Browse > Article
http://dx.doi.org/10.4313/JKEM.2003.16.3.195

A Study on the Properties and fabrication to the (Ba,Bi,Sr)TiO3 Ceramics for the Application of High Capacitance  

이상철 (광운대학교 전자재료공학과)
최의선 (광운대학교 전자재료공학과)
배선기 (인천대학교 전기공학과)
이영희 (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.3, 2003 , pp. 195-201 More about this Journal
Abstract
The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.
Keywords
(Ba,Bi,Sr)TiO$_3$[BBST] Thin films; Ar/O$_2$ ratio; Structural properties; Dielectric properties;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 Memory Cell and Technology Issues for 64- and 256-Mbit One-Transistor Cell MOSDRAMs /
[ A. F. Tasch Jr;L. H. Parker ] / Proceedings of the IEEE
2 Fundamental Limitations on DRAM Storage Capacitors /
[ W. P. Noble;D. E. Kotecki ] / IEEE Circuit and Devices Magazine
3 RF Sputtering을 이용한 차세대 유전체 박막용 BaTiO₃세라믹스 박막의 제조 및 전기적 특성에 관한 연구 /
[ 류기원;정장호;이문기;이영희 ] / 전기전자재료학회논문지   과학기술학회마을
4 High Dielectric (Ba,Sr)TiO₃Thin Films for ULSI DRAM Application /
[ Yoichi Miyasaka ] / Extended Abstracts of 1995 International Conference on Solid State Device and Materials
5 /
[ D. A. Glocker:S. I. Shah ] / HANDBOOK OF THIN FILM PROCESS TECHNOLOGY
6 Information Writing Mechanism in Thin Film MFIS Structures Ferroelectrics /
[ L. Baginsky;E. G. Kostov ] / Proc. 4th ISIF
7 Sol-Gel 법으로 제조한 (Ba,Sr)TiO₃박막의 구조 및 유전특성 /
[ 이문기;정장호;이성갑;이영희 ] / 전기전자재료학회논문지   과학기술학회마을
8 Ar/O₂비에 따른 BST 박막의 전기적 특성 /
[ 신승창;이문기;정장호;배선기;이영희 ] / 전기전자재료학회논문지   과학기술학회마을
9 Electrical characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics /
[ M. A. Robert;E. Jones;Peir Chu ] / Proc. 4th ISIF