• Journal of Welding and Joining
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• v.35 no.3
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• pp.7-14
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• 2017

The effect of high temperature-moisture on corrosion and mechanical properties for Sn-0.7Cu, Sn-3.0Ag-0.5Cu (SAC305) solders on flexible substrate was studied using Highly Accelerated Temperature/Humidity Stress Test (HAST) followed by three-point bending test. Both Sn-0.7Cu and SAC305 solders produced the internal $SnO_2$ oxides. Corrosion occurred between the solder and water film near flexible circuit board/copper component. For the SAC305 solder with Ag content, furthermore, octahedral corrosion products were formed near Ag3Sn. For the SAC305 and Sn-0.7Cu solders, the amount of internal oxide increased with the HAST time and the amount of internal oxides was mostly constant regardless of Ag content. The size of the internal oxide was larger for the Sn-0.7Cu solder. Despite of different size of the internal oxide, the fracture time during three-point bending test was not significantly changed. It was because the bending crack was always initiated from the three-point corner of the chip. However, the crack propagation depended on the oxides between the flexible circuit board and the Cu chip. The fracture time of the three-point bending test was dependent more on the crack initiation than on the crack propagation.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.348-353
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• 1996

Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

• Journal of Electrochemical Science and Technology
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• v.8 no.1
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• pp.7-14
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• 2017

This study aims to examine the influences of substrates/diffusion layers (DL) and oxygen reduction reaction catalysts ($M_{ORR}$) on the performance of $M_{ORR}/IrO_2$/DL-type bifunctional oxygen electrodes for use in polymer electrolyte membrane (PEM)-type unitized regenerative fuel cells (URFC). The $M_{ORR}/IrO_2$/DL electrodes were prepared via two sequential steps: anodic electrodeposition of $IrO_2$ on various DLs and fabrication of $M_{ORR}$ layers (Pt, Pd, and Pt-Ru) by spraying on $IrO_2/DL$. Experiments using different DLs, with Pt as the $M_{ORR}$, revealed that the roughness factor of the DL mainly determined the electrode performance for both water electrolyzer (WE) and fuel cell (FC) operations, while the contributions of porosity and substrate material were insignificant. When Pt-Ru was utilized as the $M_{ORR}$ instead of Pt, WE performance was enhanced and the electrode performance was assessed by analyzing round-trip efficiencies (${\varepsilon}_{RT}$) at current densities of 0.2 and $0.4A/cm^2$. As a result, using Pt-Ru instead of Pt alone provided better ${\varepsilon}_{RT}$ at both current densities, while Pd resulted in very low ${\varepsilon}_{RT}$. Improved efficiency was related to the additional catalytic action by Ru toward ORR during WE operation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2816-2822
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• 2014

In this paper, a wideband loop antenna for UWB applications is studied. The structure of the proposed wideband loop antenna is a circular loop antenna with appended circular sectors to obtain an ultra-wideband characteristic. The circular sectors are used instead of conventional triangular sectors to match with the 50 ohm feed line. Optimal design parameters are obtained by analyzing the effects of the gap between the circular sectors and the radius of the circular loop on the input reflection coefficient and gain characteristics. The optimized wideband loop antenna is fabricated on an FR4 substrate with a dimension of 41 mm by 41 mm. Experiment results show that the proposed antenna has a frequency band of 3.1-11.0 GHz for a VSWR < 2.25, which assures the operation in the UWB band. Measured gain ranges 1.3-5.3 dBi in the UWB band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1845-1851
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• 2016

In this paper, a design method for a wideband square loop antenna for Digital TV applications is studied. The proposed loop antenna is a square loop antenna combined with circular sectors to connect with central feed points. The square loop is used instead of the circular loop in order to miniaturize the antenna size. The input reflection coefficient and gain characteristics of the proposed antenna are analyzed to match with the 75 ohm port impedance for DTV applications. The effects of the gap between the circular sectors and the length of the square loop on the input reflection coefficient and gain characteristics are examined to obtain the optimal design parameters. The optimized antenna is fabricated on an FR4 substrate, and the experiment results show that it operates in the frequency band of 470-1,300 MHz for a VSWR < 2, which assures the operation in the DTV band.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.63-64
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• 2013

In this paper, a design method for a dual dipole antenna for an operation in the frequency band of 470-806 MHz for indoor digital TV (DTV) is studied. The proposed antenna is composed of two planar dipoles connected by parallel strip line, and the antenna is fed by a microstrip line. By employing different lengths of dipoles, a broadband characteristics is obtained, and the antenna is size-reduced by bending both ends of the longer dipole. The effects of each parameters on the antenna performance are examined by simulation, and the parameters are optimized for the DTV use. A prototype antenna with optimized parameters for the indoor DTV use is fabricated on an FR4 substrate and tested experimentally. The experimental results show that the frequency band for a VSWR < 2 ranges 458-864 MHz (61.4%, bandwidth 406 MHz, 1.89:1), and it corresponds fairly well with the simulated band 448-868 MHz (63.8%, bandwidth 420 MHz, 1.94:1).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.71-72
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• 2013

In this paper, a design method for a compact slot antenna for 5.8 GHz RFID band (5.725-5.875 GHz) is studied. The proposed slot antenna is size-reduced by bending both ends of the straight slot in "${\Gamma}$"-shape, and a rectangular feed patch is located inside the slot. The effects of slot length, location of feed patch, and width and length of feed patch on the antenna performance are examined. A prototype antenna with optimized parameters for 5.8 GHz band is fabricated on an FR4 substrate and tested experimentally. The experimental results show that the frequency band for a VSWR < 3 ranges 5.72-6.13 GHz (bandwidth 410 MHz), and it corresponds fairly well with the simulated band 5.64-5.97 GHz (bandwidth 330 MHz). The fabricated antenna shows good radiation performance such as maximum power density in both directions normal to the slot plane, and low cross-polarization level of < -20 dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.502-509
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• 2018

Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of $w{\ddot{u}}rtzite$ ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, $30^{\circ}$-rotated position, and ${\pm}8.5^{\circ}$-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.