• The Journal of the Acoustical Society of Korea
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• v.38 no.4
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• pp.459-466
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• 2019

When a laser pulse is irradiated on a CNT (Carbon Nanotube) and PDMS (Poly dimethylsiloxane) composite coated on a transparent PMMA (Poly methyl methacrylate) substrate, a strong ultrasonic wave is generated due to the thermoelastic effect. In this paper, the thermoacoustic theory related to the wave generation by the CNT/PDMS composite was established. The waveforms of ultrasonic waves when a laser pulse having a Gaussian waveform is irradiated on the composite with a thickness of $20{\mu}m$ were numerically simulated. From the results, it was confirmed that ultrasonic shock waves can be generated from the CNT/PDMS composite and the waveforms are changed little even if the physical properties of the composite are changed by ${\pm}20%$. It was found that the peak positive and negative pressures increase as the thermal expansion coefficient increases, or as density, heat capacity and sound speed decreased. However, those changes were not so sensitive with thermal conductivity. In addition, the physical properties of the CNT/PDMS composite fabricated in this study were estimated from the comparison of the measurement and simulation results.

• Journal of Mushroom
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• v.19 no.2
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• pp.96-102
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• 2021

A new cultivar of oak mushroom 'Dadam' was bred from monokaryotic strains of 'GMLE36062-4' and 'GMLE36288-34'. The optimum temperature for mycelial growth of the new cultivar 'Dadam' on potato dextrose agar was 19-22℃. Total cultivation period of the new cultivar, from innoculation to its first harvest, was 135-139 days, similar to that of the control cultivar 'Hwadam'. The pileus color and stipe thickness of the new cultivar were darker and thinner than those of 'Hwadam'. Total yield of 'Dadam' was 621 g per 3 kg substrate, and is higher than that of 'Hwadam' (371 g). In farmhouse field test, it showed that the period of mycelial growth, browning, and fruiting body formation were the same as those of the control cultivar L808. The number of available fruiting bodies of 'Dadam' was 15, and is lower than that of the control (47), therefore, it was possible to save workforce in thinning. The total yield for 2 flush was 480 g for 'Dadam', similar to the 473 g of the control cultivar.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.89-94
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• 2021

The mechanical reliability of flexible devices has become a major concern on their commercialization, where the importance of reliable bonding is highlighted. In terms of component materials' properties, it is important to consider thermal damage of polymer substrates that occupy large area of the flexible device. Therefore, room temperature bonding process is highly advantageous for implementing flexible device assemblies with mechanical reliability. Conventional epoxy resins for the bonding still require curing at high temperatures. Even after the curing procedure, the bonding joint loses flexibility and exhibits poor fatigue durability. To solve this problems, low-temperature and adhesive-free bonding are required. In this work, we develop a room temperature bonding process for polymer substrates using carbon nanotube heated by microwave irradiations. After depositing multiple-wall carbon nanotubes (MWNTs) on PET polymer substrates, they are heated locally with by microwave while the entire bonding specimen maintains room temperature and the heating induces mechanical entanglement of CNT-PET. The room temperature bonding was conducted for a PET/CNT/PET specimen at 600 watt of microwave power for 10 seconds. Thickness of the CNT bonding joint was very thin that it obtains flexibility as well. In order to evaluate the mechanical reliability of the joint specimen, we performed lap shear test, three-point bending test, and dynamic bending test, and confirmed excellent joint strength, flexibility, and bending durability from each test.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.13-22
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• 2022

In this paper, we propose single and array antenna with dual linear polarization characteristics for 28 GHz band. The proposed antenna is designed two microstirp feeding structure and Taconic TLY-5 substrate, which is thickness 0.5 mm, and the dielectric constant is 2.2. The size of single patch antenna is 3.4 mm×3.4 mm, and total size of single antenna is 15.11 mm×15.11 mm. Also, the size of array antenna is 3.15 mm×3.15 mm, and total size of array antenna is 21.5 mm×13.97 mm. From the fabrication and measurement results, for 1×2 array antenna, in case of vertical polarization, cross polarization ratios are obtained from 14.23 dB to 20.79 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.31 dB to 22.74 dB for input port 1. in case of vertical polarization, cross polarization ratios are obtained from 15.75 dB to 25.88 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.70 dB to 22.82 dB for input port 2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.499-503
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• 2022

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩ·cm, 0.316%/℃, 296 K and 0.023 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Journal of Advanced Navigation Technology
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• v.25 no.6
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• pp.536-542
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• 2021

In this paper, we proposed a triple band printed monopole antenna with a bent branch strips for WiFi / 5G. An antenna structure in which bent strips for generating multiple resonance are attached in the form of branches was newly proposed based on a typical monopole strip vertically erected as a triple band antenna structure. The proposed antenna is designed on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 28×40 mm². The measured impedance bandwidth is 430 MHz (2.22~2.65 GHz) in the 2.4 GHz WLAN, 450 MHz (3.38~3.83 GHz) in the 3.5 GHz and 2390 MHz (4.95~7.34 GHz), In particular, it has been observed that antenna has a stable omnidirectional radiation patterns as well as gain of 1.537 dBi, 1.878 dBi and 2.337 dBi in the entire frequency band of interest.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.164-168
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• 2024

(La_0.7Sr_0.3)(Mn_1-xFe_x)O₃ (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO₂/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B_25/65-value increased. Electrical resistivity, TCR and B_25/65-value of the (La_0.7Sr_0.3)(Mn_0.88Fe_0.12)O₃ thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott's VRH model.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.197-206
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• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.