, we confirmed visible light absorption by LMCT. And FTIR spectroscopy and XPS were employed to determine the chemical composition. Ellipsometry and TEM analysis were also used to confirm linear growth of the film versus number of MLD cycles at all same temperature. In addition, p-n junction diodes domonstrated in this study suggest that the film can be suitable for n-type semiconductors.