• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.17-22
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• 2020

Recently, the decrease in thin film thickness has been actively studied by changing several physical elements such as the increase in revolution velocity of lower substrate equipped with AC or DC motor. In this paper, we propose a novel spin coater control system that changes AC or DC motor and common use software with limitation of velocity and position control into step motor and LABVIEW software based on GUI to control revolution velocity and position more precisely. By determining six input values of rotation velocity 1, 5, 10, 25, 50, 100 PPS, we fabricated six samples using coating target, TA(tantalum) on silicon substrate and measured their thin film thickness by SEM. Hence, this research can be applied to inferring thin film thickness of tantalum regarding any value of revolution velocity without additional experiments and for linear reference model via property analysis of thin film thickness using other thin-film materials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.1-6
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• 2002

A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.575-576
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• 2006

It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on three different types of LEDs, which a have a different pattered sapphire substrate. And, the role of the patterned sapphire substrate are analyzed and discussed. Based on the analysis, the improvements of extraction efficiency in the LED structures were discussed and these analyses are helpful in the design of high brightness GaN LEDs.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.183-184
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• 2006

The simulation on the mechanism of terahertz NSOM(near-field scanning optical microscopy) have been investigated. Based on experimental results, we have demonstrated the antenna effects on the coupling between a metal tip and substrate for an emission-type terahertz NSOM. It has been found that the lateral resolution can be estimated by a simplified model using an infinitesimal dipole in the substrate.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.13-17
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• 1997

It is identified that the diamond films grown o bias-treated (100) silicon showed different surface morphologies and film textures according to the initial applied dc bias voltage at the same growth condition. The highly oriented diamond film (HODF) was successfully grown on -200 V bias-treated silicon substrate in which the heteroepitaxial relation of $(100)_{dimond}//(100)_{si}\; and\; [110]_{diamond}//[110]_{si}$ was identified. On the contrary, the heteroepitaxial relation was considerably disturbed in the samples bias-voltage was a key factor in growing the highly oriented diamond film on (100) silicon substrate. Considering the experimental results, we proposed a new model about heteroepitaxial diamond growth on silicon, in which 9 diamond unit cell are matched with 4 silicon cells and the bond covalency of both atoms is satisfied via the intermediate layer at the interface as well.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2245-2247
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• 2000

The purpose of this paper is to demonstrate for the design and the fabrication of suspended spiral inductors using the micromachining technology. Also. the characteristics of spiral inductors with substrate lossless are simulated by lumped-element model. The absence of the lossy silicon substrate after micormachining results in significantly improved quality factor characteristics of 14. Micromachined spiral inductors have the improvement of a quality factor of about 60% than spiral inductors on silicon which is not micromachined.

• Journal of computational fluids engineering
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• v.12 no.4
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• pp.14-19
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• 2007

We present a direct numerical simulation technique and some preliminary results of the capillary spreading of a droplet containing particles on the solid substrate. We used the level-set method with the continuous surface stress for description of droplet spreading with interfacial tension and employed the discontinuous Galerkin method for the stabilization of the interface advection equation. The distributed Lagrangian-multipliers method has been combined for the implicit treatment of rigid particles. We investigated the droplet spreading by the capillary force and discussed effects of the presence of particles on the spreading behavior. It has been observed that a particulate drop spreads less than the pure liquid drop. The amount of spread of a particulate drop has been found smaller than that of the liquid with effectively the same viscosity as the particulate drop.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.2
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• pp.101-106
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• 2009

The disjoining pressure is an important physical property in modeling the small-scale transport phenomena on thin film. It is a very useful definition in characterizing the non-continuum effects that are not negligible in heat and mass transport of the film thinner than submicro-scales. We present the calculated values of disjoining pressure of He, Kr and Xe thin films absorbed on graphite substrate using Molecular Dynamics Simulation (MD). The disjoining pressure is accurately calculated in the resolution of a molecular scale of the film thickness. The characteristics of the pressure are discussed regarding the molecular nature of the fluid system such as molecular diameter and intermolecular interaction parameters. The MD results are also compared with those based on the continuum approximation of the slab-like density profile and the results on other novel gases in the previous study. The discrepancies of the continuum model with MD results are shown in all three configurations and discussed in the view point of molecular features.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.532-539
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• 1996

Diamond-like carbon (DLC) films were deposited on silicon substrates by the plasma decomposition of hydrocarbons under various conditions, and studied by the spectroscopic ellipsometry (SE). We used the effective medium approximation with the dispersion model developed by Forouhi and Bloomer to determine simultaneously both the structure and the optical constants of the DLC films from their ellipsometric spectra. Especially, we investigated the variation of the multilayer structure including the interface layer, of the refractive indices, and of the extinction coefficients as the deposition conditions were varied; substrate pretreatment procedure, hydrocarbon precursors, and the substrate bias voltage were varied.