Browse > Article
http://dx.doi.org/10.5757/JKVS.2008.17.5.394

Growth and Energy Level Alignment of Pentacene on SiO2 Surfaces before and after OTS Treatment  

Kim, J.W. (Division of Advanced Technology, Korea Research Institute of Standards and Science)
Lee, Y.M. (Department of Physics, Kyung Hee University)
Park, Y. (Department of Physics, Kyung Hee University)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.5, 2008 , pp. 394-399 More about this Journal
Abstract
Growth and electronic structure of pentacene film on silicon oxide before and after octadecyltrichlorosilane (OTS) treatment have been studied by photoelectron spectroscopy and photoelectron emission microscopy. On the OTS-treated surface, due to the weak interaction between the substrate and pentacene, the diffusion of pentacene is enhanced and domain size gradually grows, leading to a gradual change of the HOMO offset position. On the bare silicon oxide, the change of the HOMO position is marginal because of relatively strong interaction between the substrate and pentacene from the beginning.
Keywords
Pentacene; Octadecyltrichlorosilane (OTS); UPS; PEEM;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 S. Pyo, J. Choi, Y. Oh, H. Son, and M. H. Yi, Appl. Phys. Lett. 88, 173501(2006)   DOI   ScienceOn
2 A. Oelsner, O. Schmidt, M. Schicketanz, M. Klais, G. Schönhense, V. Mergel, O. Jagutzki, H. Schmidt-Böcking, Rev. Sci. Instrum. 72, 3968 (2001)   DOI   ScienceOn
3 M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schütz, S. Maisch, F. Effenberger, M. Brunnbauer, and F. Stellacci, Nature 431, 963 (2004)   DOI   ScienceOn
4 H. Fukagawa, H. Yamane, T. Kataoka, S. Kera, M. Nakamura, K. Kudo, and N. Ueno, Phys. Rev. B 73, 245310(2006)   DOI   ScienceOn
5 H. Kakuta, T Hirahara, I. Matsuda, T. Nagao, S. Hasegawa, N. Ueno, and K. Sakamoto, Phys. Rev. Lett. 98, 247601(2007)   DOI   ScienceOn
6 S. B. Son, H. Lee, I. C. Jeon, and J. R. Hahn, J. Kor. Vac. Soc. 15, 145 (2006)   과학기술학회마을
7 D. Guo, S. Entani, S. Ikeda, and K. Saiki, Chem. Phys. Lett. 429, 124 (2006)   DOI   ScienceOn
8 C.-K Min, J. W. Kim, Y. Park, Surf. Sci. 601, 4722 (2007)   DOI   ScienceOn
9 R. Ruiz, B. Nickel, N. Koch, L. C. Feldman, R. F. Haglund, A. Kahn, and G. Scoles, Phys. Rev. B 67, 125406 (2003)   DOI   ScienceOn
10 S. J. Han, J.-H. Kim, J. W. Kim, C.-K. Min,. S.-H. Hong, D.-H. Kim, K.-H. Baek, G.-H. Kim, L.-M. Do, and Y. Park, J. Appl. Phys. 104, 013715 (2008)   DOI   ScienceOn
11 V. Coropceanu, J. Cornil, D. A. da Silva Filho, Y. Olivier, R. Silbey, and J. Bréas, Chem. Rev. 107, 926 (2007)   DOI   ScienceOn
12 B.-K. Choo, J.-S. Choi, G. J. Kim, S.-H. Lee, K.-C. Park, and J. Jang, J. Kor. Vac. Soc. 15, 354 (2006)   과학기술학회마을
13 C. Reese, M. Roberts, M. Ling, and Z. Bao, Mater. Today 7, 20 (2004)
14 M. McDowell, I. G. Hill, J. E. McDermott, S. L. Bernasek, and J. Schwartz, Appl. Phys. Lett. 88, 073505 (2006)   DOI   ScienceOn