• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.141-153
• /
• 1997

The paraelectric cubic-to-ferroelectric tetragonal phase transition of the thin Pb(Zr, Ti)$O_3$ (PZT) films grown on MgO(001) substrate was investigated in a series of synchrotron x-ray scattering experiments. As the thickness of the film decreases the transition temperature and the amount of the tetragonal distortion were decreased continuously Different from only the c-domains were existent in the thinnest 25nm thick film. Based on this we propose a model for the domain structure of the tetragonal PZT/MgO(100) film that is very different from the ones suggested in literature. We attribute the suppression of the transition to the substrate field that prefers the c-type domains near the interface and suppresses the tetragonal distortion to minimize the film-substrate lattice mismatch.

• Journal of Electrical Engineering and Technology
• /
• v.2 no.4
• /
• pp.532-536
• /
• 2007

Carbon nanotube (CNT) properties, produced using a magnetic null discharge (MND) plasma production technology, were investigated. We firstly deposited the Fe layer 200 nm in thickness on Si substrate by the magnetic null discharge sputter method at the substrate temperature of $300도C$, and then prepared CNTs on the catalyst layer by using the magnetic null discharge (MND) based CVD method. CNTs were deposited in a gas mixture of CH4 and N2 at a total pressure of 1 Torr by the MND-CVD method. The substrate temperature and the RF power were $650^{\circ}C$ and 600W, respectively. The characterization data indicated that the proposed source could synthesize CNTs even under relatively severe conditions for the magnetic null discharge formation.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.215-219
• /
• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.63-67
• /
• 1991

Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.148-151
• /
• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.715-718
• /
• 2002

This paper investigated that resonant frequencies of microstrip patch antenna were agile when piezoelectric materials were used as the antenna substrates. When the bias is applied on them, thickness of the substrate is varied according. to the piezoelectric phenomenon. The microstrip patch antenna using Quartz substrate was fabricated and designed by Ensemble v 7.0 simulator. We fabricated the microstrip antennas using Quartz(Y-cut) as its substrate. When the operating frequencies of the microstrip antenna were 7.045GHz, 7.773GHz 8.18GHz the frequency shifts versus electric field, Emax=4[kV/cm], were 21MHz, 26MHz and 28MHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.12
• /
• pp.1277-1282
• /
• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.09a
• /
• pp.79-94
• /
• 2002

Root cause -Thermal expansion coefficient mismatch -Tape warpage -Initial die crack (die roughness) Guideline for failure prevention -Optimized tape/Substrate design for minimizing the warpage -Fine surface of die backside Root cause -Thermal expansion coefficient mismatch - Repetitive bending of a signal trace during TC cycle - Solder mask damage Guideline for failure prevention - Increase of trace width - Don't make signal trace passing the die edge - Proper material selection with thick substrate core Root cause -Thermal expansion coefficient mismatch -Creep deformation of solder joint(shear/normal) -Material degradation Guideline for failure Prevention -Increase of solder ball size -Proper selection of the PCB/Substrate thickness -Optimal design of the ball array -Solder mask opening type : NSMD -In some case, LGA type is better

• Journal of Sensor Science and Technology
• /
• v.16 no.3
• /
• pp.229-233
• /
• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.42 no.12 s.283
• /
• pp.865-871
• /
• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.