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http://dx.doi.org/10.4313/JKEM.2008.21.6.503

Measurement of Piezoelectric Effect and Reduction of Strain in InGaN/GaN Quantum Well with Superlattice Buffer  

Kong, Kyoung-Shick (한국외국어대학교 전자물리학과)
An, Joo-In (한국외국어대학교 전자물리학과)
Rhee, Seuk-Joo (한국외국어대학교 전자물리학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.6, 2008 , pp. 503-508 More about this Journal
Abstract
In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.
Keywords
InGaN; Piezoelectric field; Quantum well; Flat band; Reduction of strain;
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Times Cited By KSCI : 1  (Citation Analysis)
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