• Journal of Advanced Marine Engineering and Technology
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• v.20 no.5
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• pp.103-113
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• 1996

The properties of the deposited film depend on the deposition condition and these, in turn depend critically on the morphology and crystal orientation of the films. Therefore, it is important to clarify the nucleation occurrence and growth stage of the morphology and orientation of the film affected by deposition parameters, e.g. the gas pressure and bias voltage etc. In this work, magnesium thin flims were prepared on cold-rolled steel substrates by a thermo-eletron activation ion plating technique. The influence of nitrogen gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. The diffraction peaks of magnesium film became less sharp and broadened with the increase of nitrogen gas pressure. With an increase in nitrogen gas pressure, flim morphology changed from colum nar to granular structure, and surface crystal grain-size decreased. The morphology of films depended not only on gas pressure but also on bias voltage, i.e., the effect of increasing bias voltage was similar to that of decreasing gas pressure. The effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. Magnesium, in general, has not a good corrosion resistance in all environments. However, these magnesium films prepared by changing nitrogen gas pressure showed good corrosion resistance. Among the films, magnesium films which exhibited granular structure had the highest corrosion resistance. The above phenomena can be explained by applying the effects of adsorption, occlusion and ion sputter of nitrogen gas.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.8
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• pp.731-736
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• 2016

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.633-636
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• 2003

In this work, We, for the first time, present the effects of the thermal annealing of the W/SiO$_2$ multi-layer quarter wavelength reflectors on the resonant properties of the ZnO-based SMR devices. In order to improve the resonant properties of the SMR devices, we annealed thermally the reflectors formed on a silicon substrate using a RF magnetron sputtering technique. As a result, the resonant properties of the SMR devices were observed to strongly depend on the annealing conditions applied to the reflectors. The SMR devices with the reflectors annealed at 40$0^{\circ}C$/30min showed excellent resonance properties as compared to those with the reflectors non-annealed (as-deposited). The newly proposed simple thermal annealing process will be very useful to more effectively improve the resonant properties of the future SMR devices with W/SiO$_2$ multi-layer quarter wavelength reflectors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.558-564
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• 2012

We fabricated Ga doped ZnO (GZO) thin films on the glass substrate (Eagle 2000) with various of Ga doping concentration and annealing temperatures using sol-gel method, electrical and optical properties were investigated. When the GZO thin films doped with 1 mol% of Ga and annealed at $600^{\circ}C$, the excellent (002) orientation was observed. In the results of Hall measurement, carrier concentration decreased and resistivity increased due to segregation effect with increasing of the Ga doping concentration. The largest carrier concentration and lowest resistivity were $9.13{\times}10^{18}cm^{-3}$ and $0.87{\Omega}cm$, respectively, in the GZO thin films doped with 1 mol% Ga and annealed at $600^{\circ}C$. All films is higher than 80 % in the visible light region. Energy band gap narrowing due to Burstein-Moss effect was observed with increasing of Ga doping concentration from 1 to 4 mol%.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.3
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• pp.42-50
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• 2020

This study explores the effects of repair width on the deposition characteristics and mechanical properties of stainless steel samples repaired using direct energy deposition (DED). In the DED repair process, defects such as pores and cracks can occur at the interface between the substrate and deposited material. In this study, we changed the width of the pre-machined zone for repair in order to prevent cracks from occurring at the inclined surface. As a result of the experiment, cracks of 10-40 ㎛ in length were formed along the inclined slope regardless of the repair width. Yield and tensile strength decreased slightly as the repair width increased, but the total and uniform elongation increased. This is due to the orientation of the crack. For specimens with a repair width of 20 mm, yield and tensile strength were 883 MPa and 1135 MPa, respectively. Total and uniform elongations were 14.3% and 8.2%, respectively. During observation of the fracture specimens, we noted that the fracture of the specimen with an 8 mm repair width occurred along the slope, whereas specimens with 14 mm and 20 mm repair depths fractured at the middle of the repaired region. In conclusion, we found that tensile properties were dependent upon the repair width and the inclination of the crack occurred at the interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.1-232.1
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• 2014

The green displays are the human friendly displays, the nature friendly displays, and the economical displays. Electrochromic displays are low cost and environmental devices because they do have more choice of colours and use much less power. The elements of the electrochromic devices consist of at least two conductors, an electrochromic material and an electrolyte. The optical properties were obtained using the optical contrast between the transparency of the substrate and the coloured state of the electrochromic materials. These devices can be fully flexible and printable. Due to the characteristics of the high coloration efficiency and memory effects, the electrochromic devices have been used in various applications such as information displays, smart windows, light shutters and electronic papers. Among these technical fields switchable mirrors have been received much attention in the applicative point of view of various electronic devices production. We have developed a novel silver (Ag) deposition-based electrochromic device for the reversible electrodeposition (RED) system. The electrochromic device can switch between transparent states and mirror states in response to a change in the applied voltage. The dynamic range of transmittance percent (%) for the fabricated device is about 90% at 550 nm wavelength. Also, we successfully fabricated the large area RED display system using the parted electrochromic cells of the honey comb structure.

• The Korean Journal of Mycology
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• v.14 no.3
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• pp.209-214
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• 1986

In order to study the trehalase (EC 3. 2. 1. 28) from mushroom, Agaricus bisporus Lange Sing., the crude trehalase preparation was separated by fractionation of mushroom extracts with ammonium sulfate between 0.4 and 1.0 saturation, and its properties were examined. Mushroom trehalase showed optimum pH 6.0, and optimum temperature $40^{\circ}C$. The enzyme was stable at pH range between 5.0 and 7.0, and at temperature below $50^{\circ}C$. The activities of crude trehalase had proportional relations with enzyme concentrations below 490.2 mg % of protein and with substrate concentration below $2.6{\times}10^{-3}M$, showing a Km value of 0.760 mM. The enzyme was inhibited by some metal ions such as $Sn^{2+}$, $Ca^{2+}$, $Hg^{2+}$, $Cd^{2+}$, $Cu^{2+}$, $Mn^{2+}$, $Zn^{2+}$, $Al^{3+}$, and $Fe^{3+}$, while $Ag^{+}$, $Ba^{2+}$, and $Mg^{2+}$ demonstrated remarkable increasing effects on the enzyme activity.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• The Korean Journal of Mycology
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• v.36 no.2
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• pp.178-182
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• 2008

Although the number of patients with Acanthamoeba keratitis has increased dramatically since the widespread use of contact lens, it is still very hard to cure the disease. The proteases from the Acanthamoeba were reported to play important role in the pathogenesis of keratitis. In this study, the inhibitors for extracellular serine proteases of A. castellanii were screened from the extracts of 230 mushroom samples collected from various regions of Korea. The mushrooms were extracted with methanol and water ($65^{\circ}C$). Filtered and concentrated extracts (0.3 mg/ml) were preincubated with proteases before addition of peptide substrate N-succinyl-ala-ala-pro-phe p-anilide. The selected extracts showing strong inhibitory effects were characterized. Although inhibition with single extract was not so high enough, the complete inhibition was achieved with combination of two extracts. The selected extract showed little effect on other serine proteases such as thrombin (human and bovine) and on general protease such as protease K.