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http://dx.doi.org/10.4313/JKEM.2018.31.7.502

Epitaxial Growth of ZnO Nanowires on Sapphire (001) Substrates Using a Hydrothermal Process  

Ham, Daseul (Department of Materials Science and Engineering, Chosun University)
Jeong, Byeong Eon (Department of Materials Science and Engineering, Chosun University)
Yang, Myeong Hun (Department of Materials Science and Engineering, Chosun University)
Lee, Jong Kwan (Department of Materials Science and Engineering, Chosun University)
Choi, Young Bin (Department of Materials Science and Engineering, Chosun University)
Kang, Hyon Chol (Department of Materials Science and Engineering, Chosun University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.7, 2018 , pp. 502-509 More about this Journal
Abstract
Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of $w{\ddot{u}}rtzite$ ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, $30^{\circ}$-rotated position, and ${\pm}8.5^{\circ}$-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.
Keywords
ZnO; Nanowires; Epitaxy; Domain matching model; Hydrothermal process;
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1 D. C. Look, B. Claflin, Y. I. Alivov, and S. J. Park, Phys. Status Solidi A, 201, 2203 (2004). [DOI: https://doi.org/10.1002/pssa.200404803]   DOI
2 U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, J. Appl. Phys., 98, 041301 (2005). [DOI: https://doi.org/10.1063/1.1992666]   DOI
3 B. Hussain, A. Ebong, and I. Ferguson, Sol. Energy Mater. Sol. Cells, 139, 95 (2015). [DOI: https://doi.org/10.1016/j.solmat.2015.03.017]   DOI
4 Y. J. Lee, D. S. Ruby, D. W. Peters, B. B. McKenzie, and J.W.P. Hsu, Nano Lett., 8, 1501 (2008). [DOI: https://doi.org/10.1021/nl080659j]   DOI
5 R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett., 82, 733 (2003). [DOI: https://doi.org/10.1063/1.1542677]   DOI
6 P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes Jr., Appl. Phys. Lett., 82, 1117 (2003). [DOI: https://doi.org/10.1063/1.1553997]   DOI
7 R. Navamathavan, C. K. Choi, E. J. Yang, J. H. Lim, D. K. Hwang, and S. J. Park, Solid-State Electron., 52, 813 (2008). [DOI: https://doi.org/10.1016/j.sse.2007.11.010]   DOI
8 S. H. Seo and H. C. Kang, Thin Solid Films, 518, 5164 (2010). [DOI: https://doi.org/10.1016/j.tsf.2010.03.032]   DOI
9 A. H. Adl, A. Ma, M. Gupta, M. Benlamri, Y. Y. Tsui, D. W. Barlage, and K. Shankar, ACS Appl. Mater. Interfaces, 4, 1423 (2012). [DOI: https://doi.org/10.1021/am201656h]   DOI
10 J. H. Kim, M. S. Lee, and H. C. Kang, J. Korean Phys. Soc., 66, 229 (2015). [DOI: https://doi.org/10.3938/jkps.66.229]   DOI
11 T. Pauporte, D. Lincot, B. Viana, and F. Pelle, Appl. Phys. Lett., 89, 233112 (2006). [DOI: https://doi.org/10.1063/1.2402223]   DOI
12 M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater., 13, 113 (2001). [DOI: https://doi.org/10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H]   DOI
13 L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Jhonson, Y. Zhang, R. J. Saykally, and P. Yang, Angew. Chem. Int. Ed., 115, 3139 (2003). [DOI: https://doi.org/10.1002/ange.200351461]   DOI
14 Y. Li, G. Duan, G. Liu, and W. Cai, Chem. Soc. Rev., 42, 3614 (2013). [DOI: https://doi.org/10.1039/C3CS35482B]   DOI
15 S. Kim and H. C. Kang, J. Korean Phys. Soc., 69, 778 (2016). [DOI: https://doi.org/10.3938/jkps.69.778]   DOI
16 H. Huang, H. Wang, B. Li, X. Mo, H. Long, Y. Li, H. Zhang, D. L. Carroll, and G. Fang, Nanotechnology, 24, 315203 (2013). [DOI: https://doi.org/10.1088/0957-4484/24/31/315203]   DOI
17 R. M. Tripathi, A. S. Bhadwal, R. K. Gupta, P. Singh, A. Shrivastav, and B. R. Shrivastav, J. Photochem. Photobiol., B, 141, 288 (2014). [DOI: https://doi.org/10.1016/j.jphotobiol.2014.10.001]   DOI
18 N. Wang, Y. Cai, and R. Q. Zhang, Mater. Mater. Sci. Eng., 60, 1 (2008). [DOI: https://doi.org/10.1016/j.mser.2008.01.001]   DOI
19 M. J. Bierman, Y.K.A. Lau, A. V. Kvit, A. L. Schmitt, and S. Jin, Science, 320, 1060 (2008). [DOI: https://doi.org/10.1126/science.1157131]   DOI
20 L. Luo, B. D. Sosnowchik, and L. Lin, Nanotechnology, 21, 495502 (2010). [DOI: https://doi.org/10.1088/0957-4484/21/49/495502]   DOI
21 J. Yeo, S. Hong, G. Kim, H. Lee, Y. D. Suh, I. Park, C. P. Grigoropoulos, and S. H. Ko, ACS Nano, 9, 6059 (2015). [DOI: https://doi.org/10.1021/acsnano.5b01125]   DOI
22 L. V. Podrezova, S. Porro, V. Cauda, M. Fontana, and G. Cicero, Appl. Phys. A, 113, 623 (2013). [DOI: https://doi.org/10.1007/s00339-013-7838-5]   DOI
23 D. Yu, T. Trad, J. T. McLeskey Jr, V. Craciun, and C. R. Taylor, Nanoscale Res. Lett., 5, 1333 (2010). [DOI: https://doi.org/10.1007/s11671-010-9649-3]   DOI
24 H. C. Kang, S. H. Seo, and D. Y. Noh, J. Mater. Res., 16, 1814 (2001). [DOI: https://doi.org/10.1557/JMR.2001.0250]   DOI
25 F. Meng, S. A. Morin, A. Forticaux, and S. Jin, Acc. Chem. Res., 46, 1616 (2013). [DOI: https://doi.org/10.1021/ar400003q]   DOI
26 W. Y. Wu, C. C. Yeh, and J. M. Ting, J. Am. Chem. Soc., 92, 2718 (2009). [DOI: https://doi.org/10.1111/j.1551-2916.2009.03022.x]
27 S. H. Kim, C. S. Lee, J. Kim, J. W. Cho, and Y. K. Kim, AIP Adv., 3, 092132 (2013). [DOI: https://doi.org/10.1063/1.4824311]   DOI
28 S. I. Park, T. S. Cho, S. J. Doh, J. L. Lee, and J. H. Je, Appl. Phys. Lett., 77, 349 (2000). [DOI: https://doi.org/10.1063/1.126972]   DOI
29 A. A. Sokol, S. A. French, S. T. Bromley, C.R.A. Catlow, H.J.J. van Dam, and P. Sherwood, Faraday Discuss., 134, 267 (2007). [DOI: https://doi.org/10.1039/B607406E]   DOI
30 H. G. Chen, C. W. Wang, and Z. F. Tu, Mater. Chem. Phys., 144, 199 (2014). [DOI: https://doi.org/10.1016/j.matchemphys.2013.12.044]   DOI