• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.391-402
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• 1999

Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.97-103
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• 2001

Polycrystalline thin films of La$_{2}$3/Sr$_{1}$3/MnO$_3$(LSMO) were prepared by water-based sol-gel processing on thermally oxidized Si(100) substrate. The thickness dependence of the low-field tunnel-type magnetoresistance properties at room temperature was studied. Tunnel-type magnetoresistance at low-field is found to be strongly dependent on film thickness. Maximum value of tunnel-type magnetoresistance of LSMO thin films was appeared at the film thickness of ~1500 $\AA$. This behavior can be explained in terms of dead layer between LSMO thin film and Si(100) substrate and thermal lattice strain effect in the LSMO thin films.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.288-294
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• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.54-59
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• 2015

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a $90^{\circ}$ glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at $0^{\circ}$. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.128-132
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• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.425-431
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• 2000

Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1664-1667
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• 2003

Aperture-coupled microstrip antenna is one type of microstrip antennas. This type of antenna has bandwidth wider than simple microstrip antenna. Herein, we use two substrates, that have the same dielectric constant 2.47 (PTFE-quartz) in which upper substrate is a rectangular patch. The microstrip patch is fed by a microstrip line which is printed on lower substrate, through an aperture or slot in the common ground plane of patch and microstrip feed. This antenna is analyzed by using Finite Difference Time Domain (FDTD) method the specific design frequency 10 GHz and match impedance is 50 ohms. The simulation results of its characteristics are input impedance, return loss, VSWR and radiation patterns respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.215-219
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• 2004

ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 $\mu\textrm{m}$/hr and the substrate temperature of $600^{\circ}C$. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

• Proceedings of the Korea Inteligent Information System Society Conference
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• 2001.01a
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• pp.224-229
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• 2001

When a semiconductor package is assembled, various materials such as die attach adhesive, lead frame, EMC (Epoxy Molding Compound), and gold wire are used. For better preconditioning performance, the combination between the packaging materials by studying the compatibility of their properties as well as superior packaging material selection is important. But it is not an easy task to find proper packaging material sets, since a variety of factors like package design, substrate design, substrate size, substrate treatment, die size, die thickness, die passivation, and customer requirements should be considered. This research applies case-based reasoning(CBR) technique to solve this problem, utilizing prior cases that have been experienced. Our particular interests lie in building decision support model to aid the selection of proper die attach adhesive. The preliminary results show that this approach is promising.