• 한국전자파학회논문지
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• 제16권10호
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• pp.1050-1058
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• 2005

본 논문에서는 40 GHz 대역에서 동작하는 IEEE 802.16 고정 무선 통신 액세스를 위한 소형 저가격 및 광대역의 수신 모듈을 설계하고 구현하는 방법을 제안한다. 제안된 수신 모듈은 우수한 성능을 달성하기 위하여 캐비티 공정을 가지는 다층 LTCC 기술을 사용한다. 수신기는 저잡음 증폭기, 서브-하모닉 믹서, 내장된 이미지 제거필터와 IF 증폭기로 구성된다. 전송 손실과 모듈의 크기를 줄이기 위하여, 각 소자를 연결하기 위한 CB-CPW, 스트립 선로, 본드 와이어 및 천이(transition)들이 사용된다. LTCC는 유전율 7.1인 Dupont사의 DP-943을 사용하고 층수는 6층이며, 각 층의 높이가 100 um이다. 구현된 모듈의 크기는 $20{\times}7.5{\times}1.5\;mm^3$이며, 전체 잡음 지수는 4.8 dB 이하, 하향 변환 이득이 19.83 dB, 입력 P1 dB가 -22.8 dBm이고 이미지 제거값이 36.6 dBc 이상이다. 그리고 $560\~590\;MHz$ 대역의 디지털 TV 신호를 40 GHz 대역으로 상향 변환하여 전송시킨 후, 수신 모듈을 이용하여 시연하였다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• 전자공학회논문지D
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• 제36D권3호
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• pp.41-47
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• 1999

SiN로부터 GaAs로 확산된 Si을 이용하여 소스와 드레인 영역에 고농도 Si 확산층을 갖는 GaAs MESFET를 제작하였다. 제작된 MESFET의 소스와 드레인 영역은 950°C, 30초의 열처리에 의해 Si 확산층이 표면에서부터 350Å두께로 형성되어 확산층이 없을 때 1000Ω/sq.정도였던 면저항이 400Ω/sq.로 내외로 감소하였다. 고농도로 확산된 Si은 AuGe/Ni/Au와 GaAs 기판 사이의 저항성 접촉 특성을 2.5×10\sub -6\Ω-cm\sup 2\로부터 1.5×10\sup -6\Ω-cm\sup 2\로 개선시켰다. 제작된 lum게이트 길이의 확산층을 갖는 MESFET는 최대 트랜스컨덕턴스가 260mS/mm 이었으며, 이득과 최소잡음지수는 12GHz에서 각각 8.5dB와 3.57dB를 나타내 같이 제작된 표면 확산 층이 없는 MESFET에 비해 1.3dB와 0.4dB가 향상되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.235.1-235.1
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• 2015

Artificially-engineered materials, whose electromagnetic properties are not available in nature, such as negative reflective index, are called metamaterials (MMs). Although many scientists have investigated MMs for negative-reflective-index properties at the beginning, their interests have been extended to many other fields comprising perfect lenses. Among various kinds of MMs, metamaterial absorbers (MM-As) mimic the blackbody through minimizing transmission and reflection. In order to maximize absorption, the real and the imaginary parts of the permittivity and permeability of MM-As should be adjusted to possess the same impedance as that of free space. We propose a dual-wide-band and polarization-independent MM-A. It is basically a triple-layer structure made of metal/dielectric multilayered truncated cones. The multilayered truncated cones are periodically arranged and play a role of meta-atoms. We realize not only a wide-band absorption, which utilizes the fundamental magnetic resonances, but also another wide-band absorption in the high-frequency range based on the third-harmonic resonances, in both simulation and experiment. In simulation, the absorption bands with absorption higher than 90% are 3.93 - 6.05 GHz and 11.64 - 14.55 GHz, while the experimental absorption bands are in 3.88 - 6.08 GHz and 9.95 - 13.84 GHz. The physical origins of these absorption bands are elucidated. Additionally, it is also polarization-independent because of its circularly symmetric structures. Our design is scalable to smaller size for the infrared and the visible ranges.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.435-436
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• 2008

This paper presents a dual band frequency synthesizer for GSM and Wideband CDMA which is designed in a standard 0.13um CMOS 1P6M process. The shared components include phase frequency detector (PFD), charge pump (CP), loop filter, integer frequency divider(128/129 DMP, 4bit PC, 3bit SC) and Low noise Ring-VCO. A high-speed low power dual modulus prescaler is proposed to operate up to 2.1GHz at 3.3V supply voltage with 2mW power consumption by simulation. The simulated phase noise of VCO is -101dBc/Hz at 200kHz offset frequency from 1.9GHz.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권6호
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• pp.272-275
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• 2004

