• Title/Summary/Keyword: substrate interaction

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Phase Formation of $BaTiO_3$ Thin Films by Sputtering (Sputtering법에 의한 $BaTiO_3$ 박막의 상형성에 관한 연구)

  • 안재민;최덕균;김영호
    • Journal of the Korean Ceramic Society
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    • v.30 no.8
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    • pp.657-663
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    • 1993
  • BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

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Self-Assembly of Pentacene Molecules on Epitaxial Graphene

  • Jung, Woo-Sung;Lee, Jun-Hae;Ahn, Sung-Joon;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.230-230
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    • 2012
  • Graphene have showed promising performance as electrodes of organic devices such as organic transistors, light-emitting diodes, and photovoltaic solar cells. In particular, among various organic materials of graphene-based organic devices, pentacene has been regarded as one of the promising organic material because of its high mobility, chemical stability. In the bottom-contact device configuration generally used as graphene based pentacene devices, the morphology of the organic semiconductors at the interface between a channel and electrode is crucial to efficient charge transport from the electrode to the channel. For the high quality morphology, understanding of initial stages of pentacene growth is essential. In this study, we investigate self-assembly of pentacene molecules on graphene formed on a 6H-SiC (0001) substrate by scanning tunneling microscopy. At sub-monolayer coverage, adsorption of pentacene molecules on epitaxial graphene is affected by $6{\times}6$ pattern originates from the underlying buffer layer. And the orientation of pentacene in the ordered structure is aligned with the zigzag direction of the edge structure of single layer graphene. As coverage increased, intermolecular interactions become stronger than molecule-substrate interaction. As a result, herringbone structures the consequence of higher intermolecular interaction are observed.

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A Study on Thermodynamics for Compositional Separation in Co-Cr magnetic Alloy Films (Co-Cr 자성합금 박막의 조성적 상분리 현상의 열역학적 고찰)

  • Song, O-Seong;Jeon, Jeon-An
    • Korean Journal of Materials Research
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    • v.9 no.4
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    • pp.341-344
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    • 1999
  • We reported compositional separation(CS) into Co-enriched and Cri-enriched components inside the grains of Co-Cr based thin films prepared by rf sputtering. CS strongly depends on the sputtering conditions of substrate temperature and target composition. Tuning the microstructure of the Co-Cr films is important in order to employ the CS for high-density magnetic recording. We investigated the origin of CS from thermodynamic viewpoint. We employ a spinodal decomposition-like model to describe the origin of the CS in Co-Cr films. We consider the total free energy of the Co-Cr films as the sum of several free energies of; 1) thermodynamic mixing entropy of a binary solid solution, 2) magnetic ordering interaction(MOI) energy below the Curie temperature, and 3) excess interaction energy(XS) caused by the sputtering process as a function of temperature and composition. Those energies distorted the total free energy like the spinodal decomposition and caused the compositionally separated fine microstructure inside the grains. If the second derivative of the total free energy with respect to Cr composition becomes negative at a given substrate temperature, we may observe a metastable compositional separation inside the Co-Cr alloy films. We expect to exploit the microstructure of CS for ultra-high density magnetic recording.

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Formation Conditions of PZT Thin Films for ULSI -A study on the formation and characteristics of PZT thin films by rapid thermal annealing- (초고집적 회로용 PZT 박막의 형성조건 -스퍼터링법으로 Si, TiN/Ti/Si 기판위에 증착된 PZT 박막의 급속 열처리에 의한 결정화 및 특성-)

  • 마재평;박치선;백수현;황유상;백상훈;최진성;조현춘
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.10
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    • pp.59-66
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    • 1993
  • PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

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Effect of Antifoam Agents on $\Delta^1$-Dehydrogenation of Hydrocortisone (Hydrocortisonee 의 $\Delta^1$-Dehydrogenation 에서 소포제의 영향)

  • Chung, Bong-Hyun;Son, Jung-Duk;Park, Young-Hoon
    • Microbiology and Biotechnology Letters
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    • v.17 no.3
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    • pp.219-223
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    • 1989
  • Effect of antifoam agents, silicone oil and neolin 302, was investigated on the production of prodnisolone by microbial $\Delta$$^1$-Dehydrogenation of hydrocortisone. The microbial process was conduct-ed by using a pseudo-crystallofermentation. By the hydrophobic-hydrophobic interaction, the steroid crystals aggregated with the antifoam agents. The aggregation resulted in a decrease of total mass transter area of substrate particles which is proportional to the dissolution rate of the solid substrate, and it consequently led to a significant decrease of the bioconversion rate. The bioconversion with neolin proceeded more slowly than with silicone oil. Increase of the concentration of the antifoam agents also yielded a significant decrease of the bioconversion rate.

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Growth and Energy Level Alignment of Pentacene on SiO2 Surfaces before and after OTS Treatment (OTS처리 전후 실리콘산화막 위에서 펜타신의 성장과 에너지준위의 정렬)

  • Kim, J.W.;Lee, Y.M.;Park, Y.
    • Journal of the Korean Vacuum Society
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    • v.17 no.5
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    • pp.394-399
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    • 2008
  • Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.

