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http://dx.doi.org/10.4313/JKEM.2004.17.5.526

Alignment Effects for Nematic Liquid Crystal using a-C:H Thin Films Deposited at Rf Bias Condition  

황정연 (연세대학교 전기전자공학과)
박창준 (연세대학교 전기전자공학)
서대식 (연세대학교 전기전자공학)
안한진 (연세대학교 재료공학)
백홍구 (연세대학교 재료공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.5, 2004 , pp. 526-529 More about this Journal
Abstract
The nematic liquid crysta](NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of NLC on low substrate rf bias applied a-C:H thin films was observed and the low pretilt angle of the NLC on high substrate rf bias applied a-C:H thin films was observed. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1 W rf bias condition can be achieved. It is considered that pretilt angle of the NLC may be attributed to substrate rf bias condition and IB energy time. Therefore, LC alignment is affected by topographical structure forming strong IB energy.
Keywords
a-C:H; Ion beam (IB); Rf bias condition; Pretilt angle; Nematic liquid crystal;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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