Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Growth and Energy Level Alignment of Pentacene on SiO2 Surfaces before and after OTS Treatment

OTS처리 전후 실리콘산화막 위에서 펜타신의 성장과 에너지준위의 정렬

  • Kim, J.W. (Division of Advanced Technology, Korea Research Institute of Standards and Science) ;
  • Lee, Y.M. (Department of Physics, Kyung Hee University) ;
  • Park, Y. (Department of Physics, Kyung Hee University)
  • 김정원 (한국표준과학연구원 전략기술연구본부) ;
  • 이영미 (경희대학교 물리학과) ;
  • 박용섭 (경희대학교 물리학과)
  • Published : 2008.09.30
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Abstract

Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.

산화규소막에 Octadecyltrichlorosilane (OTS)로 자기조립층을 형성하기 전후에 펜타신을 흡착하여 광전자분광기술 및 광전현미경을 이용하여 전자구조 및 분자성장을 비교 관찰하였다. OTS처리한 경우 펜타신과 기판사이의 상호작용이 비교적 약하여 펜타신의 표면 확산이 활발하고 펜타신끼리 서로 뭉쳐서 성장함으로써, 시료와 펜타신의 에너지준위 정렬을 나타내는 HOMO 오프셋 값이 계속적으로 변하는 결과를 가져온다. 이에 반해 산화규소막 위에서는 펜타신이 기판과 비교적 강하게 결합하여 초기부터 에너지준위 정렬값에 크게 기여를 하고 두께가 증가해도 그 변화는 미미하다.

Keywords

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