• Journal of the Optical Society of Korea
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• 제17권3호
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• pp.269-274
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• 2013

The effect of diffusing substrate and pillow lenses on the outcoupling efficiency of organic light-emitting diodes (OLEDs) was studied by optical simulation based on the point-dipole model. The diffusing substrate included Mie scatterers by which the condition of total internal reflection could be broken. The finite-difference time-domain method was used to obtain the intensity distribution on the transparent electrode of an OLED, which was used as a light source to carry out a ray-tracing simulation of the OLED and the diffusing substrate. It was found that the outcoupling efficiency of the OLED was sensitive to the thickness of organic layers and could be increased by 21.0% by adopting a diffusing substrate in which Mie scatterers whose radius was $2.0{\mu}m$ were included at the density of $10^7mm^{-3}$ and by 65.5% by forming one pillow lens with the radius of 2 mm on the front surface of the glass substrate. This study revealed that the outcoupling efficiency could be improved by adopting diffusing substrate and pillow lenses along with the optimization of the thickness of each layer in the OLED.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.27-31
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• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.611-614
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• 2003

We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.189-192
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• 2001

A simple metal-insulator-metal (MIM) capacitor in a standard $0.25{\;}\mu\textrm{m}$ digital CMOS process is described. Using all six interconnect layers, this capacitor exploits both the lateral and vertical electrical fields to increase the capacitance density (capacitance per unit area). Compared to a conventional parallel plate capacitor in the four upper metal layers, this capacitor achieves lower parasitic substrate capacitance, and improves the capacitance density by a factor of 4. Measurements and an extracted model for the capacitor are also presented. Calculations, model and measurements agree very well.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1463-1465
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• 2008

We report all-ink-jet printed inorganic/organic hybrid TFTs on plastic substrates. We have investigated the optimal printing conditions to make uniform patterned layers of gate electrode, dielectrics, source/drain electrodes, and semiconductor as a coplanar type TFT in a successive manner. All ink-jet printed devices have good mechanical flexibility and current modulation characteristic even when bent.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.125-125
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• 2006

We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.277-277
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• 2010

In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.755-758
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• 2005

The mechanism responsible for liquid crystal (LC) alignment on solid substrates treated with mechanical rubbing or polarized UV is not understood. The results of x-ray reflectivity study of LC alignment on a large number of different alignment layers show that the anisotropy in the surface roughness of the substrate completely determines the LC alignment. The anchoring energy depends on the degree of roughness anisotropy and chemical interactions between the substrate and LC molecules.

• 한국표면공학회지
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• 제41권6호
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• pp.308-311
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• 2008

Oxide layers were prepared on Al2021 alloys substrate under a hybrid voltage of AC 200 V (60 Hz) combined with DC 260 V value at room temperature within $5{\sim}60\;min$ by plasma electrolytic oxidation (PEO). An optimized aluminate-fluorosilicate solution was used as the electrolytes. The surface morphology, thickness and composition of layers on Al2021 alloys at different reaction times were studied. The results showed that it is possible to generate oxide layers of good properties on Al2021 alloys in aluminate-fluorosilicate electrolytes. Analysis show that the double-layer structure oxide layers consist of different states such as ${\alpha}-{Al_2}{O_3}$ and ${\gamma}-{Al_2}{O_3}$. For short treatment times, the formation process of oxide layers follows a linear kinetics, while for longer times the formation process slows down and becomes a steady stage. During the PEO processes, the average size of the discharge channels increased gradually as the PEO treatment time increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.