• Proceedings of the KSME Conference
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• 2007.05a
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• Proceedings of the Korea Contents Association Conference
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• 2007.11a
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• pp.804-806
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• 2007

C-axis oriented zinc oxide thin films were deposited on Si(100) substrate by rf magnetron sputtering. The effects of deposition parameters on the crystallinity and electrical properties of ZnO films were investigated. As-deposited ZnO films showed the strong c-axis growth andexcellent crystallinity under the deposition conditions as follows ; substrate temperaturec : $200^{\circ}C$, rf power : 150W, gas ratio : $O_2/Ar=50/50$, chamber pressure : 10mTorr. The resistivity of ZnO films was significantly affected by deposition parameters. With increasing percentage of oxygen, and decreasing substrate temperature, the resistivity of ZnO films increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.91-94
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• 1997

$\alpha$-sexithienyl($\alpha$-6T) thin films were deposited by Organic Molecular Beam Deposition(OMBD) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature. and vacuum pressure an the formation of these films have been studied. The molecular orientations of $\alpha$-6T films were investigated with the polarized electronic absorption spectroscopy. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The film deposited at an elevated substrate temperature (~9 $O^{\circ}C$) showed higher conductivity than the film deposited at room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.637-640
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• 2006

DuPont Teijin Films (DTF) have developed engineered substrates specifically for the flexible electronics market. $Teonex^{(R)}Q65$ is a biaxially oriented crystalline polyester with a tailored surface and it is emerging as a competitive material for the base substrate in OLED displays and active matrix backplanes. Given the dimensional reproducibility requirements in the display applications, uncontrolled moisture absorption during the processing cycle could potentially be far more significant than the inherent shrinkage of the base substrate. Understanding these effects and optimising the processing steps involved in device manufacture will be critical to achieving the ultimate performance that can be achieved with the base substrate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.249-255
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• 1990

High Tc Supperconducting thin films were fabricated by rf magnetron sputtering method. We have successfully controlled the compositions of films by adding sintered CuO pellets on YBa2Cu3O7-x single target. High Tc thin films with large grian size and good crystal habit were obtained by rapid thermal annealing process. The films deposited on SrTiO3(100) single crystal substrate indicated the existence of c-axis prefered orientation confirmed by XRD and SEM analysis. The Tc, zero's of sharp resistive transition for rapid annealed films deposited on polycrystalline YSZ substrate and on SrTiO3(100) single crystal substrate were 79K and 88K, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.191-193
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• 2005

This study has investigated the effects of the etching method of a Ti substrate for a metal oxide electrode on the electrochemical characteristics of the electrode. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrode was tested for Ru, Zr, Sn oxide on the Ti substrate using SEM, XRD, Cyclic voltammetry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.484-487
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• 2001

Amorphous carbon thin films were deposited using laser ablation technique on Si(100) substrates at different temperatures. In this study, effects of the substrate temperature on the properties of amorphous carbor, films were systematically investigated. The surface morphologic and structural properties of the films were studied by scanning electron microscopy (SEM) and raman spectroscope, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover the intensity ratio of D-band and G-band and the full width at half maximum of these bands were dependent on substrate temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.526-529
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• 2004

The nematic liquid crysta](NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of NLC on low substrate rf bias applied a-C:H thin films was observed and the low pretilt angle of the NLC on high substrate rf bias applied a-C:H thin films was observed. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1 W rf bias condition can be achieved. It is considered that pretilt angle of the NLC may be attributed to substrate rf bias condition and IB energy time. Therefore, LC alignment is affected by topographical structure forming strong IB energy.