Angle-resolved Photoemission Study of Epitaxial Graphene on Cu(111)

  • Lee, Wang-Geun;Jeon, Cheol-Ho;Hwang, Han-Na;Kim, Kwang-S.;Park, Chong-Yun;Hwang, Chan-Cuk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.126-126
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    • 2012
  • Copper is considered to be the most promising substrate, especially Cu(111), for the growth of high quality monolayer graphene. Since interactions between graphene and Cu substrates will influence on the orientation, quality, and electrical properties of synthesized graphene, we experimentally determine a weak interfacial interaction between Cu(111) substrate and graphene using angle-resolved photoemission spectroscopy (ARPES). The measurement was conducted from the initial stage to the formation of a graphene monolayer. Graphene growth was initiated along the Cu(111) lattice, and two rotated graphene domains were grown, where no significant differences were observed in the band structure depending on different orientations. The interaction, including electron transfer from the Cu(111) to graphene, was limited between the Shockley state of the Cu(111) surface and the ${\pi}$ bands of graphene. These results provide direct information on the growth behavior and interactions between the Cu(111) and graphene.

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Electronic structure of the Au intercalated monolayer graphene on Ni(111)

  • Hwang, H.N.;Jee, H.G.;Han, J.H.;Tai, W.S.;Kim, Y.D.;Hwang, C.C.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.342-342
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    • 2010
  • We have investigated an Au intercalated monolayer graphene on Ni(111) using angle-resolved photoemission spectroscopy (ARPES), high resolution photoemission spectroscopy (HRPES), and low energy electron diffraction (LEED) at the 3A2 ARUPS beamline in Pohang Accelerator Laboratory. We find the monolayer graphene is well grown on the Ni(111) surface by the adsorption of acetylene. However, the graphene does not show the characteristic $\pi$ band near the Fermi level due to its strong interaction with the underlying substrate. When Au is adsorbed on the surface and then annealed at high temperature, we observe that Au is intercalated underneath the monolayer graphene. The process of the Au intercalation was monitored by HRPES of corresponding Au 4f and C 1s core levels as well as the electronic structure of the $\sigma$, $\pi$ states at $\Gamma$, K points. The $\sigma$, $\pi$ bands of graphene shift towards the Fermi level and the $\pi$ band is clearly observed at K point after the intercalation of full monolayer Au. The full width at half maximum (FWHM) of the C 1s peak narrows to approximately 0.42 eV after intercalation. These results imply that the interaction between the graphene and substrate is considerably weakened after the Au intercalation. We will discuss the graphene is really closer to ideal free standing graphene suggested recently.

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Altering UDP-Glucose Donor Substrate Specificity of Bacillus licheniformis Glycosyltransferase towards TDP-Glucose

  • Cho, Kye Woon;Kim, Tae-Su;Le, Tuoi Thi;Nguyen, Hue Thi;Oh, So Yeong;Pandey, Ramesh Prasad;Sohng, Jae Kyung
    • Journal of Microbiology and Biotechnology
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    • v.29 no.2
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    • pp.268-273
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    • 2019
  • The specificity of a Bacillus licheniformis uridine diphosphate (UDP) glycosyltransferase, YjiC, was increased towards thymidine diphosphate (TDP)-sugar by site-directed mutagenesis. The Arg-282 of YjiC was identified and investigated by substituting with Trp. Conversion rate and kinetic parameters were compared between YjiC and its variants with several acceptor substrates such as 7-hydroxyflavone (7-HF), 4',7-dihydroxyisoflavone, 7,8-dihydroxyflavone and curcumin. Molecular docking of TDP-glucose and 7-HF with YjiC model showed pi-alkyl interaction with Arg-282 and His-14, and pi-pi interaction with $His^{14}$ and thymine ring. YjiC (H14A) variant lost its glucosylation activity with TDP-glucose validating significance of His-14 in binding of TDP-sugars.

Rapid Topological Patterning of Poly(dimethylsiloxane) Microstructure (Poly(dimethylsiloxane) 미세 구조물의 신속한 기하학적 패터닝)

  • Kim, Bo-Yeol;Song, Hwan-Moon;Son, Young-A;Lee, Chang-Soo
    • Textile Coloration and Finishing
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    • v.20 no.1
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    • pp.8-15
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    • 2008
  • We presented the modified decal-transfer lithography (DTL) and light stamping lithography (LSL) as new powerful methods to generate patterns of poly(dimethylsiloxane) (PDMS) on the substrate. The microstructures of PDMS fabricated by covalent binding between PDMS and substrate had played as barrier to locally control wettability. The transfer mechanism of PDMS is cohesive mechanical failure (CMF) in DTL method. In the LSL method, the features of patterned PDMS are physically torn and transferred onto a substrate via UV-induced surface reaction that results in bonding between PDMS and substrate. Additionally we have exploited to generate the patterning of rhodamine B and quantum dots (QDs), which was accomplished by hydrophobic interaction between dyes and PDMS micropatterns. The topological analysis of micropatterning of PDMS were performed by atomic force microscopy (AFM), and the patterning of rhodamine B and quantum dots was clearly shown by optical and fluorescence microscope. Furthermore, it could be applied to surface guided flow patterns in microfluidic device because of control of surface wettability. The advantages of these methods are simple process, rapid transfer of PDMS, modulation of surface wettability, and control of various pattern size and shape. It may be applied to the fabrication of chemical sensor, display units, and microfluidic devices.