• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.29-33
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• 2003

Material and electrical properties of copper-based ohmic contacts on n-type 4H-SiC were investigated for the effects of the post-annealing and the metal covering conditions. The ohmic contacts were prepared by sequential sputtering of Cu and Si layers on SiC substrate. The post-annealing treatment was performed using RTP (rapid thermal process) in vacuum and reduction ambient. The specific contact resistivity ($p_{c}$), sheet resistance ($R_{s}$), contact resistance ($R_{c}$), transfer length ($L_{T}$), were calculated from resistance (RT) versus contact spacing (d) measurements obtained from TLM (transmission line method) structure. The best result of the specific contact resistivity was obtained for the sample annealed in the reduction ambient as $p_{c}= 1.0 \times 10^{-6}\Omega \textrm{cm}^2$. The material properties of the copper contacts were also examined by using XRD. The results showed that copper silicide was formed on SiC as a result of intermixing Cu and Si layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.10-15
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• 2005

Effects of CH₄/H₂ flow rate ratio, chuck bias and microwave power on the structural properties and particle densities of diamond thin films deposited on Ti substrates in microwave plasma CVD were examined. High quality diamond thin films were deposited on Ti substrates in 2∼3 CH₄ Vol.% conditions due to the preferential formation of sp³-bonus ana selective removal of sp²-bonus in the CH₄/H₂ mixtures, and the mechanism for the formation of diamond particles on Ti was analysed. Diamond particle density increased with increasing negative chuck bias to Ti substrate due to bias-enhanced nucleation of diamond and the threshold voltage was found at ∼-50 V. With increasing microwave power the evolution from micro-crystalline graphite layer to diamond layer was observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.12-16
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• 2020

Indium tin oxide (ITO) films were prepared onto transparent polyimide (PI) substrates by RF magnetron sputtering at room temperature. The deposited ITO films were heat-treated at various temperatures (50, 100, 150, and 200℃). The effect of post heat-treatment temperature on structural, electrical and optical properties of ITO films were investigated. It was found that the as-deposited ITO films were amorphous and the degree of crystallinity and the grain size increased with an increasing heat-treatment temperature, which led to the increase in carrier concentration and mobility. The electrical resistivity of as-deposited ITO films was 2.73 × 10^-3 Ω·cm. With the heat-treatment temperature increasing from 50 to 200℃, the electrical resistivity decreased from 2.93 × 10^-3 to 1.21 × 10^-4 Ω·cm. The average transmittance (400~800 nm) of the ITO deposited PI substrates was decreasing with post heat-treatment temperature and was above 81 % for the temperatures 50~150℃ and decreased considerably to 78 % at 200℃.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.6
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• pp.1057-1062
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• 2016

In this paper, a design method for a compact log-perio dic half-bow-tie dipole array antenna for an operation in a UWB band(3.1-10.6 GHz) is studied. The proposed antenna is miniaturized by using half-bow-tie shaped dipole elements instead of strip-type dipole elements, which are commonly used in a general log-periodic dipole array(LPDA) antenna, and by reducing the element spacing. The effects of the flare angle of the half-bow-tie elements and the spacing factor on input reflection coefficient and realized gain characteristics of the proposed log-periodic antenna are analyzed. The optimized antenna is fabricated on an FR4 substrate, and the experiment results show that the antenna has a frequency band of 2.95-11.31 GHz for a VSWR < 2, which assures the operation in the UWB band. In addition, the length and width of the proposed antenna are reduced to 32.1 % and 18.3 %, respectively, compared to the LPDA antenna.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.22 no.6
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• pp.15-25
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• 2019

Contamination of soil by deicing salt is among the important environment problems due to their toxicity and negative impact to human health and the environment. One of the effective methods for cleaning the soil from deicing salts is desalination using soil amendment-phytoremediation continuum treatment. The purpose of this study was to determine how much of the pH, EC control and Ca²⁺, Na⁺, Mg²⁺, and K⁺ taken up soil amendments and Miscanthus sinensis, and to evaluate the effect of salt reduction and growth improvement as affected by soil amendment in high concentration of calcium chloride (CaCl₂) deicing salts. Results indicated that the addition of soil amendments was decrease the EC and pH, also significantly reduce the leaching of Ca²⁺, Na⁺, Mg²⁺, K⁺, a chloride ions related deicing salts, compared to the control for CaCl₂ 10 g/L treatment. It also resulted in an enhanced plant growth and higher plant height, leaf length, leaf width, number of leaves, fresh weight and dry weight in Hydroball treatment + Miscanthus sinensis planting continuum treatment compared to the treatment that planted Miscanthus sinensis only. Therefore, we concluded that soil amendments might be attributed to an accumulation of deicing slats in the roadside soil, resulting in the improvement of Miscanthus sinensis growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.1-237.1
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• 2016

Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• Applied Chemistry for Engineering
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• v.26 no.4
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• pp.458-462
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• 2015

It is essential to employ a binder to prepare transparent films from conductive polymer such as poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT/PSS). In this paper, poly(vinyl alcohol) (PVA), poly(vinyl pyrrolidone) (PVP), and PSS were selected as a binder, and their effects were investigated. The formation of the film was found to be primarily dependent on the surface tension of coating solution including PEDOT/PSS and a binder. When PSS was used as a binder, the film was not formed. In case of using PVP, it was easily peeled off from the substrate. However, when using the PVA or the mixtures of PVA and PSS or PVA and PVP as a binder, films with good transparency and uniform surface resistances were produced. Based on adhesion and long-term stability tests, we concluded that the mixture of PVA and PSS is the best binder for preparing antistatic films of PEDOT/PSS.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.