A balanced single side-band (SSB) mixer employing a sub-harmonic configuration is designed for up and down conversions in K-band. The designed mixer uses anti-parallel diode (APD) pairs to effectively eliminate even harmonics of the local oscillator (LO) spurious signal. To reduce the odd harmonics of LO at the RF port, we employ a balanced configuration for LO. The fabricated chip shows 12$\pm$2dB of conversion loss and image-rejection ratio of about 20dB for down conversion at RF frequencies of 24-27.5GHz. As an up-conversion mode, the designed chip shows 12dB of conversion loss and image-rejection ratio of 20 ～ 25 dB at RF frequencies of 25 to 27GHz. The odd harmonics of the LO are measured below -37dBc.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.423-429
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• 2013

A 6-Gb/s differential voltage mode driver is presented whose output impedance and pre-emphasis level can be controlled independently. The voltage mode driver consists of five binary-weighted slices each of which has four sub-drivers. The output impedance is controlled by the number of enabled slices while the pre-emphasis level is determined by how many sub-drivers in the enabled slices are driven by post-cursor input. A prototype transmitter with a voltage-mode driver implemented in a 65-nm CMOS logic process consumes 34.8-mW from a 1.2-V power supply and its pre-emphasized output signal shows 165-mVpp,diff and 0.56-UI eye opening at the end of a cable with 10-dB loss at 3-GHz.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.212-215
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• 2018

The phase evolution, microstructure, and microwave dielectric properties of $Ba(Mg_{0.5-2x}Y_{2x}W_{0.5-x}Ti_x)O_3$ (x = 0.005~0.05) ceramics sintered at $1,700^{\circ}C$ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from $-19.6ppm/^{\circ}C$ to $-5.9ppm/^{\circ}C$ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of $Ba(Mg_{0.40}Y_{0.10}W_{0.45}Ti_{0.05})O_3$ were 21.7, 132,685 GHz, and $-5.9ppm/^{\circ}C$, respectively.

• 한국전자파학회지:전자파기술
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• 제19권6호
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• pp.30-39
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• 2008

RFID/USN 서비스가 활성화되기 위해서는 그 근간이 되는 주파수 할당 및 기술 기준 제정이 선행되어야 한다. 하지만 현재의 RFID/USN 기술 기준은 주파수 간섭 문제를 해결하기 위한 RFID Gen. 2 규격의 도입 및 Sub-GHz 대역의 USN 기술 발전 추이를 반영하고 있지 못하고 있다. 이에 UHF 대역 주파수 재배치 계획과 맞물려 현행 기술기준을 개정하려고 하는 움직임이 방송통신위원회를 중심으로 이루어지고 있다. 본 고에서는 이러한 RFID/USN주파수 할당 및 기술 기준 개정 현황을 소개하고, 이를 주파수 간섭 측면에서 분석하고자 한다.

• 한국세라믹학회지
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• 제40권4호
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• pp.323-327
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• 2003

Microwave dielectric properties of (P $b_{0.4}$C $a_{0.6}$)[($Fe_{\frac{1}{2}}$N $b_{\frac{1}{2}}$)$_{1-x}$ (M $g_{1}$ 3/N $b_{2}$ 3/)x] $O_3$ (PCFMN) ceramics were investigated as a function of (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content (0.1$\leq$x$\leq$0.8). A single perovskite phase with the cubic structure was obtained through the given composition range. The unit cell volume was increased with (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$, due to the larger average ionic size of (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ than that of ($Fe_{\frac{1}{2}}$N $b_{\frac{1}{2}}$)$^{4+}$ for B-site ion. Dielectric constant (K) and Temperature Coefficient of Resonant Frequency(TCF) of PCFMN ceramics were dependent on (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content due to the decrease of ionic polarizability and B-site bond valence, respectively. Qf value was decreased with (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content due to the decrease of grain size. Typically, K of 73.56, Qf of 5,074 GHz and TCF of -6.45 ppm/$^{\circ}C$ were obtained for the specimens with x=0.4 sintered at 125$0^{\circ}C$ for 3 h.125$0^{\circ}C$ for 3 h.